Abstract: Provided are an F-P sensor probe, an absolute distance measurement device, and an absolute distance measurement method, which relate to the field of non-contact absolute distance measurement technologies. This structure includes a first N+1-core multimode optical fiber probe (9), an optical fiber sleeve (10), an imaging lens group (11), and a reference lens (12), wherein: the first N+1-core multimode optical fiber probe (9), the imaging lens group (11), and the reference lens (12) are sequentially fixed inside the optical fiber sleeve (10) along a direction of the F-P sensor probe toward a sample (8); and the first N+1-core multimode optical fiber probe (9) includes N first multimode optical fibers (16) and one second multimode optical fiber (17), where N?2, and the N first multimode optical fibers (16) are arranged around the second multimode optical fiber (17).

Abstract: Provided is an near-field lithography immersion system, including: an immersion unit including: a liquid flow channel and a gas flow channel configured to apply gas to confine an immersion liquid provided by the liquid flow channel into an exposure field; at least two interface modules, the interface module includes a gas connector, a liquid connector and a brake connector, the gas connector and the liquid connector are correspondingly connected to the gas flow channel and the liquid flow channel, respectively, the brake connector is configured to control an assembly and a disassembly of the immersion unit, and the interface module is detachably connected to the immersion unit; and a mask loading module including a mask base plate and a mask, the immersion liquid is guided to an edge of the mask from below the mask base plate to form an immersion field between the mask and a substrate.

Abstract: Provided is an near-field lithography immersion system, including: an immersion unit including: a liquid flow channel and a gas flow channel configured to apply gas to confine an immersion liquid provided by the liquid flow channel into an exposure field; at least two interface modules, the interface module includes a gas connector, a liquid connector and a brake connector, the gas connector and the liquid connector are correspondingly connected to the gas flow channel and the liquid flow channel, respectively, the brake connector is configured to control an assembly and a disassembly of the immersion unit, and the interface module is detachably connected to the immersion unit; and a mask loading module including a mask base plate and a mask, the immersion liquid is guided to an edge of the mask from below the mask base plate to form an immersion field between the mask and a substrate.

Abstract: Provided are an F-P sensor probe, an absolute distance measurement device, and an absolute distance measurement method, which relate to the field of non-contact absolute distance measurement technologies. This structure includes a first N+1-core multimode optical fiber probe (9), an optical fiber sleeve (10), an imaging lens group (11), and a reference lens (12), wherein: the first N+1-core multimode optical fiber probe (9), the imaging lens group (11), and the reference lens (12) are sequentially fixed inside the optical fiber sleeve (10) along a direction of the F-P sensor probe toward a sample (8); and the first N+1-core multimode optical fiber probe (9) includes N first multimode optical fibers (16) and one second multimode optical fiber (17), where N?2, and the N first multimode optical fibers (16) are arranged around the second multimode optical fiber (17).

Abstract: Provided are apparatuses and methods for super resolution imaging photolithography. An exemplary apparatus may include an illumination light generation device configured to generate illumination light for imaging a pattern included in a mask through the mask. The illumination light may include a high-frequency spatial spectrum such that a high-frequency evanescent wave component of spatial spectrum information for the light is converted to a low-frequency evanescent wave component after being transmitted through the mask pattern. For example, the illumination light generation device may be configured to form the illumination in accordance with a high numerical aperture (NA) illumination mode and/or a surface plasmon (SP) wave illumination mode.

Abstract: Provided are apparatuses and methods for super resolution imaging photolithography. An exemplary apparatus may include an illumination light generation device configured to generate illumination light for imaging a pattern included in a mask through the mask. The illumination light may include a high-frequency spatial spectrum such that a high-frequency evanescent wave component of spatial spectrum information for the light is converted to a low-frequency evanescent wave component after being transmitted through the mask pattern. For example, the illumination light generation device may be configured to form the illumination in accordance with a high numerical aperture (NA) illumination mode and/or a surface plasmon (SP) wave illumination mode.