Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.

Abstract: The present invention relates to a protective film for electronic device. The protective film comprises a protective-film body and a first microstructure layer. The protective-film body has a first surface and a second surface. The first microstructure layer is disposed on the first surface of the protective-film body. The second surface of the protective-film body covers the surface of an electronic device. The hardness of the protective film is between 1 H and 12 H. Thanks to it high surface hardness, the protective film according to the present invention has superior wear and scrape resistance. Thereby, the life time of the protective film is extended and hence ensuring protection of the surface of the electronic device.