Abstract: 3D memory devices with an etch-resistant layer and methods for forming the same are disclosed. A memory device includes a substrate and a memory stack disposed on the substrate. The memory stack includes a plurality of interleaved conductor layers and dielectric layers. The memory device also includes a plurality of memory strings each extending vertically through the memory stack and including a semiconductor plug at a bottom portion of the memory string. The semiconductor plug is in contact with the substrate and includes a top portion doped with an etch-resistant material.

Abstract: 3D memory devices with an etch-resistant layer and methods for forming the same are disclosed. A memory device includes a substrate and a memory stack disposed on the substrate. The memory stack includes a plurality of interleaved conductor layers and dielectric layers. The memory device also includes a plurality of memory strings each extending vertically through the memory stack and including a semiconductor plug at a bottom portion of the memory string. The semiconductor plug is in contact with the substrate and includes a top portion doped with an etch-resistant material.