Patents by Inventor Chengzhi XIE

Chengzhi XIE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230092146
    Abstract: Example radar systems, optical detectors, vehicles, and optical detection methods are provided. An example radar system includes a laser device and an optical detector. The optical detector can include a first polarization scanner and a photosensitive device. The laser device can be configured to emit detection laser. The first polarization scanner can be configured to refract an echo signal of the detection laser, where a refractive index of the first polarization scanner is variable. The photosensitive device can be configured to sense the echo signal refracted by the first polarization scanner.
    Type: Application
    Filed: November 28, 2022
    Publication date: March 23, 2023
    Inventors: Chengzhi XIE, Lei YAN, Ke HUANG, Wen ZHAO, Wei XIONG
  • Patent number: 11056531
    Abstract: A method of fabricating a field-effect transistor in which a native oxide layer is removed prior to etching a gate recess. The cleaning step ensures that the etch of the gate recess starts at the same time across an entire sample, such that a uniform gate recess depth and profile can be achieved across an array of field-effect transistors. This results in a highly uniform switch-off voltage for the field-effect transistors in the array.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: July 6, 2021
    Assignee: The University Court of the University of Glasgow
    Inventors: David Robert Sime Cumming, Chengzhi Xie, Vincenzo Pusino
  • Publication number: 20200168659
    Abstract: A method of fabricating a field-effect transistor in which a native oxide layer is removed prior to etching a gate recess. The cleaning step ensures that the etch of the gate recess starts at the same time across an entire sample, such that a uniform gate recess depth and profile can be achieved across an array of field-effect transistors. This results in a highly uniform switch-off voltage for the field-effect transistors in the array.
    Type: Application
    Filed: June 1, 2018
    Publication date: May 28, 2020
    Applicant: The University Court of the University of Glasgow
    Inventors: David Robert Sime CUMMING, Chengzhi XIE, Vincenzo PUSINO