Abstract: A semiconductor processing system configured for performing concurrent epitaxial deposition of material layers is disclosed. The system includes a process module with a first and second chamber body, each having upper and lower walls extending between injection and exhaust chamber flanges. The gas delivery system comprises sources of gas and additional gas, with gas conduits fluidly coupled to the chamber bodies. A gas manifold with input and output conduits directs the additional gas to the chamber bodies, controlled by flow controllers. The chamber bodies are laterally separated and positioned adjacent to each other on either side of a central plane, facilitating efficient concurrent deposition processes.

Abstract: A method of forming a semiconductor structure is provided. The method includes seating a substrate in a first chamber of a semiconductor processing system, depositing a first layer pair overlaying the substrate while the substrate is seated in the first chamber of the semiconductor processing system, and removing the substrate from the first chamber. The substrate is transferred to a second chamber coupled to the first chamber of the semiconductor processing system, seated in the second chamber of the semiconductor processing system, and a second layer pair deposited on the substrate while the substrate is seated in the second chamber such that the second layer pair overlays the first layer pair. Semiconductor structures and semiconductor processing systems are also described.