Abstract: A qubit assembly and a preparation method thereof, a quantum chip, and a chip preparation system are provided, which relate to the field of micro-nanofabrication technologies. The preparation method includes: preparing an underlying film of a qubit assembly on a substrate; preparing an underlying circuit based on the underlying film, a surface of the underlying circuit having a nitride passivation layer; and preparing, on the substrate, a qubit connected to the underlying circuit, to obtain the qubit assembly.

Abstract: A quantum task execution method is performed by a computer device. The method includes: obtaining a logical quantum circuit configured to execute a quantum task; generating a virtual quantum circuit of the quantum task according to topology information represented by a virtual quantum chip and the logical quantum circuit, the virtual quantum chip corresponding to a partial structure in a physical quantum chip, the topology information being configured for representing a topology relationship between virtual qubits included in the virtual quantum chip; generating a physical quantum circuit in the physical quantum chip for the quantum task according to the virtual quantum circuit and a bit mapping relationship between the virtual quantum chip and the physical quantum chip; and executing the physical quantum circuit through the partial structure in the physical quantum chip, to obtain an execution result of the quantum task.

Abstract: A production line device prepares a superconducting circuit layer on a substrate. The device prepares an under bump metallization (UBM) layer on an upper surface of the superconducting circuit layer. A superconducting connection is formed between the UBM layer and the superconducting circuit layer. The production device prepares a welding spot on an upper surface of the UBM layer to obtain a qubit assembly configured for a flip-chip superconducting quantum chip. A superconducting electrical connection is formed between the welding spot and the UBM layer.

Abstract: A production line device prepares a superconducting circuit layer on a substrate. The device prepares an under bump metallization (UBM) layer on an upper surface of the superconducting circuit layer. A superconducting connection is formed between the UBM layer and the superconducting circuit layer. The production device prepares a welding spot on an upper surface of the UBM layer to obtain a qubit assembly configured for a flip-chip superconducting quantum chip. A superconducting electrical connection is formed between the welding spot and the UBM layer.

Abstract: According to various embodiments, a transistor device may include a substrate. The transistor device may further include a drain terminal and a source terminal formed in the substrate, and a gate terminal formed over the substrate. The transistor device may further include an insulator structure arranged between the drain terminal and the source terminal, and at least partially under the gate terminal. The insulator structure may include an oxide member and a trench isolation region. The oxide member may be at least partially formed over the trench isolation region.

Abstract: According to various embodiments, a transistor device may include a substrate. The transistor device may further include a drain terminal and a source terminal formed in the substrate, and a gate terminal formed over the substrate. The transistor device may further include an insulator structure arranged between the drain terminal and the source terminal, and at least partially under the gate terminal. The insulator structure may include an oxide member and a trench isolation region. The oxide member may be at least partially formed over the trench isolation region.