Abstract: An optical inspection is performed to detect potential defects within integrated circuit devices and a first electron-based inspection of less than all of the potential defects is performed to identify primary actual defects. A process window of manufacturing parameter settings used to manufacture the integrated circuit devices is identified and the integrated circuit devices manufactured using the manufacturing parameter settings inside the process window have less than a threshold number of the primary actual defects. To identify additional actual defects a second electron-based inspection is performed that is limited to selected ones of the potential defects in the integrated circuit devices that were manufactured using the manufacturing parameter settings inside the process window but were uninspected in the first electron-based inspection.

Abstract: An optical inspection is performed to detect potential defects within integrated circuit devices and a first electron-based inspection of less than all of the potential defects is performed to identify primary actual defects. A process window of manufacturing parameter settings used to manufacture the integrated circuit devices is identified and the integrated circuit devices manufactured using the manufacturing parameter settings inside the process window have less than a threshold number of the primary actual defects. To identify additional actual defects a second electron-based inspection is performed that is limited to selected ones of the potential defects in the integrated circuit devices that were manufactured using the manufacturing parameter settings inside the process window but were uninspected in the first electron-based inspection.

Abstract: The embodiments herein relate to defect inspection methods of semiconductor wafers during the manufacturing process. According to an aspect of the present disclosure, a defect inspection system is provided. The defect inspection system includes a first inspection system, pattern simulator software, and a second inspection system. The first inspection system is capable of determining a plurality of defect locations on an article. The pattern simulator software is capable of generating a set of simulated pattern features from the plurality of defect locations. The second inspection system is capable of providing a higher graphical resolution of defects than the first inspection at the defect locations corresponding to the set of simulated pattern features.