Abstract: Techniques for unsupervised anomalous access detection using sentence-based feature embeddings are described. Entity data describing users having access to a particular computing resource is obtained from a computing system and utilized, according to a sentence template, to construct descriptive sentences in a natural language format. The sentences are used to create dense vector embeddings via a sentence transformer machine learning (ML) model. The dense vector embeddings are used as input to an unsupervised anomaly detection ML model to detect anomalous users, which can be presented to an administrator.

Abstract: Embodiments relate to the field of semiconductor manufacturing technology, and more particularly, to a method for fabricating a semiconductor structure, and a semiconductor structure. The method for fabricating a semiconductor structure includes: providing a substrate covered with a conductive layer; removing part of the conductive layer by dry etching to form a first groove, a depth of the first groove being less than a thickness of the conductive layer, and there being polymer residue on a groove wall of the first groove; removing part of the conductive layer corresponding to the groove wall and a groove bottom of the first groove to form conductive lines and a second groove between adjacent two of the conductive lines; and forming a passivation layer filled into the second groove.

Abstract: Embodiments relate to the field of semiconductor manufacturing technology, and more particularly, to a method for fabricating a semiconductor structure, and a semiconductor structure. The method for fabricating a semiconductor structure includes: providing a substrate covered with a conductive layer; removing part of the conductive layer by dry etching to form a first groove, a depth of the first groove being less than a thickness of the conductive layer, and there being polymer residue on a groove wall of the first groove; removing part of the conductive layer corresponding to the groove wall and a groove bottom of the first groove to form conductive lines and a second groove between adjacent two of the conductive lines; and forming a passivation layer filled into the second groove.

Abstract: The present application relates to a method for preparing a trench isolation structure and a method for preparing a semiconductor device. The method for preparing a trench isolation structure comprises opening a trench on a substrate, and filling a first dielectric layer of a preset thickness at the bottom of the trench; forming a compensation film on the sidewalls of the trench above the first dielectric layer; filling a second dielectric layer into the trench to form the trench isolation structure, with the compensation film be completely consumed after filling the second dielectric layer.