Patents by Inventor Chenran LIU

Chenran LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12449577
    Abstract: Described is a broadband near infrared absorber, including a wide-type cross-shaped gold layer, an indium tin oxide (ITO) thin film, a silicon dioxide (SiO2) layer and a hollowed-out cross-shaped gold layer arranged from top to bottom. A length of the cross-shaped gold layer is the same as a length of the hollowed-out cross-shaped gold layer. A width of the cross-shaped gold layer is the same as a width of the hollowed-out cross-shaped gold layer. A thickness of the cross-shaped gold layer is different from a thickness of the hollowed-out cross-shaped gold layer.
    Type: Grant
    Filed: November 28, 2022
    Date of Patent: October 21, 2025
    Assignee: Anhui University
    Inventors: Ming Fang, Chenran Liu, Meijun Kang, Ke Xu, Jian Feng, Zhicheng Xiao, Rongsheng Cheng, Xingchen Liu, Zhixiang Huang
  • Publication number: 20230185995
    Abstract: An electromagnetic field simulation method based on subgridding technique and one-step alternating-direction-implicit-finite-difference time-domain (ADI-FDTD) algorithm is provided herein. The method includes establishing an electromagnetic field simulation model by setting an absorption boundary condition, a periodic boundary condition, a total field boundary condition and a scattering field boundary condition based on the one-step ADI-FDTD algorithm, subgridding technique and FDTD algorithm. The electromagnetic field simulation model is configured to select a detection point and a detection surface, obtain a time-domain waveform diagram of a reflection field of a simulation area, a time-domain waveform diagram of a transmission field of the simulation area and frequency-domain information of the simulation area, and simulate an electromagnetic field, by the electromagnetic field simulation model.
    Type: Application
    Filed: February 9, 2023
    Publication date: June 15, 2023
    Inventors: Ming FANG, Chenran LIU, Jian FENG, Guoda XIE, Ke XU, Xueshi HOU, Mandi RONG, Zhixiang HUANG, Xianliang WU
  • Publication number: 20230106637
    Abstract: Described is a broadband near infrared absorber, including a wide-type cross-shaped gold layer, an indium tin oxide (ITO) thin film, a silicon dioxide (SiO2) layer and a hollowed-out cross-shaped gold layer arranged from top to bottom. A length of the cross-shaped gold layer is the same as a length of the hollowed-out cross-shaped gold layer. A width of the cross-shaped gold layer is the same as a width of the hollowed-out cross-shaped gold layer. A thickness of the cross-shaped gold layer is different from a thickness of the hollowed-out cross-shaped gold layer.
    Type: Application
    Filed: November 28, 2022
    Publication date: April 6, 2023
    Inventors: Ming FANG, Chenran LIU, Meijun KANG, Ke XU, Jian FENG, Zhicheng XIAO, Rongsheng CHENG, Xingchen LIU, Zhixiang HUANG