Patents by Inventor Chenran Ye

Chenran Ye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon-based, broadband, waveguide-integrated electro-optical switch
    Patent number: 9529158
    Abstract: An electro-optical switch or router includes a semiconductor oxide substrate and first, second, and third semiconductor waveguides disposed on the semiconductor oxide substrate. The third waveguide includes a transparent conducting oxide layer, an oxide layer, a metal layer, and first and second electrodes coupled to the third waveguide. The electrodes are configured to bias and unbiased the third waveguide to effect optical switching in the electro-optical switch. The oxide layer is disposed between the transparent conducting oxide layer and the metal layer. The switch may further include a semiconductor layer disposed under the transparent conducting oxide layer between the transparent conducting oxide layer and the semiconductor oxide substrate. The first electrode may be coupled to the transparent conducting oxide layer, and the second electrode may be coupled to the metal layer.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: December 27, 2016
    Assignee: The George Washington University
    Inventors: Volker J. Sorger, Chenran Ye, Ke Liu
  • SILICON-BASED, BROADBAND, WAVEGUIDE-INTEGRATED ELECTRO-OPTICAL SWITCH
    Publication number: 20150234138
    Abstract: An electro-optical switch or router includes a semiconductor oxide substrate and first, second, and third semiconductor waveguides disposed on the semiconductor oxide substrate. The third waveguide includes a transparent conducting oxide layer, an oxide layer, a metal layer, and first and second electrodes coupled to the third waveguide. The electrodes are configured to bias and unbiased the third waveguide to effect optical switching in the electro-optical switch. The oxide layer is disposed between the transparent conducting oxide layer and the metal layer. The switch may further include a semiconductor layer disposed under the transparent conducting oxide layer between the transparent conducting oxide layer and the semiconductor oxide substrate. The first electrode may be coupled to the transparent conducting oxide layer. and the second electrode may be coupled to the metal layer.
    Type: Application
    Filed: October 30, 2014
    Publication date: August 20, 2015
    Applicant: The George Washington University
    Inventors: Volker J. Sorger, Chenran Ye, Ke Liu