Abstract: Wafers of silicon-on-insulator (SOI) produced by the zone melting recrystallization technique are known to exhibit warping and edge defects which prohibit their use in automated silicon wafer processing equipment. These deficiencies arise from excess heat buildup at the periphery of the wafer because the wafer edge acts as a barrier to heat transfer. Dissipation of heat from the edge by varying the heat dissipation efficiency of the environment about the periphery of the wafer allows wafers with substantially fewer defects to be produced.

Abstract: A method is provided for zone-melting-recrystallization (ZMR) to produce high quality substantially subboundary-free silicon-on-insulator (SOI) thin films by controlled radiant heating of the silicon film. Using this technique, a much wider experimental parameter range which improves the uniformity of the crystalline quality over the entire SOI film is possible.

Abstract: A method is provided for zone-melting-recrystallization (ZMR) to produce high quality substantially subboundary-free silicon-on-insulator (SOI) thin films by controlled radiant heating of the silicon film. Using this technique, a much wider experimental parameter range which improves the uniformity of the crystalline quality over the entire SOI film is possible.

Abstract: Wafers of silicon-on-insulator (SOI) produced by the zone melting recrystallization technique are known to exhibit warping and edge defects which prohibit their use in automated silicon wafer processing equipment. These deficiencies arise from excess heat buildup at the periphery of the wafer because the wafer edge acts as a barrier to heat transfer. Dissipation of heat from the edge by varying the heat dissipation efficiency of the environment about the periphery of the wafer allows wafers with substantially fewer defects to be produced.

Abstract: Wetting of encapsulated silicon-on-insulator (SOI) films during a zone-melting recrystallization (ZMR) process is enhanced by a high temperature anneal of the SOI structure in a reactive nitrogen-containing ambient to introduce nitrogen atoms to the polysilicon/silicon dioxide cap interface. The technique is not only more effective in present in cap fracture and enhancing crystal quality but is also susceptible to batch processing with noncritical parameters in a highly efficient, uniform manner. Preferably, the cap is exposed to 100% ammonia at 1100.degree. C. for one to three hours followed by a pure oxygen purge for twenty minutes. The ammonia atmosphere is reintroduced at the same temperature for another one to three hour period before ZMR. The process is believed to result in less than a half monolayer of nitrogen at the interior cap interface thereby significantly lowering the contact angle and improving the wetting character of the SOI structure.

Abstract: Wetting of encapsulated silicon-on-insulator (SOI) films during a zone-melting recrystallization (ZMR) process is enhanced by a high temperature anneal of the SOI structure in a reactive nitrogen-containing ambient to introduce nitrogen atoms to the polysilicon/silicon dioxide cap interface. The technique is not only more effective in preventing cap fracture and enhancing crystal quality but it also susceptible to batch processing with noncritical parameters in a highly efficient, uniform manner. Preferably, the cap is exposed to 100% ammonia at 1100.degree. C. for one to three hours followed by a pure oxygen purge for twenty minutes. The ammonia atmosphere is reintroduced at the same temperature for another one to three hour period before ZMR. The process is believed to result in less than a half monolayer of nitrogen at the interior cap interface thereby significantly lowering the contact angle and improving the wetting character of the SOI structure.