Patents by Inventor Chentsau (Chris) Ying
Chentsau (Chris) Ying has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230389441Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.Type: ApplicationFiled: August 8, 2023Publication date: November 30, 2023Applicant: Applied Materials, Inc.Inventors: Minrui YU, Wenhui WANG, Jaesoo AHN, Jong Mun KIM, Sahil PATEL, Lin XUE, Chando PARK, Mahendra PAKALA, Chentsau Chris YING, Huixiong DAI, Christopher S. NGAI
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Patent number: 11723283Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.Type: GrantFiled: May 11, 2020Date of Patent: August 8, 2023Assignee: Applied Materials, Inc.Inventors: Minrui Yu, Wenhui Wang, Jaesoo Ahn, Jong Mun Kim, Sahil Patel, Lin Xue, Chando Park, Mahendra Pakala, Chentsau Chris Ying, Huixiong Dai, Christopher S. Ngai
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Patent number: 11682556Abstract: A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.Type: GrantFiled: February 15, 2022Date of Patent: June 20, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Jie Zhou, Erica Chen, Qiwei Liang, Chentsau Chris Ying, Srinivas D. Nemani, Ellie Y. Yieh
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Publication number: 20230066497Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.Type: ApplicationFiled: November 1, 2022Publication date: March 2, 2023Applicant: Applied Materials, Inc.Inventors: Mei-Yee Shek, Bhargav S. Citla, Joshua Rubnitz, Jethro Tannos, Chentsau Chris Ying, Srinivas D. Nemani, Ellie Y. Yieh
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Patent number: 11566325Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.Type: GrantFiled: December 14, 2020Date of Patent: January 31, 2023Assignee: Applied Materials, Inc.Inventors: Mei-Yee Shek, Bhargav S. Citla, Joshua Rubnitz, Jethro Tannos, Chentsau Chris Ying, Srinivas D. Nemani, Ellie Y. Yieh
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Patent number: 11384428Abstract: Embodiments of the present disclosure generally relate to a method for forming an opening using a mask. In one embodiment, a method includes forming a mask on a feature layer. The method includes forming a first opening in the mask to expose a portion of the feature layer. The method further includes forming a carbon layer on the mask and the exposed portion of the feature layer. The method also includes removing portions of the carbon layer and a portion of the exposed portion of the feature layer in order to form a second opening in the feature layer.Type: GrantFiled: June 17, 2020Date of Patent: July 12, 2022Assignee: Applied Materials, Inc.Inventors: Mang-Mang Ling, Thomas Kwon, Jong Mun Kim, Chentsau Chris Ying
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Patent number: 11387071Abstract: Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.Type: GrantFiled: January 3, 2020Date of Patent: July 12, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Qiwei Liang, Srinivas D Nemani, Ellie Yieh, Douglas Buchberger, Chentsau Chris Ying
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Publication number: 20220172948Abstract: A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.Type: ApplicationFiled: February 15, 2022Publication date: June 2, 2022Applicant: Applied Materials, Inc.Inventors: Jie Zhou, Erica Chen, Qiwei Liang, Chentsau Chris Ying, Srinivas D. Nemani, Ellie Y. Yieh
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Patent number: 11289331Abstract: A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.Type: GrantFiled: September 27, 2019Date of Patent: March 29, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Jie Zhou, Erica Chen, Qiwei Liang, Chentsau Chris Ying, Srinivas D. Nemani, Ellie Y. Yieh
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Publication number: 20210351342Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.Type: ApplicationFiled: May 11, 2020Publication date: November 11, 2021Inventors: Minrui YUI, Wenhui WANG, Jaesoo AHN, Jong Mun KIM, Sahil PATEL, Lin XUE, Chando PARK, Mahendra PAKALA, Chentsau Chris YING, Huixiong DAI, Christopher S. Ngai
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Patent number: 11145808Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.Type: GrantFiled: November 12, 2019Date of Patent: October 12, 2021Assignee: Applied Materials, Inc.Inventors: Jong Mun Kim, Minrui Yu, Chando Park, Mang-Mang Ling, Jaesoo Ahn, Chentsau Chris Ying, Srinivas D. Nemani, Mahendra Pakala, Ellie Y. Yieh
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Publication number: 20210234091Abstract: A method of etching a layer stack. The method may include providing a substrate in a process chamber, the substrate comprising an array of patterned features, arranged within a layer stack, the layer stack including at least one metal layer, and directing an ion beam to the substrate from an ion source, wherein the ion beam causes a physical sputtering of the at least one metal layer. The method may include directing a neutral reactive gas directly to the substrate, separately from the ion source, wherein the neutral reactive gas reacts with metallic species generated by the physical sputtering of the at least one metal layer.Type: ApplicationFiled: January 24, 2020Publication date: July 29, 2021Applicant: APPLIED Materials, Inc.Inventors: Jong Mun Kim, Mang-Mang Ling, Soham Asrani, Lin Xue, Chentsau Chris Ying, Srinivas D. Nemani, Ellie Y. Yieh
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Publication number: 20210217585Abstract: A method and apparatus for depositing a carbon compound on a substrate includes using an inductively coupled plasma (ICP) chamber with a chamber body, a lid, an interior volume, a pumping apparatus, and a gas delivery system and a pedestal for supporting a substrate disposed within the interior volume of the ICP chamber, the pedestal has an upper portion formed from aluminum nitride with an upper surface that is configured to support and heat a substrate with embedded heating elements and a lower portion with a tube-like structure formed from aluminum nitride that is configured to support the upper portion and house electrodes for supplying power to the embedded heating elements of the upper portion, and the pedestal is configured to heat the substrate during deposition of a carbon compound film.Type: ApplicationFiled: October 26, 2020Publication date: July 15, 2021Inventors: Qiwei LIANG, Srinivas D. NEMANI, Chentsau Chris YING, Ellie Y. YIEH, Erica CHEN, Nithin Thomas ALEX
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Patent number: 11049731Abstract: A method of converting films is disclosed. A method of modifying films is also disclosed. Some methods advantageously convert films from a first elemental composition to a second elemental composition. Some methods advantageously modify film properties without modifying film composition.Type: GrantFiled: September 27, 2019Date of Patent: June 29, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Erica Chen, Chentsau Chris Ying, Bhargav S. Citla, Jethro Tannos, Matthew August Mattson
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Publication number: 20210189555Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.Type: ApplicationFiled: December 14, 2020Publication date: June 24, 2021Applicant: Applied Materials, Inc.Inventors: Mei-Yee Shek, Bhargav S. Citla, Joshua Rubnitz, Jethro Tannos, Chentsau Chris Ying, Srinivas D. Nemani, Ellie Y. Yieh
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Publication number: 20210143323Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.Type: ApplicationFiled: November 12, 2019Publication date: May 13, 2021Inventors: Jong Mun KIM, Minrui YU, Chando PARK, Mang-Mang LING, Jaesoo AHN, Chentsau Chris YING, Srinivas D. NEMANI, Mahendra PAKALA, Ellie Y. YIEH
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Publication number: 20210104374Abstract: Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.Type: ApplicationFiled: January 3, 2020Publication date: April 8, 2021Inventors: Qiwei Liang, Srinivas D. Nemani, Ellie Yieh, Douglas Buchberger, Chentsau Chris Ying
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Publication number: 20210066064Abstract: Methods and apparatus for cleaning a contaminated metal surface on a substrate, including: exposing a substrate including a dielectric surface and a metal surface including metal nitride residues and metal carbide residues to a process gas including an oxidizing agent to form a substrate including a dielectric surface and a metal surface including metal oxides residues; and exposing a substrate including a dielectric surface and a metal surface including metal oxides residues to a process gas including a reducing agent to form a substrate including a dielectric surface and a substantially pure metal surface.Type: ApplicationFiled: August 27, 2020Publication date: March 4, 2021Inventors: He REN, Shi YOU, Hao JIANG, Raymond HUNG, Mehul NAIK, Chentsau Chris YING, Mang-Mang LING, Lin DONG
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Publication number: 20210017641Abstract: Embodiments of the present disclosure generally relate to a method for forming an opening using a mask. In one embodiment, a method includes forming a mask on a feature layer. The method includes forming a first opening in the mask to expose a portion of the feature layer. The method further includes forming a carbon layer on the mask and the exposed portion of the feature layer. The method also includes removing portions of the carbon layer and a portion of the exposed portion of the feature layer in order to form a second opening in the feature layer.Type: ApplicationFiled: June 17, 2020Publication date: January 21, 2021Inventors: Mang-Mang LING, Thomas KWON, Jong Mun KIM, Chentsau Chris YING
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Patent number: 10692734Abstract: Methods and apparatus for processing a substrate and etching a nickel silicide layer are provided herein. In some embodiments, a method of etching a nickel silicide film in a semiconductor device include: contacting a nickel silicide film disposed on a substrate in a process chamber with an etching gas sufficient to form one or more soluble or volatile products in order to reduce or eliminate re-deposition of products formed from the nickel silicide film upon the nickel silicide film.Type: GrantFiled: October 25, 2018Date of Patent: June 23, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Jong Mun Kim, Chentsau Chris Ying, He Ren, Srinivas D. Nemani, Ellie Yieh