Abstract: A manufacturing method of an optical device includes: providing a lower transparent substrate; wherein the lower transparent substrate includes an upper surface; providing a quantum dot film element and a glue-material enclosure wall disposed on the upper surface; wherein the glue-material enclosure wall surrounds the quantum dot film element; providing an upper transparent substrate covering the quantum dot film element and the glue-material enclosure wall, such that the quantum dot film element and the glue-material enclosure wall are sandwiched between the lower transparent substrate and the upper transparent substrate; and cutting the lower transparent substrate and the upper transparent substrate to form a lower protective film and an upper protective film corresponding to the quantum dot film element, so as to obtain the optical device including the lower protective film, the upper protective film, the quantum dot film element, and the glue-material enclosure wall.

Abstract: An optical part includes a quantum dot film layer, a lower transparent film layer, and an outer protective film. The quantum dot film layer includes an upper surface, a lower surface, and a lateral surface. The lateral surface connects the upper surface with the lower surface, and the quantum dot film layer is a film containing light emitting semiconductor nanoparticles. The lower transparent film layer is disposed on the lower surface of the quantum dot film layer. The outer protective film directly or indirectly covers the upper surface of the quantum dot film layer, and extends to cover the lateral surface of the quantum dot film layer.

Abstract: Disclosed are a light-emitting device with quantum dots and a manufacturing method thereof. The light-emitting device includes a light-emitting diode chip, a transparent barrier layer, a quantum dot film, and a transparent protective layer. The transparent barrier layer is disposed on the light-emitting diode chip. The quantum dot film is disposed on the transparent barrier layer, such that the light-emitting diode chip is separated from the quantum dot film by the transparent barrier layer. The transparent protective layer is disposed on the quantum dot film, such that the quantum dot film is encapsulated between the transparent barrier layer and the transparent protective layer.

Abstract: A negative electrode material for a lithium ion battery comprises a carbon material, a silicon nanomaterial, and a first solvent. The carbon material comprises carbon nanotubes. The carbon material and the silicon nanomaterial are uniformly mixed in the first solvent. The weight percentage of the silicon nanomaterial is between 1% and 30%, and the amount of the carbon material is 1% to 30% of the amount of the silicon nanomaterial. A negative electrode composite slurry for a lithium ion battery comprises the negative electrode material and a graphite mixture material. The graphite mixture material comprises graphite and a second solvent. The graphite is uniformly mixed in the second solvent, and the weight percentage of the graphite is between 20% and 40%.

Abstract: A conductive slurry for plating comprises a carbon material, a dispersant, a binder, and a solvent. The carbon material, the dispersant and the binder are uniformly mixed in the solvent. The weight percentage of the carbon material is between 0.1% and 1%. The carbon material comprises a carbon nanotube, graphene, or a combination thereof. A plating method for a circuit board, which utilizes the conductive slurry, is also disclosed. The circuit board comprises at least a through hole. The plating method comprises a coating step, a first cleaning step, a first drying step, a first micro-etching step, a second cleaning step, an anti-oxidation step, a third cleaning step, a plating step, and a second drying step.

Abstract: A negative electrode material for a lithium ion battery comprises a carbon material, a silicon nanomaterial, and a first solvent. The carbon material comprises carbon nanotubes. The carbon material and the silicon nanomaterial are uniformly mixed in the first solvent. The weight percentage of the silicon nanomaterial is between 1% and 30%, and the amount of the carbon material is 1% to 30% of the amount of the silicon nanomaterial. A negative electrode composite slurry for a lithium ion battery comprises the negative electrode material and a graphite mixture material. The graphite mixture material comprises graphite and a second solvent. The graphite is uniformly mixed in the second solvent, and the weight percentage of the graphite is between 20% and 40%.

Abstract: A sensing material for sensing a physiological parameter includes a carbon black material, a graphene material and a glue material, wherein the carbon black material, the graphene material and the glue material are mixed together based on a specific weight ratio.

Abstract: The invention provides a solar energy system. A flexible transparent body includes a top surface, a bottom surface and two edges, wherein the top surface is a light receiving surface for receiving light with a first wave-length. A plurality of solar cells is disposed on at least one of the edges of the flexible transparent body, wherein the solar cells can covert light having a second wave-length into electrical energy. A wavelength converting layer is provided for converting light with the first wave-length to light with the second wave-length.

Abstract: A light emitting unit array including a plurality of micro-light emitting diodes (?-LEDs) is provided. The micro-light emitting diodes are arranged in an array on a substrate, and each of the micro-light emitting diodes includes a reflection layer, a light emitting structure, and a light collimation structure. The light emitting structure is disposed on the reflection layer, and includes a first type doped semiconductor layer, an active layer, and a second type doped semiconductor layer that are stacked sequentially. At least a portion of the first type doped semiconductor layer, the active layer, and the second type doped semiconductor layer are sandwiched between the reflection layer and the light collimation structure.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing method of the light emitting device having auto-cloning photonic crystal structures is presented here.

Abstract: A flexible light source module including a flexible substrate, a flexible light guide film and a plurality of point light sources is provided. The flexible light guide film including light-guiding portions is disposed on the point light sources. Each of the light-guiding portions includes a light incident surface and a light emitting surface. The light incident surface includes light incident sub-surfaces. The light emitting surface includes light emitting sub-surfaces, and the one closest to the geometric center of the light-guiding portion is a first light emitting sub-surface. The absolute values of the tangent slopes of the first light emitting sub-surface are ascending with approaching the geometric center of the light-guiding portion. The light beams emitted from the point light sources exit out of the flexible light source module via the flexible light guide film so that the flexible light source module provides a uniform planar light source.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing method of the light emitting device having auto-cloning photonic crystal structures is presented here.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing methods of the light emitting device having auto-cloning photonic crystal structures are also presented.

Abstract: A new light emitting device is disclosed, including a polarizing surface layer, a light emitting layer which emits light at a wavelength, and a light transformation layer disposed between the light emitting layer and the reflective layer, wherein the light emitting layer is disposed between the reflective layer and the polarizing surface layer, and an optical thickness between the light emitting layer and the reflective layer is less than a value of five times of a quarter of the wavelength.

Abstract: A collimating light emitting device comprises a patterned optical layer able to redirect divergent light to light beam with uniform direction without utilizing external lenses thereby decreasing the size. The collimating light emitting device of the present invention may be utilized as a micro array projection device. The patterned optical layer may also be utilized in a single-die light-emitting device, thereby enhancing collimation. The manufacturing methods of the collimating light emitting device are also presented.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing methods of the light emitting device having auto-cloning photonic crystal structures are also presented.

Abstract: A flexible light source module including a flexible substrate, a flexible light guide film and a plurality of point light sources is provided. The flexible light guide film including light-guiding portions is disposed on the point light sources. Each of the light-guiding portions includes a light incident surface and a light emitting surface. The light incident surface includes light incident sub-surfaces. The light emitting surface includes light emitting sub-surfaces, and the one closest to the geometric center of the light-guiding portion is a first light emitting sub-surface. The absolute values of the tangent slopes of the first light emitting sub-surface are ascending with approaching the geometric center of the light-guiding portion. The light beams emitted from the point light sources exit out of the flexible light source module via the flexible light guide film so that the flexible light source module provides a uniform planar light source.

Abstract: A light emitting unit array including a plurality of micro-light emitting diodes (?-LEDs) is provided. The micro-light emitting diodes are arranged in an array on a substrate, and each of the micro-light emitting diodes includes a reflection layer, a light emitting structure, and a light collimation structure. The light emitting structure is disposed on the reflection layer, and includes a first type doped semiconductor layer, an active layer, and a second type doped semiconductor layer that are stacked sequentially. At least a portion of the first type doped semiconductor layer, the active layer, and the second type doped semiconductor layer are sandwiched between the reflection layer and the light collimation structure.