Patents by Inventor Chenyao HAN

Chenyao HAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250155589
    Abstract: The present disclosure belongs to the technical field of neutron detection, and it relates to a structure for slow neutron detection and a method for energy spectrum measurement of slow neutrons, wherein the structure for slow neutron detection comprises: a shielding barrel, which is configured as square with an opening; and a detector unit, which is a slow neutron detector with position resolution function, wherein the detector unit is completely wrapped in the shielding barrel, and the detector unit is placed close to one of the sides of the shielding barrel that is perpendicular to the open side of the shielding barrel. When the structure for slow neutron detection moves at a set speed, the incident energy spectrum of slow neutrons can be inversely extrapolated on the basis of the number of slow neutrons at different depths.
    Type: Application
    Filed: August 27, 2024
    Publication date: May 15, 2025
    Inventors: Quanqi Shi, Chenyao Han, Shuo Wang, Xianghong Jia, Xiaoli Wang
  • Patent number: 12264310
    Abstract: The present invention provides an intracellular radiation microdosimetric detection structure and detection method, and relates to the field of radiation microdosimetric detection technologies. The detection structure includes a first semiconductor detector unit, a first pixel array detector, a cellular microfluidic chip, a second pixel array detector, and a second semiconductor detector unit that are sequentially arranged in layers. The cellular microfluidic chip is configured for cell fixation and culture. The first semiconductor detector unit and the second semiconductor detector unit form a charged particle energy information detector combination for detecting deposit energy of charged particles in a semiconductor detector. The first pixel array detector and the second pixel array detector form a charged particle flux and position information detector combination for measuring a flux and an angle of charged particles incident at a position of the cellular microfluidic chip.
    Type: Grant
    Filed: November 18, 2024
    Date of Patent: April 1, 2025
    Assignee: SHANDONG UNIVERSITY
    Inventors: Xianghong Jia, Pengzhi He, Chenyao Han, Quanqi Shi, Xiaoli Wang, Xiaoyan Gao, Shuai Wang, Shucheng Shi, Weiming Li
  • Patent number: 11822026
    Abstract: The present application relates to a detection structure for fast neutrons and a method for acquiring a neutron energy spectrum, the detection structure for fast neutrons comprises seven semiconductor detection units and a conversion layer made of a hydrogen-containing material, the seven semiconductor detection units comprise a first, a second, a third, a fourth, a fifth, a sixth and a seventh semiconductor detection unit arranged sequentially, the first, the fourth and the seventh semiconductor detection unit constitute an anticoincidence detection group, the second and the third semiconductor detection unit constitute a neutral particle background detection group, the fifth and the sixth semiconductor detection unit constitute a recoil proton detection group, the conversion layer is disposed between the fourth and the fifth semiconductor detection unit, incident neutrons collision with hydrogen atomic nuclei and generate the recoil protons.
    Type: Grant
    Filed: February 8, 2023
    Date of Patent: November 21, 2023
    Assignee: SHANDONG UNIVERSITY
    Inventors: Shuo Wang, Chenyao Han, Quanqi Shi, Xiaoli Wang, Pengzhi He
  • Publication number: 20230184968
    Abstract: The present application relates to a detection structure for fast neutrons and a method for acquiring a neutron energy spectrum, the detection structure for fast neutrons comprises seven semiconductor detection units and a conversion layer made of a hydrogen-containing material, the seven semiconductor detection units comprise a first, a second, a third, a fourth, a fifth, a sixth and a seventh semiconductor detection unit arranged sequentially, the first, the fourth and the seventh semiconductor detection unit constitute an anticoincidence detection group, the second and the third semiconductor detection unit constitute a neutral particle background detection group, the fifth and the sixth semiconductor detection unit constitute a recoil proton detection group, the conversion layer is disposed between the fourth and the fifth semiconductor detection unit, incident neutrons collision with hydrogen atomic nuclei and generate the recoil protons.
    Type: Application
    Filed: February 8, 2023
    Publication date: June 15, 2023
    Inventors: Shuo WANG, Chenyao HAN, Quanqi SHI, Xiaoli WANG, Pengzhi HE