Patents by Inventor Chenyu Pan

Chenyu Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240354739
    Abstract: The present application provides a card binding method, a user terminal, a server, a card binding system and a storage medium. The method includes accepting an access from a user terminal to a first page address indicated by the user terminal calling a first application to scan an information carrier pattern, and acquiring a card number of a target card; acquiring user information about a target user from a back-end server of the first application; sending, to the user terminal, a second page address corresponding to a redirected card binding page; receiving a card binding confirmation message indicating identity information about the target user; and interacting with a card issuing server and a back-end server of a card binding application by using the identity information, to complete a binding between a card identifier of the target card and a user identifier of the target user in the card binding application.
    Type: Application
    Filed: February 15, 2022
    Publication date: October 24, 2024
    Inventors: Jianbo CAI, Changsheng SHAN, Dezhong NI, Yuhang GUO, Chenyu PAN, Rui LU
  • Patent number: 6410888
    Abstract: A method is provided for the rapid. cooling of a processed semiconductor wafer after a wafer heating by radiation process. The method includes the introduction of a radiation absorbing material element between the processed wafer and highly reflective surfaces—after a wafer heating by radiation process. The highly reflective surfaces reflect and re-direct radiant energy from the processed wafer and its surrounding components back to the processed wafer, impeding its cooling process. The radiation-absorbing material element, once between the processed wafer and the highly reflective surfaces, absorbs radiation from the processed wafer and its surrounding components, expediting their cooling process. Accordingly, significant time is saved for the cooling process, thus improving overall wafer throughput.
    Type: Grant
    Filed: April 30, 2001
    Date of Patent: June 25, 2002
    Assignee: ASM America, Inc.
    Inventor: Chenyu Pan
  • Publication number: 20010025841
    Abstract: A method is provided for the rapid cooling of a processed semiconductor wafer after a wafer heating by radiation process. The method includes the introduction of a radiation absorbing material element between the processed wafer and highly reflective surfaces—after a wafer heating by radiation process. The highly reflective surfaces reflect and re-direct radiant energy from the processed wafer and its surrounding components back to the processed wafer, impeding its cooling process. The radiation-absorbing material element, once between the processed wafer and the highly reflective surfaces, absorbs radiation from the processed wafer and its surrounding components, expediting their cooling process. Accordingly, significant time is saved for the cooling process, thus improving overall wafer throughput.
    Type: Application
    Filed: April 30, 2001
    Publication date: October 4, 2001
    Inventor: Chenyu Pan
  • Patent number: 6259062
    Abstract: A method is provided for the rapid cooling of a processed semiconductor wafer after a wafer heating by radiation process. The method includes the introduction of a radiation absorbing material element between the processed wafer and highly reflective surfaces—after a wafer heating by radiation process. The highly reflective surfaces reflect and re-direct radiant energy from the processed wafer and its surrounding components back to the processed wafer, impeding its cooling process. The radiation-absorbing material element, once between the processed wafer and the highly reflective surfaces, absorbs radiation from the processed wafer and its surrounding components, expediting their cooling process. Accordingly, significant time is saved for the cooling process, thus improving overall wafer throughput.
    Type: Grant
    Filed: December 3, 1999
    Date of Patent: July 10, 2001
    Assignee: ASM America, Inc.
    Inventor: Chenyu Pan
  • Patent number: 5589231
    Abstract: The present invention is directed to a method of producing diamond films through the thermal dissociation of molecular chlorine into atomic chlorine in a heated graphite heat exchanger at temperatures of from about 1,100.degree. C. to about 1,800.degree. C. The atomic chlorine is subsequently rapidly mixed with molecular hydrogen and carbon-containing species downstream. Atomic hydrogen and the carbon precursors are produced through rapid hydrogen abstraction reactions of atomic chlorine with molecular hydrogen and hydrocarbons at the point where they mix. The mixed gases then flow across a heated substrate, where diamond is deposited as a film. Diamond deposits have been confirmed by Raman spectroscopy.
    Type: Grant
    Filed: April 4, 1995
    Date of Patent: December 31, 1996
    Assignee: Rice University
    Inventors: Robert H. Hauge, Chenyu Pan