Abstract: Provided are a composition, a method of treating a metal-containing layer by using the composition, and a method of manufacturing a semiconductor device by using the composition. The composition may include an oxidizing agent, an ammonium-containing compound, and an etching controller. The etching controller may include a compound represented by Formula 1. A description of Formula 1 is provided herein.

Abstract: Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.

Abstract: Provided are a composition, a method of treating a metal-containing layer by using the same, and a method of manufacturing a semiconductor device by using the same, the composition including an oxidizing agent, an ammonium-based buffer, and an etching controller, wherein the etching controller includes a compound represented by Formula 1. A description of Formula 1 is provided in the specification.

Abstract: Provided are a composition, a method of treating a metal-containing layer by using the same, and a method of manufacturing a semiconductor device by using the same, the composition including an oxidizer, an ammonium-based buffer, and an etching controller, wherein the etching controller includes a compound represented by Formula 1.

Abstract: Provided are a composition, a method of treating a metal-containing layer by using the same, and/or a method of manufacturing a semiconductor device by using the same. The composition includes an oxidizing agent, an acid, and a selective etching inhibitor. The selective etching inhibitor may include a polymer including a first repeating unit represented by Formula 1, a second repeating unit represented by Formula 2, or any combination thereof. Descriptions of Formulae 1 and 2 are provided in the specification.

Abstract: A composition for a photoelectric device includes a compound represented by Chemical Formula 1, and an image sensor and an electronic device including the same: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Provided are a composition, a method of treating a metal-containing film by using the same, and a method of manufacturing a semiconductor device by using the composition, the composition including an oxidizing agent, an acid, and a selective etching inhibitor, wherein the selective etching inhibitor includes an ammonium compound and a polymer having a nitrogen-containing repeating unit.

Abstract: A composition may include a fluorine-containing compound, an oxidizing agent, a titanium etching inhibitor, and a solvent. The titanium etching inhibitor may include a compound represented by Formula 1: A description of Formula 1 is provided in the present specification. A cleaning method may use the composition. A method of manufacturing a semiconductor device may use the composition.

Abstract: An etching composition may include an oxidizing agent, an accelerator, an ammonium salt, and an aqueous solvent, wherein the accelerator may include one or more compounds represented by Formula 1, and the ammonium salt may include at least one compound having a structure in which at least one of hydrogen ions (H+) of a hydroxyl group (*—OH) or a thiol group (*—SH) included in the accelerator is substituted with an ammonium cation (NH4+): Formula 1 is as described in the present specification.

Abstract: Provided are an etching composition including a hypervalent iodine-containing compound, a method of etching a metal-containing layer by using the same, and a method of manufacturing a semiconductor device by using the same.

Abstract: Provided are an etching composition, a method of etching a metal-containing film by using the same, and a method of manufacturing a semiconductor device by using the same. The etching composition may include an oxidizing agent, a buffer, and a selective etching inhibitor. The selective etching inhibitor may include a first compound represented by Formula 1 and a second compound different from the first compound. The second compound may include a ring. The ring may be a pyrazole group, an imidazole group, a triazole group, or a tetrazole group, or the ring may be a pyrazole group, an imidazole group, or a triazole group, each condensed with a benzene group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, or any combination thereof. A description of Formula 1 is provided in the present specification.

Abstract: Provided are an etching composition, a method of etching a metal-containing film using the same, and a method of manufacturing a semiconductor device by using the same. The etching composition includes an oxidizing agent, an acid, and a selective etching inhibitor, wherein the oxidizing agent is metal-free, the selective etching inhibitor includes a copolymer including a first repeating unit and a second repeating unit, the first repeating unit is different from the second repeating unit, and the first repeating unit is a nitrogen-containing repeating unit.

Abstract: An etching composition for a titanium-containing layer may include an oxidant, an inorganic acid, and a selective etching inhibitor. The inorganic acid may include phosphorus-based inorganic acid, chlorine-based inorganic acid, or fluorine-based inorganic acid, or any combination thereof. The selective etching inhibitor may include a polymer having a nitrogen-containing repeating unit.

Abstract: An etching composition may include an oxidizer, an ammonium salt, an aqueous solvent, and an accelerator. A method of etching a metal-containing film may be performed using the etching composition, and a method of manufacturing a semiconductor device may be performed using the etching composition.

Abstract: A cleaning composition for removing residues on surfaces contains a solvent and a cleaning accelerator, but does not contain an oxidant, wherein the cleaning accelerator includes at least one of a salt represented by Formula 1A or a salt represented by Formula 1B. A method of cleaning a metal-containing film includes preparing the cleaning composition, and bring the cleaning composition into contact with a metal-containing film provided on a substrate, the metal-containing film having a surface on which residues are generated.

Abstract: A composition for a photoelectric device includes a compound represented by Chemical Formula 1, and an image sensor and an electronic device including the same: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Disclosed is a cover window for protecting a display panel. The present cover window comprises: a transparent sheet through which light of the display panel passes, the transparent sheet including nano-inorganic particles; and a coating layer disposed on the transparent sheet.

Abstract: A stacked structure including a conductive layer disposed on a substrate and a protective layer disposed on the conductive layer and including a cured product of a cation polymerizable compound and a cation initiator, wherein the cation initiator comprises a cation and a resonance-stabilized counteranion, a window for an electronic device, and an electronic device that includes the stacked structure.

Abstract: A coating film to prevent a conspicuous fingerprint has a water contact angle of no less than 60° so that most of water contained in fingerprints on the coating film evaporates without forming a layer adsorbed on the coating film. Further, the coating film has lipophilicity and has a diiodomethane contact angle of no more than 45° so that the coating film exhibits enhanced affinity to fingerprints, which primarily contain oily components.

Abstract: A composition comprising a cation polymerizable organic compound and an organosiloxane comprising at least one silsesquioxane, wherein each silsesquioxane independently comprises an inorganic core having a SiO3/2 moiety and an organic group having a cation polymerizable functional group, wherein the organic group in the comprises a first organic group represented by Chemical Formula 1 a second organic group represented by Chemical Formula 2, R1—(CH2)n1—* ??Chemical Formula 1 R2—(CH2)n2—* ??Chemical Formula 2 wherein R1 and R2 are each independently the cation polymerizable functional group, n1 is an integer ranging from 1 to 3, and n2 is an integer of 4 or greater.