Abstract: Proposed is a vehicle air conditioner, which performs cooling and heating by supplying cold air and hot air in an interior of the vehicle. The vehicle air conditioner includes an intake unit installed at an engine room and configured to suction and blows internal and external air to the interior, a heat exchanger unit configured to cool or heat and supply air blown from the intake unit, a case cover installed on an outer surface of the intake unit to cover the intake unit, and a case soundproofing member installed between an intake case of the intake unit and the case cover and configured to block noise that is transmitted to the intake case from the outside of the case cover.

Abstract: A photoplethysmography sensor that includes a photoelectric conversion element including a first terminal and a second terminal, and that receives light reflected from a blood vessel and generates a current corresponding to the received light, a current-to-voltage converter that receives the generated current through a first input terminal and a second input terminal, and generates an output voltage corresponding to the received current, and a switch that, in response to a control signal of a first level, connects the first and second terminals of the photoelectric conversion element respectively to the first and second input terminals of the current-to-voltage converter and in response to the control signal of a second level different from the first level, connects the first and second terminals of the photoelectric conversion element respectively to the second and first input terminals of the current-to-voltage converter.

Abstract: An embodiment joint structure of a vehicle body includes a front body module fixed to a front part of an under body, wherein the front body module is a fixed part, a rear body module detachably coupled to a rear part of the under body and the front body module, wherein the rear body module is a variable part having any predetermined shape of a plurality of predetermined shapes, a fixed part joint beam connected to the front body module, a variable part joint beam connected to the rear body module, and a joint unit including a block, wherein the fixed part joint beam and the variable part joint beam are inserted in the block in a front-to-back direction of the vehicle body, and the joint unit engages with the fixed part joint beam and the variable part joint beam.

Abstract: A semiconductor device may include: a gate structure including insulating layers and control gates, which are alternately stacked; a channel layer penetrating the gate structure; floating gates respectively located between the control gates and the channel layer; first blocking patterns respectively located between the control gates and the floating gates; and a second blocking pattern located between the first blocking patterns and the control gates and between the control gates and the insulating layers, the second blocking pattern including a material with a dielectric constant that is higher than that of the first blocking patterns.

Abstract: A three-dimensional (3D) memory structure includes a memory array formed on a side of a substrate, a far-back-end-of-line (FBEOL) structure formed on the memory array, and a back-end-of-line (BEOL) structure formed on another side of the substrate opposite the side on which the memory array and the BEOL structure are formed. Methodologies to fabricate the 3D memory structure are also disclosed and include forming the memory array on the substrate, forming the FBEOL on the memory array, flipping the substrate, and forming the BEOL on the opposite side of the substrate. Alternative 3D memory structures and fabrication methodologies are also disclosed.

Abstract: A memory chip, and a method of manufacturing the memory chip, are provided. The memory chip includes a memory region including cell plugs in which data is stored and a guard-ring surrounding the memory region. The guard-ring includes sub-layers of the same materials arranged in the same order as layers forming the cell plugs.

Abstract: The present invention relates to a fan motor comprising: a housing; a vane hub received in the housing; an insulator mounted inside the vane hub to insulate a stator comprising a stator core and a stator coil wound on the stator core; and a lower bracket coupled to the insulator, wherein a plurality of power line lead-out holes are formed in the lower bracket so as to allow a power line extending from the stator coil to pass therethrough, and a plurality of air holes are formed in the circumferential direction between the respective power line lead-out holes so as to allow air to be suctioned toward the stator. Accordingly, a flow channel of air to for cooling a stator can be formed inside a stator slot, and thus cooling of the stator can be facilitated.

Abstract: Disclosed is a thermal management system for a vehicle, the thermal management system including a refrigerant line in which a refrigerant circulates, the refrigerant line having a closed loop including a compressor, a condensing core, an expansion valve, and an evaporation core, a first coolant line in which a coolant flows while circulating between the evaporation core and an electronic component of a vehicle, a second coolant line in which the coolant flows while circulating between the condensing core and a radiator, and a fluid line in which a non-conductive fluid flows while circulating between an interior air conditioning part and the condensing core or the evaporation core, in which a heating core of the interior air conditioning part and a battery are connected, and the non-conductive fluid is introduced into a battery housing and is in direct thermal conduction with a battery cell.

Abstract: An embodiment cowl structure of a vehicle includes a first cowl top panel formed in a bent structure to define a top space portion having an open rear surface, an upper portion of the first cowl top panel being coupled to and supporting a lower portion of a windshield glass, and a second cowl top panel coupled to the first cowl top panel and closing the open rear surface of the top space portion.

Abstract: Provided herein may be a semiconductor device and a method of manufacturing the same. A method of manufacturing a semiconductor device may include forming a stacked body in which first and second material layers are alternately stacked, the stacked body being formed in a chip area and a guard area, wherein the guard area is adjacent to the chip area, forming a plurality of first openings that pass through the stacked body of the guard area, the first openings being spaced apart from each other, forming a second opening from the plurality of first openings by expanding each of the plurality of first openings so that the plurality of first openings are coupled to each other, and forming a chip guard by filling the second opening with an insulating material.

Abstract: A semiconductor device may include a first gate structure including stacked first selection lines, each first selection line including a first cell region and a first pad region adjacent in a first direction, a second gate structure including stacked second selection lines, each second selection line including a second cell region and a second pad region adjacent in the first direction, first contact plugs extending through the first pad region and respectively connected to the first selection lines, and second contact plugs extending through the second pad region and respectively connected to the second selection lines, and in a second direction crossing the first direction, the first pad region may have a width greater than that of the first cell region, and the second pad region may have a width greater than that of the first pad region.

Abstract: Provided herein is a method of manufacturing a memory device. The method may include forming an ion implantation region in a portion of an outer portion of an underlying structure by implanting ions into the underlying structure, transforming the ion implantation region into an etch stop pattern, forming a target structure on the underlying structure including the etch stop pattern, and performing an etching process to form first holes and second holes in the target structure, wherein the first width of the first holes is different than the second width of the second holes. The etching process is performed until the etch stop pattern is exposed through the first holes and the second holes.

Abstract: A three-dimensional (3D) memory structure includes a memory array formed on a side of a substrate, a far-back-end-of-line (FBEOL) structure formed on the memory array, and a back-end-of-line (BEOL) structure formed on another side of the substrate opposite the side on which the memory array and the BEOL structure are formed. Methodologies to fabricate the 3D memory structure are also disclosed and include forming the memory array on the substrate, forming the FBEOL on the memory array, flipping the substrate, and forming the BEOL on the opposite side of the substrate. Alternative 3D memory structures and fabrication methodologies are also disclosed.

Abstract: A semiconductor device may include: a gate structure including insulating layers and control gates, which are alternately stacked; a channel layer penetrating the gate structure; floating gates respectively located between the control gates and the channel layer; first blocking patterns respectively located between the control gates and the floating gates; and a second blocking pattern located between the first blocking patterns and the control gates and between the control gates and the insulating layers, the second blocking pattern including a material with a dielectric constant that is higher than that of the first blocking patterns.

Abstract: The present invention relates to a portable water bottle cap with a built-in filter, and more particularly a portable water bottle cap with a built-in filter, the portable water bottle cap including a cap member removably coupled to an opening of a water bottle, a filter receiving member connected to the cap member at one side thereof, a filter member received in the filter receiving member, the filter member having a filter configured to filter foreign matter contained in water of the water bottle, and an air introduction member connected to the other side of the filter receiving member, the air introduction member being configured to guide air into the water bottle.

Abstract: A semiconductor device may include a stack including a chip region and a guard region surrounding the chip region, contact structures positioned in the chip region, and a chip guard structure positioned in the guard region and including first protrusions protruding by a first width and second protrusions protruding by a second width greater than the first width.

Abstract: A battery case and a heat management system for a battery module having the battery case, in which the battery case ensures airtightness allowing a liquid immersion cooling method based on a nonconductive refrigerant to be used in managing the heat of the battery module, and the internal temperature of the battery case and the level of the nonconductive refrigerant are controlled to remain constant so as to keep the battery cell below an ignition point, thereby preventing a fire from breaking out.

Abstract: An embodiment provides an air conditioner for a vehicle, the air conditioner including an air conditioning unit having a heat exchanger disposed therein, and a blower unit configured to supply air to the air conditioning unit, in which the blower unit includes a blower casing having an inner surface, and a blower configured to allow the air to flow toward the inner surface, in which the inner surface includes a first surface, and a second surface disposed on the first surface and inclined, and in which the first and second surfaces divide a direction of the air, which is allowed to flow by the blower, into at least two directions. Therefore, the air conditioner for a vehicle may improve performance and quality of the blower unit.

Abstract: Mesoporous silica containing zinc oxide and a production method therefor are described. In the mesoporous silica containing zinc oxide, which is spherical mesoporous silica, an inside of the mesoporous silica contains a plurality of mesopores, zinc ions are bound to the mesopores to form zincosilicate, and zinc oxide is bound to the zincosilicate. According to an embodiment, it is possible to provide mesoporous silica having a large specific surface area and pore volume and to improve economic efficiency and production yield by simplifying the production process.

Abstract: A semiconductor device may include: a first gate structure in a first memory block and including stacked first gate lines, the first gate lines extending from a plane center region to a plane edge region; a second gate structure in a second memory block adjacent to the first memory block and including stacked second gate lines, the second gate lines extending from the plane center region to the plane edge region; an isolation insulating structure located a) between the first gate structure and the second gate structure in the plane edge region, the isolation insulating structure including stacked insulating plates and insulating pillars extending through the insulating plates; and a slit structure located a) between the first gate structure and the second gate structure and b) in the plane center region, the slit structure connected to the isolation insulating structure, and including irregularities on a sidewall thereof.