Abstract: Provided herein may be a semiconductor device and a method of manufacturing the same. A method of manufacturing a semiconductor device may include forming a stacked body in which first and second material layers are alternately stacked, the stacked body being formed in a chip area and a guard area, wherein the guard area is adjacent to the chip area, forming a plurality of first openings that pass through the stacked body of the guard area, the first openings being spaced apart from each other, forming a second opening from the plurality of first openings by expanding each of the plurality of first openings so that the plurality of first openings are coupled to each other, and forming a chip guard by filling the second opening with an insulating material.

Abstract: A semiconductor device may include a first gate structure including stacked first selection lines, each first selection line including a first cell region and a first pad region adjacent in a first direction, a second gate structure including stacked second selection lines, each second selection line including a second cell region and a second pad region adjacent in the first direction, first contact plugs extending through the first pad region and respectively connected to the first selection lines, and second contact plugs extending through the second pad region and respectively connected to the second selection lines, and in a second direction crossing the first direction, the first pad region may have a width greater than that of the first cell region, and the second pad region may have a width greater than that of the first pad region.

Abstract: Provided herein is a method of manufacturing a memory device. The method may include forming an ion implantation region in a portion of an outer portion of an underlying structure by implanting ions into the underlying structure, transforming the ion implantation region into an etch stop pattern, forming a target structure on the underlying structure including the etch stop pattern, and performing an etching process to form first holes and second holes in the target structure, wherein the first width of the first holes is different than the second width of the second holes. The etching process is performed until the etch stop pattern is exposed through the first holes and the second holes.

Abstract: A three-dimensional (3D) memory structure includes a memory array formed on a side of a substrate, a far-back-end-of-line (FBEOL) structure formed on the memory array, and a back-end-of-line (BEOL) structure formed on another side of the substrate opposite the side on which the memory array and the BEOL structure are formed. Methodologies to fabricate the 3D memory structure are also disclosed and include forming the memory array on the substrate, forming the FBEOL on the memory array, flipping the substrate, and forming the BEOL on the opposite side of the substrate. Alternative 3D memory structures and fabrication methodologies are also disclosed.

Abstract: A semiconductor device may include: a gate structure including insulating layers and control gates, which are alternately stacked; a channel layer penetrating the gate structure; floating gates respectively located between the control gates and the channel layer; first blocking patterns respectively located between the control gates and the floating gates; and a second blocking pattern located between the first blocking patterns and the control gates and between the control gates and the insulating layers, the second blocking pattern including a material with a dielectric constant that is higher than that of the first blocking patterns.

Abstract: The present invention relates to a portable water bottle cap with a built-in filter, and more particularly a portable water bottle cap with a built-in filter, the portable water bottle cap including a cap member removably coupled to an opening of a water bottle, a filter receiving member connected to the cap member at one side thereof, a filter member received in the filter receiving member, the filter member having a filter configured to filter foreign matter contained in water of the water bottle, and an air introduction member connected to the other side of the filter receiving member, the air introduction member being configured to guide air into the water bottle.

Abstract: A semiconductor device may include a stack including a chip region and a guard region surrounding the chip region, contact structures positioned in the chip region, and a chip guard structure positioned in the guard region and including first protrusions protruding by a first width and second protrusions protruding by a second width greater than the first width.

Abstract: A battery case and a heat management system for a battery module having the battery case, in which the battery case ensures airtightness allowing a liquid immersion cooling method based on a nonconductive refrigerant to be used in managing the heat of the battery module, and the internal temperature of the battery case and the level of the nonconductive refrigerant are controlled to remain constant so as to keep the battery cell below an ignition point, thereby preventing a fire from breaking out.

Abstract: Mesoporous silica containing zinc oxide and a production method therefor are described. In the mesoporous silica containing zinc oxide, which is spherical mesoporous silica, an inside of the mesoporous silica contains a plurality of mesopores, zinc ions are bound to the mesopores to form zincosilicate, and zinc oxide is bound to the zincosilicate. According to an embodiment, it is possible to provide mesoporous silica having a large specific surface area and pore volume and to improve economic efficiency and production yield by simplifying the production process.

Abstract: An embodiment provides an air conditioner for a vehicle, the air conditioner including an air conditioning unit having a heat exchanger disposed therein, and a blower unit configured to supply air to the air conditioning unit, in which the blower unit includes a blower casing having an inner surface, and a blower configured to allow the air to flow toward the inner surface, in which the inner surface includes a first surface, and a second surface disposed on the first surface and inclined, and in which the first and second surfaces divide a direction of the air, which is allowed to flow by the blower, into at least two directions. Therefore, the air conditioner for a vehicle may improve performance and quality of the blower unit.

Abstract: A semiconductor device may include: a first gate structure in a first memory block and including stacked first gate lines, the first gate lines extending from a plane center region to a plane edge region; a second gate structure in a second memory block adjacent to the first memory block and including stacked second gate lines, the second gate lines extending from the plane center region to the plane edge region; an isolation insulating structure located a) between the first gate structure and the second gate structure in the plane edge region, the isolation insulating structure including stacked insulating plates and insulating pillars extending through the insulating plates; and a slit structure located a) between the first gate structure and the second gate structure and b) in the plane center region, the slit structure connected to the isolation insulating structure, and including irregularities on a sidewall thereof.

Abstract: There are provided a semiconductor memory device and a manufacturing method of a semiconductor memory device. The semiconductor memory device includes a stack structure including a cell array region and a contact region extending from the cell array region, a cell plug penetrating the cell array region of the stack structure, a conductive gate contact penetrating the contact region of the stack structure, and a plurality of first support structures bordering a perimeter of the conductive gate contact and disposed to be spaced apart from the center of the conductive gate contact at a first distance.

Abstract: A semiconductor device may include a gate structure including insulating layers and conductive layers that are alternately stacked, a real channel structure extending through the gate structure, a slit structure extending in a first direction along the sidewall of the gate structure, a contact structure extending through the gate structure and that is electrically connected to at least one conductive layer, among the conductive layers, and a pair of first supports extending in an arc form along the sidewall of the contact structure and that includes concave and convex parts on sidewalls of the first supports.

Abstract: Spherical mesoporous silica and a production method therefor are described. According to embodiments, it is possible to provide spherical mesoporous silica characterized by funnel-shaped pores having a large entrance size, and improve economic efficiency and production yield by simplifying the process for production of the spherical mesoporous silica. Further, it is possible to provide spherical mesoporous silica which has excellent adsorption performance due to its large specific surface area and pore volume, is capable of exhibiting an effect of releasing an adsorbed component for a long time after adsorption, and thus is highly usable as a delivery carrier, and a production method therefor.

Abstract: A semiconductor device may include: a first gate structure; a second gate structure; an isolation insulation structure configured to extend in a first direction between the first gate structure and the second gate structure, and to have a first width in a second direction intersecting the first direction; and a first support located between the first gate structure and the second gate structure, and configured to have a second width greater than the first width in the second direction. The isolation insulation structure may protrude into the first support.

Abstract: Disclosed herein is a method for providing a parking lot guidance service of a server. The method includes: receiving parking lot data including information of a parking space in a parking lot from an image capturing apparatus for a vehicle provided in the vehicle; generating a parking lot model representing a real-time parking situation of the parking lot as an image based on the received parking lot data; and providing the parking guidance service to a user terminal apparatus using the generated parking lot model.

Abstract: A composition containing a Dendropanax morbifera LEV. extract, of the present invention, has excellent activities of inhibiting the oxidation of A2E, inhibiting oxidized A2E-induced death of retinal pigmented epithelial cells, and inhibiting the accumulation of drusen, and thus can be used for preventing eye damage. In addition, a composition containing a Dendropanax morbifera LEV. extract, of the present invention, can be developed even into a therapeutic agent for various eye diseases and a health functional food.

Abstract: Various embodiments relate to a motor in which a structure of an insulator is improved. The motor includes an insulator module coupled to a top face of a stator core. The insulator module includes: each power terminal unit connected to each of 3-phases power lead wires; a neutral terminal unit connected to a neutral point of a coil; and an insulator body for achieving insulations between the power and neutral terminal units and the stator core, and between the power and neutral terminal units, wherein the power terminal unit and the neutral terminal unit are positioned at different vertical levels.

Abstract: Disclosed herein is a method for providing a parking lot guidance service of a server. The method includes: receiving parking lot data including information of a parking space in a parking lot from an image capturing apparatus for a vehicle provided in the vehicle; generating a parking lot model representing a real-time parking situation of the parking lot as an image based on the received parking lot data; and providing the parking guidance service to a user terminal apparatus using the generated parking lot model.

Abstract: Residue at the base of a feature in a substrate to be etched is limited so that improved profiles may be obtained when forming vertical, narrow pitch, high aspect ratio features, for example fin field effect transistor (FinFET) gates. A thin bottom layer of the feature is formed of a different material than the main layer of the feature. The bottom material may be comprised of a material that preferentially etches and/or preferentially oxidizes as compared to the main layer. The bottom layer may comprise silicon germanium. The preferential etching characteristics may provide a process in which un-etched residuals do not remain. Even if residuals remain, after etch of the feature, an oxidation process may be performed. Enhanced oxidation rates of the bottom material allow any remaining residual to be oxidized. Plasma oxidation may be used. The oxidized material may then be removed by utilizing standard oxide removal mechanisms.