Abstract: A test structure includes a terminal pattern, a first extending part, a second extending part and a measuring part. The terminal pattern includes a first terminal part, a second terminal part, a third terminal part and a fourth terminal part sequentially disposed and spaced apart from each other in a first direction. The first extending part is connected to the first terminal part and the second terminal part. The first extending part extends in a second direction crossing the first direction. The second extending part is connected to the third terminal part and the fourth terminal part. The second extending part extends in the second direction. The measuring part partially overlaps the first extending part and the second extending part.

Abstract: Provided are a backplane for a flat panel display device and a method of manufacturing the backplane. The method of manufacturing the backplane for a flat panel display device includes forming an insulation substrate on a glass substrate, forming a protection layer on the insulation substrate, the protection layer including a first opening exposing a portion of the insulation substrate, forming a first hole in the insulation substrate by removing the portion of the insulation substrate exposed by the first opening, and forming a transistor on the protection layer, the transistor including an active layer, a gate electrode, a source electrode, and a drain electrode. The insulation substrate may include a transistor area including the transistor, and a non-transistor area excluding the transistor and including the first hole.

Abstract: A organic light emitting display device includes a thin film transistor (TFT) having a gate electrode, a source electrode and a drain electrode which are insulated from the gate electrode, and a semiconductor layer which is insulated from the gate electrode and which contacts each of the source electrode and the drain electrode; and a pixel electrode electrically connected to one of the source electrode and the drain electrode. The gate electrode is made up of a first conductive layer and a second conductive layer on the first conductive layer, and the pixel electrode is formed of the same material as the first conductive layer of the gate electrode on a same layer as the first conductive layer of the gate electrode.

Abstract: An organic light emitting display apparatus including a substrate, a first touch sensing electrode layer on the substrate, a first protective layer on the substrate, the first protective layer covering the first touch sensing electrode layer, a ground layer on the first protective layer, the ground layer being electrically grounded, an insulating layer on the ground layer, and an organic light emitting device on the insulating layer.

Abstract: An organic light emitting diode display device and a method of manufacturing the same are disclosed. The organic light emitting diode display device includes a substrate having an emission section and a non-emission section, a semiconductor layer located on the substrate, a gate dielectric layer located over an entire front surface of the substrate, a gate electrode located in correspondence to the semiconductor layer, a dielectric layer located over the entire front surface of the substrate, source and drain electrodes and a first electrode located on the dielectric layer and electrically connected to the semiconductor layer, a pixel definition layer exposing a part of the first electrode, a spacer located on the pixel definition layer and located on the non-emission section of the substrate, an organic film layer located on the first electrode, and a second electrode located over the entire front surface of the substrate.

Abstract: A test structure includes a terminal pattern, a first extending part, a second extending part and a measuring part. The terminal pattern includes a first terminal part, a second terminal part, a third terminal part and a fourth terminal part sequentially disposed and spaced apart from each other in a first direction. The first extending part is connected to the first terminal part and the second terminal part. The first extending part extends in a second direction crossing the first direction. The second extending part is connected to the third terminal part and the fourth terminal part. The second extending part extends in the second direction. The measuring part partially overlaps the first extending part and the second extending part.

Abstract: Provided are a backplane for a flat panel display device and a method of manufacturing the backplane. The method of manufacturing the backplane for a flat panel display device includes forming an insulation substrate on a glass substrate, forming a protection layer on the insulation substrate, the protection layer including a first opening exposing a portion of the insulation substrate, forming a first hole in the insulation substrate by removing the portion of the insulation substrate exposed by the first opening, and forming a transistor on the protection layer, the transistor including an active layer, a gate electrode, a source electrode, and a drain electrode. The insulation substrate may include a transistor area including the transistor, and a non-transistor area excluding the transistor and including the first hole.

Abstract: An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a pixel defining layer formed on the source and drain electrodes, having an aperture to expose one of the source and drain electrodes; an intermediate layer formed in the aperture and comprising an organic light emitting layer; and a facing electrode which is formed on the intermediate layer. One of the source and drain electrodes has an extension that operates as a pixel electrode. The aperture exposes the extended portion. The intermediate layer is formed on the extended portion.

Abstract: A method of manufacturing an organic light emitting diode display includes forming an organic layer on a support, forming a touch sensor on the organic layer, the touch sensor including a touch electrode pattern and a polarizing layer, separating the touch sensor from the support by removing the organic layer, and attaching the touch sensor to an organic light emitting diode display panel.

Abstract: An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a pixel defining layer formed on the source and drain electrodes, having an aperture to expose one of the source and drain electrodes; an intermediate layer formed in the aperture and comprising an organic light emitting layer; and a facing electrode which is formed on the intermediate layer. One of the source and drain electrodes has an extension that operates as a pixel electrode. The aperture exposes the extended portion. The intermediate layer is formed on the extended portion.

Abstract: An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a pixel defining layer formed on the source and drain electrodes, having an aperture to expose one of the source and drain electrodes; an intermediate layer formed in the aperture and comprising an organic light emitting layer; and a facing electrode which is formed on the intermediate layer. One of the source and drain electrodes has an extension that operates as a pixel electrode. The aperture exposes the extended portion. The intermediate layer is formed on the extended portion.

Abstract: An organic light emitting diode display that includes a first electrode arranged on a substrate, an organic emission layer arranged on the first electrode and a second electrode arranged on the organic emission layer, the first electrode includes a first layer, a second layer and a third layer stacked sequentially on the organic emission layer, the second layer has a lower work function than the third. Here, the second layer has a higher work function than that of the third layer.

Abstract: An organic light emitting diode (OLED) display that includes a substrate, a thin film transistor, and a pixel electrode. The thin film transistor is formed on the substrate and includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. The pixel electrode is electrically connected to the thin film transistor and is formed on the same layer as the source electrode and the drain electrode. The source electrode and the drain electrode include a first conductive layer, and the pixel electrode includes a first conductive layer and a second conductive layer stacked thereon.

Abstract: A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.

Abstract: Embodiments relate to halftone masks that can uniformly form the height of an underlying layer in two regions that are spaced apart from each other, a manufacturing method thereof, and a method for forming a film using the same. The halftone mask includes a first light blocking unit and a second light blocking unit, and a semi-transmitting unit that is disposed adjacent to the side of the second light blocking unit. The first and second light blocking units block light and are spaced apart from each other at a predetermined interval. The semi-transmitting unit is positioned at a side far from the first light blocking unit and reduces intensity of light. Sum of the second length of the second light blocking unit and the third length of the semi-transmitting unit is larger than the first length of the first blocking unit.

Abstract: An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a pixel defining layer formed on the source and drain electrodes, having an aperture to expose one of the source and drain electrodes; an intermediate layer formed in the aperture and comprising an organic light emitting layer; and a facing electrode which is formed on the intermediate layer. One of the source and drain electrodes has an extension that operates as a pixel electrode. The aperture exposes the extended portion. The intermediate layer is formed on the extended portion.

Abstract: A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.

Abstract: An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a pixel defining layer formed on the source and drain electrodes, having an aperture to expose one of the source and drain electrodes; an intermediate layer formed in the aperture and comprising an organic light emitting layer; and a facing electrode which is formed on the intermediate layer. One of the source and drain electrodes has an extension that operates as a pixel electrode. The aperture exposes the extended portion. The intermediate layer is formed on the extended portion.

Abstract: A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.

Abstract: A flat panel display apparatus that can be manufactured with less patterning operations using a mask, and a method of manufacturing the same, the flat panel display apparatus including a substrate; an active layer of a thin film transistor (TFT); a first bottom electrode and a first top electrode of a capacitor; a first insulation layer formed on the substrate; a gate bottom electrode and a gate top electrode corresponding to the channel region; a second bottom electrode and a second top electrode of the capacitor; a pixel bottom electrode and a pixel top electrode; a second insulation layer formed on the gate electrode, the second electrode of the capacitor, and the pixel top electrode; and a source electrode and a drain electrode formed on the second insulation layer.