Abstract: An image of each field displayed on a plasma display panel corresponding to input image signals is divided into sub-fields of different weights, the sub-fields being divided into two continuous sub-field groups having a different weighting value, and in which the weighting values of the sub-fields combine to display grays. The method includes generating original grays; determining a diffusion filter value; generating final grays by applying the diffusion filter value to the original grays; generating gray data corresponding to the final grays, the gray data being distributed over the two sub-field groups; and displaying an image on the PDP according to the gray data. The disclosed method and system reduce flicker and contour noise and other display problems associated with the display of 50 Hz Phase Alternating by Line image signals.

Abstract: A method of driving a flat-panel display, to which k bits of gray-scale data consisting of first through j-th bits, each having a low weighted value, and (j+1)-th through k-th bits, each having a high weighted value, are input during each frame. The method includes time-dividing a unit frame into a plurality of sub-fields, displaying the first through j-th bits (j is an integer greater than 2) of the gray-scale data by a plurality of frames and displaying the (j+1)-th through k-th bits (k is an integer greater than 4) of the gray scale data by the plurality of sub-fields.

Abstract: A plasma display panel (PDP) power consumption controlling method by varying a number of sustain pulses according to a load ratio (L/R) includes setting a safety operating area (SOA) on the number of sustain pulses according to the L/R, and controlling the power consumption within the SOA. The entire range of the number of sustain pulses has an upper and a lower boundary value, and a number of sustain pulses corresponding to the respective L/R sections is established. When the L/R is the previous number of sustain discharging pulses and it digresses from the SOA, the number of sustain discharging pulses is converged to the upper boundary value when the L/R has increased, and is converged to the lower boundary value when the L/R has decreased.

Abstract: The present invention relates to an image display method and system for a plasma display panel (PDP), in which an image of each field displayed on the PDP corresponding to input image signals is divided into sub-fields of different weights, the sub-fields being divided into two continuous sub-field groups and a weighting value of the sub-field groups being different, and in which the weighting values of the sub-fields are combined to display grays. The method includes generating original grays; determining a diffusion filter value; generating final grays by applying the diffusion filter value to the original grays; generating gray data corresponding to the final grays, the gray data being distributed over the two sub-field groups; and displaying an image on the PDP according to the gray data. The disclosed method and system reduce flicker and contour noise and other display problems associated with the display of 50 Hz Phase Alternating by Line image signals.

Abstract: A photolithographic projection system for selectively irradiating a photosensitive layer on a wafer according to a predetermined pattern on a mask is discussed. The photolithographic projection system includes a radiation source which generates radiation such as light. A reflector reflects the radiation from the radiation source on a path which intersects the wafer. This reflector includes a radiation reflecting portion and a phase-shifting and partially reflecting portion adjacent the radiation reflecting portion. The reflecting portion may include a plurality of reflecting portions surrounded by the absorbing portion, or the reflecting portion may surround the absorbing portion. Alternately, the reflector may include a reflecting portion and an absorbing portion adjacent the reflecting portion. Related methods are also discussed.

Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+.first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

Abstract: A recording and reproducing apparatus using a video tape includes a user interfacer for generating comment information in response to a user key input, a video cassette recorder for recording the comment information on a predetermined region in a video tape, a transmission interfacer for enabling the user interfacer and the video cassette recorder to a transmit and receive a signal therebetween and a display for displaying a signal reproduced from the video cassette recorder so that user can recognize the signal. This apparatus is particularly useful for an educational-purposed video system.

Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of -/+ first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

Abstract: An aperture for an off-axis illumination (OAI) and a projection exposure apparatus which employs the same. In the aperture for an OAI having a light-intercepting region and a light-transmitting region, at least a portion of the light-transmitting region is prismoidal and diffracts incident light toward the periphery of the condenser lens. Accordingly, light intensity is increased due to an increased light-transmitting region, which can lead to a reduction in the exposure time required for photolithography procedures and to an increased productivity of semiconductor devices.

Abstract: A photolithographic projection system for transferring a predetermined pattern from a photomask to a wafer includes a radiation source and a grating mask. The radiation source projects radiation along a path through the photomask toward the wafer. The grating mask is positioned along the radiation path and is separate from the photomask. In a method for transferring a predetermined pattern from a photomask to a wafer, radiation is projected along a path through a grating mask and a photomask toward the wafer, and the grating mask is separate from the photomask.

Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+. first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of -/+ first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+. first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

Abstract: A method for forming a mask pattern using a multi-layer photoresist film process is disclosed. The processing is simplified from known processes by using a silylated photoresist film. A first photoresist layer is formed on substrate and part of the surface of the photoresist layer is silylated to thereby form a silylation layer. Then, a second photoresist layer is formed on the silylation layer, which is then exposed through the photo mask having a predetermined pattern. A second photoresist pattern is then formed after development. Then, a silylation layer pattern is formed by etching-back the silylation layer using the second photoresist pattern as an etching mask. The silylation pattern is then oxidized, and the first photoresist layer is etched using the oxidized silylation pattern, thereby forming a first photoresist pattern. A resolution increasing effect can be maintained using the two layer photoresist film structure without the need for an intermediate oxide film.