Patents by Inventor Cheol Hwan Park
Cheol Hwan Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11973106Abstract: A semiconductor device includes a lower electrode; a supporter supporting an outer wall of the lower electrode; a dielectric layer formed on the lower electrode and the supporter; an upper electrode on the dielectric layer; a first interfacial layer disposed between the lower electrode and the dielectric layer and selectively formed on a surface of the lower electrode among the lower electrode and the supporter; and a second interfacial layer disposed between the dielectric layer and the upper electrode, wherein the first interfacial layer is a stack of a metal oxide contacting the lower electrode and a metal nitride contacting the dielectric layer.Type: GrantFiled: July 5, 2022Date of Patent: April 30, 2024Assignee: SK hynix Inc.Inventors: Jae Hee Song, Dong Hyun Lee, Kyung Woong Park, Cheol Hwan Park, Ki Vin Im
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Publication number: 20240118196Abstract: In the case of a gas in which several gases are mixed, a type and concentration of the gas may be incorrectly measured when measured using only an optical band-pass filter. The invention of the present application is directed to providing a technology in which a plurality of broadband band-pass filters having overlapping regions are provided to calculate a magnitude of absorption for each wavelength band for light passing through each broadband band-pass filter, thereby identifying the presence of a gas of interest and the presence of a gas other than the gas of interest.Type: ApplicationFiled: September 8, 2023Publication date: April 11, 2024Inventors: Cheol Woo NAM, Byung Yul MOON, Eung Yul KIM, Jae Hwan KIM, Chun Ho SHIN, Kwang Hun PARK, Myun Gu CHOI, Chang Hwang CHOI, Yong Geol KIM, Jae Min JEON
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Publication number: 20240014251Abstract: Disclosed is a capacitor having a high dielectric constant and low leakage current and a method for fabricating the same, wherein the capacitor may include a first conductive layer, a second conductive layer, a dielectric layer stack between the first conductive layer and the second conductive layer, a dielectric interface layer between the dielectric layer stack and the second conductive layer, and a high work function interface layer between the dielectric interface layer and the second conductive layer.Type: ApplicationFiled: September 21, 2023Publication date: January 11, 2024Inventors: Myung-Soo LEE, Cheol-Hwan PARK, Chee-Hong AN
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Patent number: 11791374Abstract: Disclosed is a capacitor having a high dielectric constant and low leakage current and a method for fabricating the same, wherein the capacitor may include a first conductive layer, a second conductive layer, a dielectric layer stack between the first conductive layer and the second conductive layer, a dielectric interface layer between the dielectric layer stack and the second conductive layer, and a high work function interface layer between the dielectric interface layer and the second conductive layer.Type: GrantFiled: January 3, 2022Date of Patent: October 17, 2023Assignee: SK hynix Inc.Inventors: Myung-Soo Lee, Cheol-Hwan Park, Chee-Hong An
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Publication number: 20230215910Abstract: A semiconductor device includes a lower electrode; a supporter supporting an outer wall of the lower electrode; a dielectric layer formed on the lower electrode and the supporter; an upper electrode on the dielectric layer; a first interfacial layer disposed between the lower electrode and the dielectric layer and selectively formed on a surface of the lower electrode among the lower electrode and the supporter; and a second interfacial layer disposed between the dielectric layer and the upper electrode, wherein the first interfacial layer is a stack of a metal oxide contacting the lower electrode and a metal nitride contacting the dielectric layer.Type: ApplicationFiled: July 5, 2022Publication date: July 6, 2023Inventors: Jae Hee SONG, Dong Hyun LEE, Kyung Woong PARK, Cheol Hwan PARK, Ki Vin IM
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Publication number: 20220130947Abstract: Disclosed is a capacitor having a high dielectric constant and low leakage current and a method for fabricating the same, wherein the capacitor may include a first conductive layer, a second conductive layer, a dielectric layer stack between the first conductive layer and the second conductive layer, a dielectric interface layer between the dielectric layer stack and the second conductive layer, and a high work function interface layer between the dielectric interface layer and the second conductive layer.Type: ApplicationFiled: January 3, 2022Publication date: April 28, 2022Inventors: Myung-Soo LEE, Cheol-Hwan PARK, Chee-Hong AN
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Patent number: 11251260Abstract: Disclosed is a capacitor having a high dielectric constant and low leakage current and a method for fabricating the same wherein the capacitor may include a first conductive layer a second conductive layer, a dielectric layer stack between the first conductive layer and the second conductive layer, a dielectric interface layer between the dielectric layer stack and the second conductive layer, and a high work function interface layer between the dielectric interface layer and the second conductive layer.Type: GrantFiled: March 20, 2020Date of Patent: February 15, 2022Assignee: SK hynix Inc.Inventors: Myung-Soo Lee, Cheol-Hwan Park, Chee-Hong An
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Publication number: 20210310722Abstract: A refrigerator is disclosed. The refrigerator includes a main body including a storage compartment, a plurality of storage containers installed in the storage compartment and positioned side by side from left to right, a support plate installed between the plurality of storage containers, a cover covering opened upper surfaces of the plurality of storage containers, a sliding shelf slidably installed on the cover, and a shelf support positioned at an upper surface of the support plate. The refrigerator can prevent deformation due to sagging of the sliding shelf even if items with large size and weight are placed on the sliding shelf, and smoothly achieve a sliding operation of the shelf.Type: ApplicationFiled: April 6, 2021Publication date: October 7, 2021Applicant: WINIA ELECTRONICS CO., LTD.Inventors: Cheol Hwan PARK, Keun Woo HWANG
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Publication number: 20210066446Abstract: Disclosed is a capacitor having a high dielectric constant and low leakage current and a method for fabricating the same wherein the capacitor may include a first conductive layer a second conductive layer, a dielectric layer stack between the first conductive layer and the second conductive layer, a dielectric interface layer between the dielectric layer stack and the second conductive layer, and a high work function interface layer between the dielectric interface layer and the second conductive layer.Type: ApplicationFiled: March 20, 2020Publication date: March 4, 2021Inventors: Myung-Soo LEE, Cheol-Hwan PARK, Chee-Hong AN
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Publication number: 20200025437Abstract: A foldable door for a refrigerator appliance comprises: a first door hingedly connected to one end of a refrigerator body and configured to open and close one open surface of the refrigerator body; a second door foldably connected to the first door so as to open and close the other open surface of the refrigerator body; and a locking unit configured to selectively fold or affix the first door with respect to the second door. A fixing unit is configured to fix the locking unit against movement thereof, wherein the fixing unit comprises: a fixing portion disposed on the reinforcing bar; and an electromagnetic portion configured to generate an electromagnetic attraction force acting on the fixing portion when electric power is applied to the electromagnetic portion.Type: ApplicationFiled: December 13, 2018Publication date: January 23, 2020Inventor: Cheol Hwan PARK
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Patent number: 9362421Abstract: In a semiconductor device, a support wall is formed between storage nodes to more effectively prevent leaning of a capacitor, and the storage nodes are formed using a damascene process, which may increase a contact area between each storage node and a storage node contact.Type: GrantFiled: November 16, 2012Date of Patent: June 7, 2016Assignee: SK HYNIX INC.Inventors: Cheol Hwan Park, Dong Sauk Kim
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Patent number: 9142634Abstract: One or more embodiments relate generally to the field of photoelectron spin and, more specifically, to a method and system for creating a controllable spin-polarized electron source. One preferred embodiment of the invention generally comprises: method for creating a controllable spin-polarized electron source comprising the following steps: providing one or more materials, the one or more materials having at least one surface and a material layer adjacent to said surface, wherein said surface comprises highly spin-polarized surface electrons, wherein the direction and spin of the surface electrons are locked together; providing at least one incident light capable of stimulating photoemission of said surface electrons; wherein the photon polarization of said incident light is tunable; and inducing photoemission of the surface electron states.Type: GrantFiled: February 20, 2014Date of Patent: September 22, 2015Inventors: Chris Jozwiak, Cheol-Hwan Park, Kenneth Gotlieb, Steven G Louie, Zahid Hussain, Alessandra Lanzara
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Publication number: 20150235799Abstract: One or more embodiments relate generally to the field of photoelectron spin and, more specifically, to a method and system for creating a controllable spin-polarized electron source. One preferred embodiment of the invention generally comprises: method for creating a controllable spin-polarized electron source comprising the following steps: providing one or more materials, the one or more materials having at least one surface and a material layer adjacent to said surface, wherein said surface comprises highly spin-polarized surface electrons, wherein the direction and spin of the surface electrons are locked together; providing at least one incident light capable of stimulating photoemission of said surface electrons; wherein the photon polarization of said incident light is tunable; and inducing photoemission of the surface electron states.Type: ApplicationFiled: February 20, 2014Publication date: August 20, 2015Inventors: Chris Jozwiak, Cheol Hwan Park, Kenneth Gotlieb, Steven Gwon Sheng Louie, Zahid Hussain, Alessandra Lanzara
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Patent number: 8476688Abstract: A semiconductor device that prevents the leaning of storage node when forming a capacitor having high capacitance includes a plurality of cylinder-shaped storage nodes formed over a semiconductor substrate; and support patterns formed to fix the storage nodes in the form of an ‘L’ or a ‘+’ when viewed from the top. This semiconductor device having support patterns in the form of an ‘L’ or a ‘+’ reduces stress on the storage nodes when subsequently forming a dielectric layer and plate nodes that prevents the capacitors from leaking.Type: GrantFiled: October 2, 2008Date of Patent: July 2, 2013Assignee: Hynix Semiconductor Inc.Inventors: Ho Jin Cho, Cheol Hwan Park, Jae Wook Seo, Jong Kuk Kim
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Patent number: 8470668Abstract: An embodiment of the invention includes a pillar type capacitor where a pillar is formed over an upper portion of a storage node contact. A bottom electrode is formed over sidewalls of the pillar, and a dielectric film is formed over pillar and the bottom electrode. A top electrode is then formed over the upper portion of the dielectric film.Type: GrantFiled: December 28, 2010Date of Patent: June 25, 2013Assignee: SK Hynix Inc.Inventors: Ho Jin Cho, Cheol Hwan Park, Dong Kyun Lee
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Publication number: 20120098132Abstract: A semiconductor device with a stable structure having high capacitance by changing the pillar type storage node structure and a method of manufacturing the same are provided. The method includes forming a sacrificial layer on a semiconductor substrate including a storage node contact plug, etching the sacrificial layer to form a region exposing the storage node contact plug, forming a first conductive material within an inner side of the region, burying a second conductive material within the region in which the first conductive material is formed, and removing the sacrificial layer to form a pillar type storage node.Type: ApplicationFiled: October 24, 2011Publication date: April 26, 2012Applicant: Hynix Semiconductor Inc.Inventors: Cheol Hwan PARK, Ho Jin Cho, Dong Kyun Lee
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Patent number: 8148764Abstract: A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conducive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.Type: GrantFiled: July 19, 2011Date of Patent: April 3, 2012Assignee: Hynix Semiconductor Inc.Inventors: Cheol Hwan Park, Ho Jin Cho, Dong Kyun Lee
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Publication number: 20120019980Abstract: An embodiment of the invention includes a pillar type capacitor where a pillar is formed over an upper portion of a storage node contact. A bottom electrode is formed over sidewalls of the pillar, and a dielectric film is formed over pillar and the bottom electrode. A top electrode is then formed over the upper portion of the dielectric film.Type: ApplicationFiled: December 28, 2010Publication date: January 26, 2012Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Ho Jin CHO, Cheol Hwan PARK, Dong Kyun LEE
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Publication number: 20110272784Abstract: A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conducive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.Type: ApplicationFiled: July 19, 2011Publication date: November 10, 2011Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Cheol Hwan PARK, Ho Jin CHO, Dong Kyun LEE
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Patent number: 7985645Abstract: A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conductive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.Type: GrantFiled: December 30, 2009Date of Patent: July 26, 2011Assignee: Hynix Semiconductor Inc.Inventors: Cheol Hwan Park, Ho Jin Cho, Dong Kyun Lee