Abstract: The present disclosure relates to an energy transferring type photoelectrode including a substrate; a photoactive layer formed on the substrate; and a catalyst layer formed on the photoactive layer, in which an emission spectrum region of the photoactive layer and an absorption spectrum region of the catalyst layer overlap.

Abstract: Disclosed herein is a semiconductor device, including: a substrate; and a superlattice thin film formed on the substrate, wherein the superlattice thin film is configured such that insulator layers and semiconductor layers are alternately laminated on the substrate. The superlattice thin film is characterized in that, since it is formed by the lamination of a semiconductor layer and an insulator layer, the semiconductor layer and insulator layer constituting the superlattice thin film may be composed of a crystalline material, an amorphous material or a mixture thereof, and thus various kinds of materials for solving the mismatch in lattice constant between conventional superlattices made of different kinds of semiconductor materials can be used without limitations.