Patents by Inventor Cheol Jin Cho

Cheol Jin Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CAPACITOR STRUCTURE, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE STRUCTURE, AND METHOD FOR MANUFACTURING THE STRUCTURE
    Publication number: 20230402500
    Abstract: A capacitor structure includes lower and electrodes, and a capacitor dielectric film interposed therebetween. The lower electrode includes a lower electrode film including a first metal element, a first doped oxide film including a second metal element and an oxide of the first metal element, and a first metal oxide film. The first metal oxide film includes an oxide of the first metal element and is free of the second metal element. The upper electrode includes an upper electrode film including the first metal element, a second doped oxide film including the second metal element and an oxide of the first metal element, and a second metal oxide film that includes an oxide of the first metal element, and is free of the second metal element.
    Type: Application
    Filed: February 8, 2023
    Publication date: December 14, 2023
    Inventors: Cheol Jin CHO, Young-Lim PARK, Kyoo Ho JUNG
  • SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME
    Publication number: 20220238641
    Abstract: Semiconductor devices are provided. The semiconductor devices includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, a capacitor dielectric film that is on the lower electrode and includes both a tetragonal crystal system and an orthorhombic crystal system, a first doping layer that is between the lower electrode and the capacitor dielectric film and includes a first metal, and an upper electrode on the capacitor dielectric film.
    Type: Application
    Filed: August 26, 2021
    Publication date: July 28, 2022
    Inventors: Jung Min Park, Han Jin Lim, Kyoo Ho Jung, Cheol Jin Cho
  • CAPACITOR FOR SEMICONDUCTOR MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20180247941
    Abstract: A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Ir).
    Type: Application
    Filed: July 13, 2017
    Publication date: August 30, 2018
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Seong Keun KIM, Jung Joon PYEON, Cheol Jin CHO, Sangtae KIM, Doo Seok JEONG, Seung-Hyub BAEK, Chong-Yun KANG, Ji-Won CHOI, Jin-Sang KIM
  • Capacitor for semiconductor memory element and method for manufacturing the same
    Patent number: 10062699
    Abstract: A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Jr).
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: August 28, 2018
    Assignee: Korea Institute of Science and Technology
    Inventors: Seong Keun Kim, Jung Joon Pyeon, Cheol Jin Cho, Sangtae Kim, Doo Seok Jeong, Seung-Hyub Baek, Chong-Yun Kang, Ji-Won Choi, Jin-Sang Kim