Patents by Inventor Cheol Kyun Lee

Cheol Kyun Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10136481
    Abstract: The present invention relates to a lighting lamp system and a power distributor used for the lighting lamp system. The lighting lamp system comprising: a plurality of lighting lamps; a main converter for converting external alternating-current power into direct-current power; a distributor provided to be isolated from the lighting lamps and supplying power for lighting to the plurality of lighting lamps by converting the direct-current power from the main converter; and a controller for controlling the operations of the lighting lamps by controlling the distributor.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: November 20, 2018
    Assignees: DNCI CO., LTD., TALBOT SOLUTIONS, LLC
    Inventors: Dong-mook Won, Cheol-Kyun Lee, Myung-Ki You, Yunsil Park
  • Publication number: 20160157307
    Abstract: The present invention relates to a lighting lamp system and a power distributor used for the lighting lamp system. The lighting lamp system comprising: a plurality of lighting lamps; a main converter for converting external alternating-current power into direct-current power; a distributor provided to be isolated from the lighting lamps and supplying power for lighting to the plurality of lighting lamps by converting the direct-current power from the main converter; and a controller for controlling the operations of the lighting lamps by controlling the distributor.
    Type: Application
    Filed: June 23, 2014
    Publication date: June 2, 2016
    Inventors: Dong-mook WON, Cheol-Kyun Lee, Myung-Ki YOU, Yun-Sil PARK
  • Publication number: 20070064757
    Abstract: Provided is an avalanche quantum intersubband transition semiconductor laser. The laser includes: a first cladding layer, a first wave guide layer, an active region, a second wave guide layer, and a second cladding layer formed on a semiconductor substrate, wherein the active region consists of multiple stacks (periods) of a unit-cell structure, which is comprised of a carrier-multiplication layer structure for multiplying carriers, a carrier guide layer structure, and an QW active region to which carriers are injected, wherein intersubband optical radiative transitions of the carriers occur. Here, the carriers multiplied while passing though the carrier-multiplication layer structure, and injected into a optical transition level of the QW active region can achieve the high population inversion effectively, thereby high laser output power can be obtained with less stacked compact structure.
    Type: Application
    Filed: July 26, 2006
    Publication date: March 22, 2007
    Inventors: Gyung Ock Kim, In Gyoo Kim, Ki Joong Lee, Cheol Kyun Lee