Abstract: An ammonia stripping device, and a resource recovery type high concentration wastewater treatment system using the ammonia stripping device are disclosed. The ammonia stripping device optimizes the conditions of pH, temperature, and pressure within a decompression type reactor with respect to raw water. Stripped ammonia is to be highly purified in a gas phase without phase change by a separation membrane process of causing the stripped ammonia to pass through a gas separation membrane, and selectively recovering the recovered ammonia. The recovered ammonia of high purity can be made into resources such as production of urea solutions, power generation by raw materials of green hydrogen and mixed fuel, and so on.

Abstract: Provided is an ammonia stripping device, and a resource recovery type high concentration wastewater treatment system using the ammonia stripping device. The ammonia stripping device optimizes the conditions of pH, temperature, and pressure within a decompression type reactor with respect to raw water resulting from gathering high concentration wastewater and removing a solid therefrom and causes the stripped ammonia to be highly purified in a gas phase without phase change by a separation membrane process of causing the stripped ammonia to pass through a gas separation membrane, and selectively recovering the recovered ammonia. The recovered ammonia of high purity can be reused in being made into resources such as production of urea solutions, power generation by raw materials of green hydrogen and mixed fuel, and so on.

Abstract: Provided is an airflow control system and airflow control method capable of preventing the inflow of foreign, the airflow control system including at least one grating panel mounted on a floor of a clean room and including a plurality of through holes, a semiconductor manufacturing equipment spaced apart from the grating panel by a gap space by using supports or legs, and including a fan mounted toward the grating panel, and a negative pressure preventer for preventing a negative pressure locally formed in the gap space due to a pressure difference between an outer downward airflow flowing along sides of the semiconductor manufacturing equipment and expelled to an outside through the through holes of the grating panel, and an inner downward airflow flowing from the semiconductor manufacturing equipment to the grating panel by the fan and expelled to the outside through the through holes of the grating panel.

Abstract: A metal junction thermoelectric device includes at least one thermoelectric element. The thermoelectric element has first and second opposite sides, and a first conductor made from a first metal, and a second conductor made from a second metal. The first and second conductors are electrically interconnected in series, and the first and second conductors are arranged to conduct heat in parallel between the first and second sides. The first metal has a first occupancy state, and the second metal has a second occupancy state that is lower than the first occupancy state. A temperature difference between the first and second sides of the thermoelectric element causes a charge potential due to the difference in occupancy states of the first and second metals. The charge potential generates electrical power.

Abstract: A metal junction thermoelectric device includes at least one thermoelectric element. The thermoelectric element has first and second opposite sides, and a first conductor made from a first metal, and a second conductor made from a second metal. The first and second conductors are electrically interconnected in series, and the first and second conductors are arranged to conduct heat in parallel between the first and second sides. The first metal has a first occupancy state, and the second metal has a second occupancy state that is lower than the first occupancy state. A temperature difference between the first and second sides of the thermoelectric element causes a charge potential due to the difference in occupancy states of the first and second metals. The charge potential generates electrical power.

Abstract: A metal junction thermoelectric device includes at least one thermoelectric element. The thermoelectric element has first and second opposite sides, and a first conductor made from a first metal, and a second conductor made from a second metal. The first and second conductors are electrically interconnected in series, and the first and second conductors are arranged to conduct heat in parallel between the first and second sides. The first metal has a first occupancy state, and the second metal has a second occupancy state that is lower than the first occupancy state. A temperature difference between the first and second sides of the thermoelectric element causes a charge potential due to the difference in occupancy states of the first and second metals. The charge potential generates electrical power.

Abstract: A lightweight flexible BNNT mat or fabric provides improved thermal stability and shielding capabilities under a hypersonic thermal flux. The BNNT mat reduces the stagnation temperature and maintains a low regression rate. An in-situ passivation layer may be formed on the BNNT mat or fabric under high thermal flux. The passivation layer minimizes or prevents penetration of the atmosphere (air or gas) as well as heat and radiation through the thickness of the BNNT material, and it effectively diffuses heat throughout the mat or fabric laterally and radially to minimize localized excessive heat. A BNNT mat according to the present disclosure may also efficiently transfer heat from the BNNT material via radiation due to the high thermal emissivity (0.92) of the BNNT material.

Abstract: The invention consists of radiation shielding materials for shielding in the most structurally robust combination against galactic cosmic radiation (GCR), neutrons, and solar energetic particles (SEP). Materials for vehicles, space structures, habitats, landers, rovers, and spacesuits must possess functional characteristics of radiation shielding, thermal protection, pressure resistance, and mechanical durability. The materials are tailored to offer the greatest shielding against GCR, neutrons, and SEP in the most structurally robust combination, also capable of shielding against micrometeoriod impact. The boron nitride nanotube (BNNT) is composed entirely of low Z atoms (boron and nitrogen).

Abstract: Formation of a boron nitride nanotube nanocomposite film by combining a boron nitride nanotube solution with a matrix such as a polymer or a ceramic to form a boron nitride nanotube/polyimide mixture and synthesizing a boron nitride nanotube/polyimide nanocomposite film as an electroactive layer.

Abstract: A novel radiation hardened chip package technology protects microelectronic chips and systems in aviation/space or terrestrial devices against high energy radiation. The proposed technology of a radiation hardened chip package using rare earth elements and mulitlayered structure provides protection against radiation bombardment from alpha and beta particles to neutrons and high energy electromagnetic radiation.

Abstract: Disclosed is a single wall carbon nanotube (SWCNT) film electrode (FE), all-organic electroactive device systems fabricated with the SWNT-FE, and methods for making same. The SWCNT can be replaced by other types of nanotubes. The SWCNT film can be obtained by filtering SWCNT solution onto the surface of an anodized alumina membrane. A freestanding flexible SWCNT film can be collected by breaking up this brittle membrane. The conductivity of this SWCNT film can advantageously be higher than 280 S/cm. An electroactive polymer (EAP) actuator layered with the SWNT-FE shows a higher electric field-induced strain than an EAP layered with metal electrodes because the flexible SWNT-FE relieves the restraint of the displacement of the polymeric active layer as compared to the metal electrode. In addition, if thin enough, the SWNT-FE is transparent in the visible light range, thus making it suitable for use in actuators used in optical devices.

Abstract: Nanotube filaments comprising carbon, boron and nitrogen of the general formula BxCyNz, having high-aspect ratio and high-crystallinity produced by a pressurized vapor/condenser method and a process of production. The process comprises thermally exciting a boron-containing target in a chamber containing a carbon source and nitrogen at a pressure which is elevated above atmospheric pressure.

Abstract: Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nontubes (CNTs), graphites, or their combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mates of BNNTs are uses as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also uses as reinforcing inclusions combining with other polymer matrices to create composite layer like typical reinforcing fibers such as Kevlar®, Spectra®, ceramics and metals. Enhanced wear resistance and prolonged usage time, even under harsh conditions, are achieved by adding boron nitride nanomaterials because both hardness and toughness are increased. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800° C. in air.

Abstract: A lightweight flexible BNNT mat or fabric provides improved thermal stability and shielding capabilities under a hypersonic thermal flux. The BNNT mat reduces the stagnation temperature and maintains a low regression rate. An in-situ passivation layer may be formed on the BNNT mat or fabric under high thermal flux. The passivation layer minimizes or prevents penetration of the atmosphere (air or gas) as well as heat and radiation through the thickness of the BNNT material, and it effectively diffuses heat throughout the mat or fabric laterally and radially to minimize localized excessive heat. A BNNT mat according to the present disclosure may also efficiently transfer heat from the BNNT material via radiation due to the high thermal emissivity (0.92) of the BNNT material.

Abstract: Some implementations provide a device (e.g., solar panel) that includes an active layer and a solar absorbance layer. The active layer includes a first N-type layer and a first P-type layer. The solar absorbance layer is coupled to a first surface of the active layer. The solar absorbance layer includes a polymer composite. In some implementations, the polymer composite includes one of at least metal salts and/or carbon nanotubes. In some implementations, the active layer is configured to provide the photovoltaic effect. In some implementations, the active layer further includes a second N-type layer and a second P-type layer. In some implementations, the active layer is configured to provide the thermoelectric effect. In some implementations, the device further includes a cooling layer coupled to a second surface of the active layer. In some implementations, the cooling layer includes one of at least zinc oxides, indium oxides, and/or carbon nanotubes.

Abstract: Multifunctional Boron Nitride nanotube-Boron Nitride (BN—BN) nanocomposites for energy transducers, thermal conductors, anti-penetrator/wear resistance coatings, and radiation hardened materials for harsh environments. An all boron-nitride structured BN—BN composite is synthesized. A boron nitride containing precursor is synthesized, then mixed with boron nitride nanotubes (BNNTs) to produce a composite solution which is used to make green bodies of different forms including, for example, fibers, mats, films, and plates. The green bodies are pyrolized to facilitate transformation into BN—BN composite ceramics. The pyrolysis temperature, pressure, atmosphere and time are controlled to produce a desired BN crystalline structure. The wholly BN structured materials exhibit excellent thermal stability, high thermal conductivity, piezoelectricity as well as enhanced toughness, hardness, and radiation shielding properties.

Abstract: A mechanically robust, binder-free, inexpensive target for laser synthesis of carbon nanotubes and a method for making same, comprising the steps of mixing prismatic edge natural flake graphite with a metal powder catalyst and pressing the graphite and metal powder mixture into a mold having a desired target shape.

Abstract: A metal junction thermoelectric device includes at least one thermoelectric element. The thermoelectric element has first and second opposite sides, and a first conductor made from a first metal, and a second conductor made from a second metal. The first and second conductors are electrically interconnected in series, and the first and second conductors are arranged to conduct heat in parallel between the first and second sides. The first metal has a first occupancy state, and the second metal has a second occupancy state that is lower than the first occupancy state. A temperature difference between the first and second sides of the thermoelectric element causes a charge potential due to the difference in occupancy states of the first and second metals. The charge potential generates electrical power.

Abstract: An electric and steam system includes an electrical generator assembly configured to receive a first portion of a flow of a boil off gas (NBOG). An oxidizing unit is configured to receive a second portion of the flow of the boil off gas (NBOG), the second portion being an excess of the flow of the boil off gas (NBOG) that the electrical generator can process, and a crossover duct configured to receive a first flow of exhaust gas from the electrical generator assembly and a second flow of exhaust gas from the oxidizing unit and channel the first and second flows to an inlet of a heat recovery steam generator.

Abstract: Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly (benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.