Abstract: A polyimide precursor monomer having an E value of 2.0 or more calculated by Equation 1 is selected among polyimide raw materials. A polyimide includes a structural unit derived from the polyimide precursor monomer having the E value of 2.0 or more. Optical properties of a polyimide film formed from the polyimide can be improved, and the optical properties of a polyimide film can be predicted from the E value of the polyimide precursor monomer even before production of the polyimide film.

Abstract: Provided are a separator coating composition for a secondary battery including inorganic particles and a silane salt compound having a specific structure, a separator using the same, and an electrochemical device including the same. Specifically, a separator coating composition for a secondary battery which implements adhesion between an inorganic material layer and a porous substrate without including an acid/polymer-based organic binder in a coating composition for forming the inorganic material layer on one or both surfaces of the porous substrate and does not need a separate dispersing agent for dispersing the inorganic particles, a separator manufactured using the same, and an electrochemical device including the separator are provided.

Abstract: A method of accessing an integrated circuit memory device can include reading from an address in a first memory sub-block during a first clock cycle. The address of a first data memory block address mapped to the first memory sub-block can be written to during the first clock cycle. The address of a second data memory block address mapped can be written to the second memory sub-block during a second clock cycle immediately subsequent in time to the first clock cycle. Related device are disclosed.

Abstract: A method of accessing an integrated circuit memory device can include reading from an address in a first memory sub-block during a first clock cycle. The address of a first data memory block address mapped to the first memory sub-block can be written to during the first clock cycle. The address of a second data memory block address mapped can be written to the second memory sub-block during a second clock cycle immediately subsequent in time to the first clock cycle. Related device are disclosed.