Patents by Inventor Cheol-sung Hwang

Cheol-sung Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Three-layer lower capacitor electrode
    Patent number: 7256442
    Abstract: A method for forming the lower electrode of a capacitor used for fabricating a 1-Gbit or above DRAM, using a material having a high dielectric constant, is used in a method for manufacturing a storage capacitor of a VLSI semiconductor device. The lower electrode, which is to be in contact with a high dielectric film, is formed to have a triple-structured storage node pattern. The lowest layer of the lower electrode is formed with TiN which serves as a barrier against the diffusion of impurities from a lower substrate. The middle layer of the lower electrode is formed with RuO2 which is easy to pattern. The uppermost layer of the lower electrode is formed with Pt which has excellent leakage current properties.
    Type: Grant
    Filed: March 12, 1997
    Date of Patent: August 14, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Cheol-sung Hwang
  • Method for forming lower electrode of capacitor
    Patent number: 5824563
    Abstract: A method for forming the lower electrode of a capacitor used for fabricating a 1-Gbit or above DRAM, using a material having a high dielectric constant, is used in a method for manufacturing a storage capacitor of a VLSI semiconductor device. The lower electrode, which is to be in contact with a high dielectric film, is formed to have a triple-structured storage node pattern. The lowest layer of the lower electrode is formed with TiN which serves as a barrier against the diffusion of impurities from a lower substrate. The middle layer of the lower electrode is formed with RuO.sub.2 which is easy to pattern. The uppermost layer of the lower electrode is formed with Pt which has excellent leakage current properties.
    Type: Grant
    Filed: November 17, 1995
    Date of Patent: October 20, 1998
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Cheol-sung Hwang