Abstract: A capacitively coupled plasma substrate processing apparatus includes: a process chamber which is exhausted to vacuum and provides a sealed internal space; a gas inflow pipe which is connected to the process chamber to provide a process gas into the process chamber; a gas distribution unit which is connected to the gas inflow pipe to inject the process gas flowing into the gas inflow pipe in the internal space; an impedance matching network which is disposed outside the process chamber and transfers an RF power of an RF power supply to the gas distribution unit; an RF connection line which connects an output of the impedance matching network to the gas inflow pipe or the gas distribution unit; and a shielding plate which is configured such that at least one of the RF connection line and the gas inflow pipe penetrates the shielding plate and includes a ferromagnetic material.

Abstract: A capacitively coupled plasma substrate processing apparatus includes: a process chamber which is exhausted to vacuum and provides a sealed internal space; a gas inflow pipe which is connected to the process chamber to provide a process gas into the process chamber; a gas distribution unit which is connected to the gas inflow pipe to inject the process gas flowing into the gas inflow pipe in the internal space; an impedance matching network which is disposed outside the process chamber and transfers an RF power of an RF power supply to the gas distribution unit; an RF connection line which connects an output of the impedance matching network to the gas inflow pipe or the gas distribution unit; and a shielding plate which is configured such that at least one of the RF connection line and the gas inflow pipe penetrates the shielding plate and includes a ferromagnetic material.

Abstract: The present invention relates to a gas supply device and, more specifically, to a gas supply device which can improve the flow of process gas within a process chamber and can increase a degree of uniformity of a deposition layer. The gas supply device, according to the present invention, comprises: a lead having a gas pipe connected thereto; a first plate for discharging, to a process chamber, gas introduced into the lead; a second plate provided so as to disperse gas flowing towards the bottom by being arranged between the lead and the first plate; a plurality of discharge holes on the first plate; and a plurality of discharge holes formed on the second plate, wherein a discharge hole formed at a corner section of the second plate is arranged in a different state from that of a discharge hole of a corner section formed at the same position on the first plate.