Abstract: Disclosed is a method for measuring a low-k material. A surface of the low-k material is changed into oxide by an oxygen plasma used in an ashing process (e.g., to remove a photoresist film after an etching process). A thickness of the low-k material is measured using an optical measurement system, and then the low-k material is treated with plasma in an ashing process to change the surface of the low-k material into oxide. The substrate is wet-cleaned with an inorganic or organic cleaning solution after the ashing process to remove the surface oxide. Then, a subsequent thickness of the low-k material is measured using the optical measurement system, and a thickness of the oxide is calculated by comparing the measured values. The thickness of a damaged low-k material is thereby measured in an easy and rapid manner since optical measurement system typically installed in the semiconductor fabrication facility (fab) is utilized.

Abstract: The present invention relates to a method of fabricating an image sensor wherein it can enhance adhesive strength between an USG layer and a SiN layer. The method of fabricating the image sensor according to the present invention includes patterning a metal pad on a circuit region of a substrate; forming an Undoped Silicate Glass (USG) film on the substrate to cover the metal pad; plasma treating a surface of the USG film; forming a silicon nitride (SiN) film on the USG film; selectively etching the SiN layer and the USG layer to expose the metal pad; and forming a color filter array and a microlens on the SiN film in a photosensitive element region of the substrate. In accordance with the method, an adhesive strength between the USG film and the SiN film can be enhanced. It is therefore possible to reduce or prevent the peeling phenomenon in which the SiN film peels off from the USG film.

Abstract: A method of forming a metal wiring in a semiconductor device includes forming a lower wiring layer, forming an etch stopping film and an interlayer insulation film, forming a photo-resist pattern, forming a via-hole using the photo-resist pattern as a mask, ashing the photo-resist pattern, cleaning the via-hole, etching a portion of the etch stopping film exposed through the via-hole to expose the lower wiring layer, and burying a metallic material in the via-hole to provide a via-contact. Photo-resist residues or particles that remain after the ashing process can be perfectly removed or substantially perfectly removed through a cleaning process to open a lower metal wiring layer. It is possible to prevent the upper and lower metal wiring layers from inappropriately making contact with each other because the lower metal wiring layer is perfectly opened due to the absence of photo-resist residues.

Abstract: Disclosed is a method for fabricating an Al metal line. The method includes forming an insulating layer on a semiconductor substrate; forming a Ti layer, a bottom TiN layer, an Al layer and a top TiN layer in successive order on the insulating layer; plasma-treating the top TiN layer; forming a photoresist pattern on the plasma-treated top TiN layer; and etching the plasma-treated top TiN layer, the Al layer, the bottom TiN layer, and the Ti layer using the photoresist pattern as an etching mask, thereby forming the Al metal line.