Abstract: Disclosed is a semiconductor device including a low voltage device located on a first substrate and driven with a first level voltage, and a high voltage device located on a second substrate, driven with a second level voltage higher than the first level voltage, and coupled to the low voltage device, wherein the low voltage device includes a FinFET, wherein the high voltage device includes a planar FET.

Abstract: Semiconductor memory devices and methods for writing data in memory cells are provided. An exemplary method for writing data in a memory cell includes providing the memory cell with a first pull-up transistor, a first power supply line coupled to the first pull-up transistor, a second pull-up transistor, and a second power supply line coupled to the second pull-up transistor. The method further includes applying a primary voltage from the first power supply line to the first pull-up transistor. The method also includes applying a secondary voltage from the second power supply line to the second pull-up transistor, wherein the secondary voltage is higher than the primary voltage. Further, the method includes performing a write operation to save a selected value in the memory cell.

Abstract: Semiconductor memory devices and methods for writing data in memory cells are provided. An exemplary method for writing data in a memory cell includes providing the memory cell with a first pull-up transistor, a first power supply line coupled to the first pull-up transistor, a second pull-up transistor, and a second power supply line coupled to the second pull-up transistor. The method further includes applying a primary voltage from the first power supply line to the first pull-up transistor. The method also includes applying a secondary voltage from the second power supply line to the second pull-up transistor, wherein the secondary voltage is higher than the primary voltage. Further, the method includes performing a write operation to save a selected value in the memory cell.

Abstract: A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate, monitoring processes of forming the first and second transistors to find an error and performing an additional ion implantation process to form a low-concentration dopant region or a halo region on the first transistor or the second transistor corresponding to a found error.

Abstract: A semiconductor device includes a semiconductor substrate including a first region and a second region, a first high-k dielectric film pattern on the first region, a second high-k dielectric film pattern on the second region and having the same thickness as the first high-k dielectric film pattern. First and second work function control film patterns are positioned on the high-k dielectric film patterns of the first region. Third and fourth work function control patterns are positioned on the high-k dielectric film pattern of the second region, the first work function control pattern being thicker than the third work function control pattern and the fourth work function control pattern being thicker than the second.

Abstract: A co-implant concentration of a source region of a pull-down transistor is higher than those of other co-implant concentrations. Thus, dopants in a halo region of the source region may be prevented from excessively being diffused into a channel region during a post annealing process. As a result, dispersion of saturation threshold voltages of unit memory cells may be reduced.

Abstract: There is provided a semiconductor device comprising, at least one SRAM cell, wherein the SRAM cell includes a pull-up transistor, a pull-down transistor, and a pass-gate transistor, and an inversion-layer thickness (Tinv) of a gate stack of the pass-gate transistor is different from Tinv of a gate stack of the pull-up transistor and Tinv of a gate stack of the pull-down transistor.

Abstract: A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate, monitoring processes of forming the first and second transistors to find an error and performing an additional ion implantation process to form a low-concentration dopant region or a halo region on the first transistor or the second transistor corresponding to a found error.

Abstract: There is provided a semiconductor device comprising, at least one SRAM cell, wherein the SRAM cell includes a pull-up transistor, a pull-down transistor, and a pass-gate transistor, and an inversion-layer thickness (Tinv) of a gate stack of the pass-gate transistor is different from Tinv of a gate stack of the pull-up transistor and Tinv of a gate stack of the pull-down transistor.

Abstract: A semiconductor device includes a semiconductor substrate including a first region and a second region, a first high-k dielectric film pattern on the first region, a second high-k dielectric film pattern on the second region and having the same thickness as the first high-k dielectric film pattern. First and second work function control film patterns are positioned on the high-k dielectric film patterns of the first region. Third and fourth work function control patterns are positioned on the high-k dielectric film pattern of the second region, the first work function control pattern being thicker than the third work function control pattern and the fourth work function control pattern being thicker than the second.

Abstract: Void boundary structures, semiconductor devices having the void boundary structures, and methods of forming the same are provided. The structures, semiconductor devices and methods present a way for reducing parasitic capacitance between interconnections by forming a void between the interconnections. The interconnections may be formed on a semiconductor substrate. An upper width of each of the interconnections may be wider than a lower width thereof. A molding layer encompassing the interconnections may be formed. A void boundary layer covering the molding layer may be formed to define the void between the interconnections.

Abstract: Void boundary structures, semiconductor devices having the void boundary structures, and methods of forming the same are provided. The structures, semiconductor devices and methods present a way for reducing parasitic capacitance between interconnections by forming a void between the interconnections. The interconnections may be formed on a semiconductor substrate. An upper width of each of the interconnections may be wider than a lower width thereof. A molding layer encompassing the interconnections may be formed. A void boundary layer covering the molding layer may be formed to define the void between the interconnections.

Abstract: Void boundary structures, semiconductor devices having the void boundary structures, and methods of forming the same are provided. The structures, semiconductor devices and methods present a way for reducing parasitic capacitance between interconnections by forming a void between the interconnections. The interconnections may be formed on a semiconductor substrate. An upper width of each of the interconnections may be wider than a lower width thereof. A molding layer encompassing the interconnections may be formed. A void boundary layer covering the molding layer may be formed to define the void between the interconnections.

Abstract: Provided is a metal-oxide semiconductor (MOS) transistor containing a metal gate pattern. The semiconductor device includes a p-channel metal-oxide semiconductor (PMOS) transistor including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a first metal gate conductive film formed on the first insulating film, and a nitrogen diffusion blocking film formed between the first insulating film and the first metal gate conductive film, and an n-channel metal-oxide semiconductor (NMOS) transistor including the semiconductor substrate, a second insulating film formed on the semiconductor substrate, a second metal gate conductive film formed on the second insulating film, and a reaction blocking film formed of metal nitride and formed between the second insulating film and the second metal gate conductive film. According to the inventive concept, a reaction between a metal gate film and an insulating film may be minimized so as to result in a highly reliable MOS transistor.

Abstract: Void boundary structures, semiconductor devices having the void boundary structures, and methods of forming the same are provided. The structures, semiconductor devices and methods present a way for reducing parasitic capacitance between interconnections by forming a void between the interconnections. The interconnections may be formed on a semiconductor substrate. An upper width of each of the interconnections may be wider than a lower width thereof. A molding layer encompassing the interconnections may be formed. A void boundary layer covering the molding layer may be formed to define the void between the interconnections.

Abstract: The present invention provides a micro-magnetoelastic biosensor array for detection of the hybridization of target DNA and a method of fabricating such biosensor arrays. The biosensor array activate the magnetoelastic biosensors vibrated by an AC magnetic field, thus simply and quickly analyzing genetic materials as well as obtaining a large amount of evolving information through a real-time solution monitoring of the DNA immobilization and hybridization processes, without labeling the target sample using radioactive isotopes, enzymes or fluorescent dyes.