Abstract: The present inventive concept is a substrate processing method in which processing steps are carried out on a substrate supported on a support unit in a processing space that is divided into a first processing area and a second processing area, the substrate processing method comprising: a step in which a first gas and a first purge gas are sprayed in the first processing area; and a step in which a second purge gas and a second gas are sequentially sprayed in the second processing area.

Abstract: The present inventive concept is a substrate processing method in which processing steps are carried out on a substrate supported on a support unit in a processing space that is divided into a first processing area and a second processing area, the substrate processing method comprising: a step in which a first gas and a first purge gas are sprayed in the first processing area; and a step in which a second purge gas and a second gas are sequentially sprayed in the second processing area.

Abstract: A method for forming a capacitor electrode in accordance with an exemplary embodiment includes a step of forming a TiN thin-film by injecting a source containing titanium (Ti) and a reactant containing nitrogen and a step of forming SiN thin-film by injecting a source containing silicon (Si) and a reactant containing nitrogen, and at least one of the source containing titanium (Ti) and the source containing silicon (Si) is injected a plurality of times. Thus, in accordance with exemplary embodiments, when at least one of a lower electrode and an upper electrode of a capacitor is formed by laminating the TiN thin-film and the SiN thin-film, a deposition speed of the SiN thin film may be improved, and step coverage of the thin film may be improved.

Abstract: The present inventive concept relates to a substrate processing method in which a processing process is performed on a substrate in a processing space divided into a first processing region and a second processing region. The substrate processing method comprises the steps of: performing a first processing process on a substrate in the first processing region when the substrate supported by the support part is positioned in the first processing region; moving the substrate to the second processing region by rotating the support part when the first processing process is completed; and performing a second processing process on the substrate in the second processing region when the substrate supported by the support part is positioned in the second processing region.

Abstract: The present inventive concept is a substrate processing method in which processing steps are carried out on a substrate supported on a support unit in a processing space that is divided into a first processing area and a second processing area, the substrate processing method comprising: a step in which a first gas and a first purge gas are sprayed in the first processing area; and a step in which a second purge gas and a second gas are sequentially sprayed in the second processing area.

Abstract: The present disclosure relates to a gas distribution apparatus for substrate processing apparatuses, including: a distribution body distributing a process gas toward a substrate supporting unit supporting a substrate; a first injection hole provided in the distribution body, a process gas which is to be distributed toward the substrate supporting unit being injected through the first inject hole; and a second injection hole provided in the distribution body at a position spaced apart from the first injection hole, a process gas which is to be distributed toward the substrate supporting unit being injected through the second inject hole, and a substrate processing apparatus.

Abstract: The present disclosure relates to a gas distribution apparatus for substrate processing apparatuses, including: a distribution body distributing a process gas toward a substrate supporting unit supporting a substrate; a first injection hole provided in the distribution body, a process gas which is to be distributed toward the substrate supporting unit being injected through the first inject hole; and a second injection hole provided in the distribution body at a position spaced apart from the first injection hole, a process gas which is to be distributed toward the substrate supporting unit being injected through the second inject hole, and a substrate processing apparatus.