Abstract: The present disclosure provides a shorting bar structure and a method for manufacturing the same, and a Thin Film Transistor (TFT) substrate. The shorting bar structure comprises: a test wire; a test probe contact part connected to the test wire and configured to be able to contact with a test probe; and at least one PN junction structure located between the test wire and at least one wire under test, and configured to allow a test signal to be unidirectionally transmittable in a direction from the test wire to the wire under test.

Abstract: The present disclosure provides a shorting bar structure and a method for manufacturing the same, and a Thin Film Transistor (TFT) substrate. The shorting bar structure comprises: a test wire; a test probe contact part connected to the test wire and configured to be able to contact with a test probe; and at least one PN junction structure located between the test wire and at least one wire under test, and configured to allow a test signal to be unidirectionally transmittable in a direction from the test wire to the wire under test.

Abstract: Embodiments of the present invention provide an array substrate and a method of producing the same, a display panel and a display device, solving problems of detaching of film formed by CVD in the array substrate in prior art. The array substrate includes a plurality of data lines and a plurality of gate lines that are disposed in cross orientation. The array substrate further includes: a conductive repairing structure located at a damaged region of the data line and/or a damaged region of the gate line; and an insulating protective film configured to cover a region where at least one conductive repairing structure is located. As the region where the at least one conductive repairing structure is located is covered by the insulating protective film, the conductive repairing structure covered by the insulating protective film is not prone to be detached off.