Abstract: There is provided a ruthenium wiring, including: a TiON film formed as a base film in a recess formed in a predetermined film on a surface of a substrate; and a ruthenium film formed on the TiON film so as to fill the recess.

Abstract: Disclosed is a plasma film-forming method including: accommodating a workpiece in a chamber; supplying a film-forming gas into the chamber; generating plasma within the chamber; and exciting the film-forming gas by the plasma to form a predetermined film on the workpiece. Helium gas is supplied as a plasma generating gas into the chamber together with the film-forming gas to generate plasma containing the helium gas in the chamber.

Abstract: Disclosed is a microwave plasma source including a microwave generator that generates microwaves; a waveguide that propagates the microwaves in a TE mode; a microwave converter including a conversion port that converts a vibration mode of the microwaves guided from the waveguide from the TE mode into a TEM mode, and a coaxial waveguide that propagates the microwaves from the conversion port toward the chamber and converts a remaining TE mode component into the TEM mode during the propagation; a planar antenna including a plurality of slots that radiate the microwaves guided to the coaxial waveguide toward the chamber; and a microwave transmitting plate made of a dielectric material that transmits the microwaves radiated from the plurality of slots of the planar antenna to the chamber. A length of the coaxial waveguide is equal to or longer than a wavelength of the microwaves generated from the microwave generator.

Abstract: There is provided a ruthenium wiring, including: a TiON film formed as a base film in a recess formed in a predetermined film on a surface of a substrate; and a ruthenium film formed on the TiON film so as to fill the recess.

Abstract: Disclosed is a plasma film-forming method including: accommodating a workpiece in a chamber; supplying a film-forming gas into the chamber; generating plasma within the chamber; and exciting the film-forming gas by the plasma to form a predetermined film on the workpiece. Helium gas is supplied as a plasma generating gas into the chamber together with the film-forming gas to generate plasma containing the helium gas in the chamber.

Abstract: Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.

Abstract: In a plasma processing method, plasma processing is performed in a state where the object is attracted and held on the electrostatic chuck by applying a first voltage as an application voltage thereto and a thermal conduction gas is supplied to a gap between the electrostatic chuck and the object. The application voltage is decreased while stopping the supply of the thermal conduction gas and exhausting the thermal conduction gas remaining between the electrostatic chuck and the object upon completion of the plasma processing. The object is separated from the electrostatic chuck by setting the application voltage to the electrostatic chuck to zero after the application voltage is decreased.

Abstract: Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.

Abstract: In a plasma processing method, plasma processing is performed in a state where the object is attracted and held on the electrostatic chuck by applying a first voltage as an application voltage thereto and a thermal conduction gas is supplied to a gap between the electrostatic chuck and the object. The application voltage is decreased while stopping the supply of the thermal conduction gas and exhausting the thermal conduction gas remaining between the electrostatic chuck and the object upon completion of the plasma processing. The object is separated from the electrostatic chuck by setting the application voltage to the electrostatic chuck to zero after the application voltage is decreased.

Abstract: In a plasma processing apparatus, a mounting table is provided in a processing chamber, and a remote plasma generating unit is configured to generate an excited gas by exiting a hydrogen-containing gas. The remote plasma generating unit has an outlet for discharging the excited gas. A diffusion unit is provided to correspond to the outlet of the remote plasma generating unit and serves to receive the excited gas flowing from the outlet and diffuse the hydrogen active species having a reduced amount of hydrogen ions. An ion filter is disposed between the diffusion unit and the mounting table while being separated from the diffusion unit. The ion filter serves to capture the hydrogen ions contained in the hydrogen active species diffused by the diffusion unit and allow the hydrogen active species having a further reduced amount of hydrogen ions to pass therethrough the mounting table.