Abstract: A silicon-on-insulator semiconductor device and manufacturing method therefor is provided in which a single wafer die contains a transistor over an insulator layer to form a fully depleted silicon-on-insulator device and a transistor formed in a semiconductor island over an insulator structure on the semiconductor wafer forms a partially depleted silicon-on-insulator device.

Abstract: A method for forming shallow trench isolation wherein oxide divots at the edge of the isolation and active regions are reduced or eliminated is described. A trench is etched into a semiconductor substrate. An oxide layer is deposited overlying the semiconductor substrate and filling the trench. Nitrogen atoms are implanted into the oxide layer overlying the trench. The substrate is annealed whereby a layer of nitrogen-rich oxide is formed at the surface of the oxide layer overlying the trench.

Abstract: A method for forming a thicker silicide over a MOS device is described. This is achieved using a process where the gate structure is formed by conventional techniques upon a substrate. A low-energy implantation is performed to form lightly doped source and drain (LDD) regions in the substrate in the areas not protected by the gate structure. A first spacer composed of tetraethyl-oxysilane (TEOS oxide), for example, is formed along the sidewalls of the gate structure. A second low-energy implantation is performed to form the source and drain (S/D) in the areas not protected by the gate structure and first spacer. A layer of metal such as titanium (Ti), for example, is then deposited over the surface of the gate structure. A second sidewall spacer composed of titanium nitride (TiN), for example, is formed along the sidewalls of the gate structure covering the metal over the first sidewall spacer. A layer of polysilicon is then deposited over the surface of the gate structure.

Abstract: A method for forming shallow trench isolation wherein oxide divots at the edge of the isolation and active regions are reduced or eliminated is described. A trench is etched into a semiconductor substrate. An oxide layer is deposited overlying the semiconductor substrate and filling the trench. Nitrogen atoms are implanted into the oxide layer overlying the trench. The substrate is annealed whereby a layer of nitrogen-rich oxide is formed at the surface of the oxide layer overlying the trench.

Abstract: A method of forming a a self-aligned elevated transistor using selective epitaxial growth is described. An oxide layer is provided overlying a semiconductor substrate. The oxide layer is etched through to the semiconductor substrate to form a trench having a lower portion contacting the substrate and an upper portion having a width larger than the width of the lower portion. A silicon layer is grown within the trench using selective epitaxial growth wherein the silicon layer fills the lower portion and partially fills the upper portion. Nitride spacers are formed on the sidewalls of the trench. A polysilicon layer is deposited overlying the oxide layer and within the trench and etched back to form a gate electrode within the trench between the nitride spacers. The nitride spacers are etched away where they are not covered by the gate electrode leaving thin nitride spacers on sidewalls of the gate electrode.

Abstract: A method of manufacturing conductive lines that are thicker (not wider) in the critical paths areas. We form a plurality of first level conductive lines over a first dielectric layer. The first conductive lines run in a first direction. The first level conductive lines are comprised of a first level first conductive line and a second first level conductive line. We form a second dielectric layer over the first level conductive lines and the first dielectric layer. Next, we form a via opening in the second dielectric layer over a portion of the first level first conductive line. A plug is formed filling the via opening. We form a trench pattern in the second dielectric layer. The trench pattern is comprised of trenches that are approximately orthogonal to the first level conductive lines. We fill the trenches with a conductive material to form supplemental second lines. We form second level conductive lines over the supplemental second lines and the plug.

Abstract: A method is provided to reduce poly depletion in MOS transistors. Conventionally, after a polysilicon electrode has been doped, an anneal step is usually performed to activate the dopants. However, the anneal step may be insufficient to drive the implanted impurities down the entire depth of the polysilicon electrode. Consequently, a portion of the polysilicon gate nearest to the gate oxide will be depleted of dopants. This poly depletion will have a detrimental effect on the control of the threshold voltage, and hence on the performance of the device. It is disclosed in the present invention a method of forming polysilicon gates where dopant depletion at the interface near the gate oxide layer is alleviated substantially by using laser annealing; however, by first pre-amorphizing the polycrystalline silicon prior to ion (implantation to a desired depth such that during laser annealing the dopants will diffuse uniformly to a melt depth.

Abstract: Low current leakage DRAM structures are achieved using a selective silicon epitaxial growth over an insulating layer on memory cell (device) areas. An insulating layer, that also serves as a stress-release layer, and a Si3N4 hard mask are patterned to leave portions over the memory cell areas. Shallow trenches are etched in the substrate and filled with a CVD oxide which is polished back to the hard mask to form shallow trench isolation (STI) around the memory cell areas. The hard mask is selectively removed to form recesses in the STI aligned over the memory cell areas exposing the underlying insulating layer. Openings are etched in the insulating layer to provide a silicon-seed surface from which is grown a selective epitaxial layer extending over the insulating layer within the recesses. After growing a gate oxide on the epitaxial layer, FETs and DRAM capacitors can be formed on the epitaxial layer.

Abstract: Low current leakage DRAM structures are achieved using a selective silicon epitaxial growth over an insulating layer on memory cell (device) areas. An insulating layer, that also serves as a stress-release layer, and a Si3N4 hard mask are patterned to leave portions over the memory cell areas. Shallow trenches are etched in the substrate and filled with a CVD oxide which is polished back to the hard mask to form shallow trench isolation (STI) around the memory cell areas. The hard mask is selectively removed to form recesses in the STI aligned over the memory cell areas exposing the underlying insulating layer. Openings are etched in the insulating layer to provide a silicon-seed surface from which is grown a selective epitaxial layer extending over the insulating layer within the recesses. After growing a gate oxide on the epitaxial layer, FETs and DRAM capacitors can be formed on the epitaxial layer.

Abstract: A method to form robust dual damascene interconnects by decoupling via and connective line trench filling has been achieved. A first dielectric layer is deposited overlying a silicon nitride layer. A shielding layer is deposited. The shielding layer, the first dielectric layer, and the silicon nitride layer are patterned to form via trenches. A first barrier layer is deposited to line the trenches. The via trenches are filled with a first copper layer by a single deposition or by depositing a seed layer and then electroless or electrochemical plating. The first copper layer is polished down to complete the vias. A second barrier layer is deposited. The second barrier layer is patterned to form via caps. A second dielectric layer is deposited. A capping layer is deposited. The capping layer and the second dielectric layer are patterned to form connective line trenches that expose a part of the via caps. A third barrier layer is deposited to line the connective line trenches.

Abstract: A process for forming metal structures, encapsulated in silicon rich oxide, (SRO), shapes and layers, needed to protect the metal structures from the corrosive effects of fluorine radicals, present in low k, fluorinated silica glass, (FSG), which in turn is formed in the spaces between metal structures, has been developed. The process features initial formation of the metal structures, capped with an overlying SRO shape. This is followed by the formation of SRO spacers on the sides of the SRO capped, metal structures. Another thin, conformal SRO layer is then deposited to insure encapsulation of the metal structures, however still leaving adequate space between the SRO encapsulated metal structures for the low k FSG layer, needed to limit capacitance and improve device performance.

Abstract: A method to integrate low dielectric constant dielectric materials with copper metallization is described. A metal line is provided overlying a semiconductor substrate and having a nitride capping layer thereover. A polysilicon layer is deposited over the nitride layer and patterned to form dummy vias. A dielectric liner layer is conformally deposited overlying the nitride layer and dummy vias. A dielectric layer having a low dielectric constant is spun-on overlying the liner layer and covering the dummy vias. The dielectric layer is polished down whereby the dummy vias are exposed. Thereafter, the dielectric layer is cured whereby a cross-linked surface layer is formed. The dummy vias are removed thereby exposing a portion of the nitride layer within the via openings. The exposed nitride layer is removed. The via openings are filled with a copper layer which is planarized to complete copper metallization in the fabrication of an integrated circuit device.

Abstract: The method for a transistor using a replacement gate process that has a doped low-K dielectric spacer that lowers the junction capacitance. A dummy gate is formed over a substrate. Ions are implanted into the substrate using the dummy gate as an implant mask to form source and drain regions. A masking layer is formed on the substrate over the source and drain regions. We remove the dummy gate. Doped low k spacers are formed on the sidewalls of the masking layer. The doped spacers are heated to diffuse dopant into the substrate to form lightly doped drain (LDD regions). We form a high k gate dielectric layer over the masking layer. A gate layer is formed over the high K dielectric layer. The gate layer is chemical-mechanical polished (CMP) to form a gate over the high k dielectric layer and to remove the gate layer over the masking layer.

Abstract: A method of forming shallow junction MOSFETs is achieved. A gate oxide layer is formed overlying a substrate. A first electrode layer, of polysilicon or metal, is deposited. A silicon nitride layer is deposited. The silicon nitride layer and the first electrode layer are etched through to form temporary MOSFET gates. Ions are implanted into the substrate to form lightly doped junctions. A spacer layer is deposited. The spacer layer and the gate oxide layer are anisotropically etched to form sidewall spacers. Ions are implanted into the substrate to form heavily doped junctions. The silicon nitride layer is etched away. A second electrode layer, of polysilicon or metal, is deposited overlying the substrate, the sidewall spacers, and the first polysilicon layer. The second electrode layer is polished down to the top surfaces of the sidewall spacers to complete the MOSFETs and to form permanent gates and conductive connections to the source and drain junctions.

Abstract: A method of forming shallow junction MOSFETs is achieved. A gate oxide layer is formed overlying a substrate. A first electrode layer, of polysilicon or metal, is deposited. A silicon nitride layer is deposited. The silicon nitride layer and the first electrode layer are etched through to form temporary MOSFET gates. Ions are implanted into the substrate to form lightly doped junctions. A spacer layer is deposited. The spacer layer and the gate oxide layer are anisotropically etched to form sidewall spacers. Ions are implanted into the substrate to form heavily doped junctions. The silicon nitride layer is etched away. A second electrode layer, of polysilicon or metal, is deposited overlying the substrate, the sidewall spacers, and the first polysilicon layer. The second electrode layer is polished down to the top surfaces of the sidewall spacers to complete the MOSFETs and to form permanent gates and conductive connections to the source and drain junctions.

Abstract: A method of forming a self-aligned elevated transistor using selective epitaxial growth is described. An oxide layer is provided overlying a semiconductor substrate. The oxide layer is etched through to the semiconductor substrate to form a trench having a lower portion contacting the substrate and an upper portion having a width larger than the width of the lower portion. A silicon layer is grown within the trench using selective epitaxial growth wherein the silicon layer fills the lower portion and partially fills the upper portion. Nitride spacers are formed on the sidewalls of the trench. A polysilicon layer is deposited overlying the oxide layer and within the trench and etched back to form a gate electrode within the trench between the nitride spacers. The nitride spacers are etched away where they are not covered by the gate electrode leaving thin nitride spacers on sidewalls of the gate electrode.

Abstract: Low current leakage DRAM structures are achieved using a selective silicon epitaxial growth over an insulating layer on memory cell (device) areas. An insulating layer, that also serves as a stress-release layer, and a Si3N4 hard mask are patterned to leave portions over the memory cell areas. Shallow trenches are etched in the substrate and filled with a CVD oxide which is polished back to the hard mask to form shallow trench isolation (STI) around the memory cell areas. The hard mask is selectively removed to form recesses in the STI aligned over the memory cell areas exposing the underlying insulating layer. Openings are etched in the insulating layer to provide a silicon-seed surface from which is grown a selective epitaxial layer extending over the insulating layer within the recesses. After growing a gate oxide on the epitaxial layer, FETs and DRAM capacitors can be formed on the epitaxial layer.

Abstract: A method for fabricating a metal-insulator-metal capacitor wherein top metal corner shaping during patterning is eliminated is described. An insulating layer is provided overlying a semiconductor substrate. A composite metal stack is formed comprising a first metal layer overlying the insulating layer, a capacitor dielectric layer overlying the first metal layer, a second metal layer overlying the capacitor dielectric layer, and a hard mask layer overlying the second metal layer. A first photoresist mask is formed overlying the hard mask layer. The composite metal stack is patterned using the first photoresist mask as an etching mask whereby the patterned first metal layer forms a bottom electrode of the capacitor. A portion of the first photoresist mask is removed by plasma ashing to form a second photoresist mask narrower than the first photoresist mask. The hard mask layer is patterned using the second photoresist mask as an etching mask.

Abstract: A method of forming a metal gate structure, on a high k gate insulator layer, for NMOS devices, and simultaneously forming a metal-polysilicon gate structure, on the same high k gate insulator layer, for PMOS devices, has been developed. The method features forming openings in a composite insulator layer, via removal of silicon nitride dummy gate structures that were embedded in a composite insulator layer, with the openings exposing regions of the semiconductor substrate to be used for subsequent NMOS and PMOS channel regions. Deposition of a high k gate insulator layer is followed by deposition of an in situ doped polysilicon layer. After removal of a portion of the in situ doped polysilicon layer located in the NMOS region, a metal layer is deposited on the underlying high k gate insulator layer in the NMOS region, and on the in situ polysilicon layer in the PMOS region.

Abstract: A method of forming shallow junction MOSFETs is achieved. A gate oxide layer is formed overlying a substrate. A first electrode layer, of polysilicon or metal, is deposited. A silicon nitride layer is deposited. The silicon nitride layer and the first electrode layer are etched through to form temporary MOSFET gates. Ions are implanted into the substrate to form lightly doped junctions. A spacer layer is deposited. The spacer layer and the gate oxide layer are anisotropically etched to form sidewall spacers. Ions are implanted into the substrate to form heavily doped junctions. The silicon nitride layer is etched away. A second electrode layer, of polysilicon or metal, is deposited overlying the substrate, the sidewall spacers, and the first polysilicon layer. The second electrode layer is polished down to the top surfaces of the sidewall spacers to complete the MOSFETs and to form permanent gates and conductive connections to the source and drain junctions.