Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.

Abstract: An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

Abstract: An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.

Abstract: Provided are structurally-reconfigurable, optical metasurfaces constructed by, for example, integrating a plasmonic lattice array in the gap between a pair of microbodies that serve to locally amplify the strain created on an elastomeric substrate by an external mechanical stimulus. The spatial arrangement and therefore the optical response of the plasmonic lattice array is reversible.

Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.

Abstract: An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.

Abstract: A sensor-effector system includes an array of sensor-effector transducers providing a plurality of sensed signals and applying a plurality of effector signals. The array provides signals to input signal conditioning circuitry which digitizes and filters the plurality of sensed signals. A processor receives the digitized signals, and processes them to generate multiple feature vectors. It also analyzes the feature vectors to identify patterns and classify the identified patterns and generates at least one response vector resulting from the recognized pattern. The response vector is applied to output signal conditioning circuitry, coupled which converts the response vector to at least one analog signal which is applied as an effector signal to the array of sensor-effector transducers.

Abstract: Electrodes in an organic thin film transistor based on single component organic semiconductors may be chemically modified to realize ambipolar transport. Electronic circuits may be assembled which include at least two such organic thin film transistors wherein at least one transistor is configured as a pmos transistor and at least on other transistor is configured as a nmos transistor.

Abstract: A sensor-effector system includes an array of sensor-effector transducers providing a plurality of sensed signals and applying a plurality of effector signals. The array provides signals to input signal conditioning circuitry which digitizes and filters the plurality of sensed signals. A processor receives the digitized signals, and processes them to generate multiple feature vectors. It also analyzes the feature vectors to identify patterns and classify the identified patterns and generates at least one response vector resulting from the recognized pattern. The response vector is applied to output signal conditioning circuitry, coupled which converts the response vector to at least one analog signal which is applied as an effector signal to the array of sensor-effector transducers.

Abstract: Electrodes in an organic thin film transistor based on single component organic semiconductors may be chemically modified to realize ambipolar transport. Electronic circuits may be assembled which include at least two such organic thin film transistors wherein at least one transistor is configured as a pmos transistor and at least on other transistor is configured as a nmos transistor.

Abstract: The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.

Abstract: The present invention provides a process for preparing a thin film having alternating monolayers of a metal-metal bonded complex monolayer and an organic monolayer by layer-by-layer growth. The process comprises the steps of: (1) applying onto a surface of a substrate a first linker compound to produce a primer layer; (2) applying onto said primer layer a layer of a metal-metal bonded complex to produce a metal-metal bonded complex monolayer on said primer layer;(3) applying onto said metal-metal bonded complex monolayer a second linker compound; and optionally(4) sequentially repeating steps (2) and (3) at least once to produce said layer-by-layer grown thin film having alternating monolayers of a metal-metal bonded complex monolayer and an organic monolayer.

Abstract: A conjugated molecular assembly includes a substrate, and an extended conjugated molecule attached to the substrate, the extended conjugated molecule including a first conjugated molecule having a first functional group for attaching to the substrate, and a second conjugated molecule which is covalently linked to the first conjugated molecule.

Abstract: A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.

Abstract: The present invention provides inspection methods and structures for facilitating the visualization and/or detection of specific chip structures. Optical or fluorescent labeling techniques are used to “stain” a specific chip structure for easier detection of the structure. Also, a temporary/sacrificial illuminating (e.g., fluorescent) film is added to the semiconductor process to facilitate the detection of a specific chip structure. Further, a specific chip structure is doped with a fluorescent material during the semiconductor process. A method of the present invention comprises: providing a first and a second material; processing the first material to form a portion of a semiconductor structure; and detecting a condition of the second material to determine whether processing of the first material is complete.

Abstract: An organic semiconductor device is formed on a substrate by solution deposition of an active channel layer interposed between a pair of electrodes. The active channel layer includes pentacene formed by thermal treatment of its precursors and operates as a hole carrier. Within the pentacene film are nanoparticles or nanowires of a second material that operate as electron carriers. The electron carrier materials are selected from a group of soluble semiconducting inorganic nanocrystals and nanowires or solube derivatives of fullerene.