Abstract: Disclosed is a lithography process on a sample including at least one structure and covered by at least a lower layer of resist and a upper layer of resist the process including: using an optical device to image or determine, in reference to the optical device, a position of the selected structure and positions of markers integral with the sample; using an electron-beam device, imaging or determining the position of each marker in reference to the electron-beam device; deducing the position of the selected structure in reference to the electron-beam device; exposing to an electron beam the upper layer of resist above the position of the selected structure to remove all the thickness of the upper layer of resist above the position of the selected structure but none or only part of the thickness of the lower layer of resist above the position of the selected structure.

Abstract: Disclosed is a lithography process on a sample with at least one emitter, the process including: putting at least one layer of resist above the sample; exciting one selected emitter with light through the at least one layer of resist; detecting light emitted by the excited selected emitter and determining a position of the selected emitter; and curing with a light beam a part of the at least one layer of resist above the position of the selected emitter, the light beam being a shaped light beam having a cross-section, this cross-section having a central part, an intermediate part surrounding the central part and a border part surrounding the intermediate part, the intensity of the shaped light beam on the at least one layer of resist reaching a maximum at the intermediate part.

Abstract: Disclosed is a lithography process on a sample including at least one structure and covered by at least a lower layer of resist and a upper layer of resist the process including: using an optical device to image or determine, in reference to the optical device, a position of the selected structure and positions of markers integral with the sample; using an electron-beam device, imaging or determining the position of each marker in reference to the electron-beam device; deducing the position of the selected structure in reference to the electron-beam device; exposing to an electron beam the upper layer of resist above the position of the selected structure to remove all the thickness of the upper layer of resist above the position of the selected structure but none or only part of the thickness of the lower layer of resist above the position of the selected structure.

Abstract: A detector for terahertz electromagnetic waves includes a terahertz optomechanical transducer to transform an incident electromagnetic wave, having a terahertz frequency within a terahertz frequency band, into a measurable mechanical response; and a detection device for detecting an output signal. The terahertz optomechanical transducer includes a first element and an opposite element forming with the first element a capacitive gap.

Abstract: Disclosed is a lithography process on a sample with at least one emitter, the process including: putting at least one layer of resist above the sample; exciting one selected emitter with light through the at least one layer of resist; detecting light emitted by the excited selected emitter and determining a position of the selected emitter; and curing with a light beam a part of the at least one layer of resist above the position of the selected emitter, the light beam being a shaped light beam having a cross-section, this cross-section having a central part, an intermediate part surrounding the central part and a border part surrounding the intermediate part, the intensity of the shaped light beam on the at least one layer of resist reaching a maximum at the intermediate part.

Abstract: A detector for terahertz electromagnetic waves includes a terahertz optomechanical transducer to transform an incident electromagnetic wave, having a terahertz frequency within a terahertz frequency band, into a measurable mechanical response; and a detection device for detecting an output signal. The terahertz optomechanical transducer includes a first element and an opposite element forming with the first element a capacitive gap.