Patents by Inventor Cherng Han

Cherng Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080112089
    Abstract: Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.
    Type: Application
    Filed: January 9, 2008
    Publication date: May 15, 2008
    Inventors: Min Li, Cheng Horng, Cherng Han, Yue Liu, Yu-Hsia Chen, Ru-Ying Tong
  • Publication number: 20060007605
    Abstract: Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is provided.
    Type: Application
    Filed: July 7, 2004
    Publication date: January 12, 2006
    Inventors: Min Li, Cheng Horng, Cherng Han, Yue Liu, Yu-Hsia Chen, Ru-Ying Tong
  • Publication number: 20050141149
    Abstract: Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
    Type: Application
    Filed: January 14, 2005
    Publication date: June 30, 2005
    Inventors: Cheng Horng, Min Li, Ru-Ying Tong, Yun-Fei Li, You Zheng, Simon Liao, Kochan Ju, Cherng Han
  • Publication number: 20050122621
    Abstract: One of the major requirements for higher frequency extendability is to reduce yoke length and inductance in order to have fast saturation. This has been accomplished by using a design that provides a cavity in the lower pole piece inside which is located at least two coils, one on top of the other. A process for manufacturing the device is also described.
    Type: Application
    Filed: January 25, 2005
    Publication date: June 9, 2005
    Inventors: Cherng Han, Mao-Min Chen, Pokang Wang, Yimin Guo
  • Publication number: 20050122637
    Abstract: Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
    Type: Application
    Filed: January 14, 2005
    Publication date: June 9, 2005
    Inventors: Cheng Horng, Min Li, Ru-Ying Tong, Yun-Fei Li, YouFeng Zheng, Simon Liao, Kochan Ju, Cherng Han
  • Publication number: 20050122638
    Abstract: Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
    Type: Application
    Filed: January 14, 2005
    Publication date: June 9, 2005
    Inventors: Cheng Horng, Min Li, Ru-Ying Tong, Yun-Fei Li, You Zheng, Simon Liao, Kochan Ju, Cherng Han
  • Publication number: 20050024769
    Abstract: Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention a layer of alumina is deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance. Application of this process to the manufacture of a two coil planar magnetic write head is described.
    Type: Application
    Filed: August 1, 2003
    Publication date: February 3, 2005
    Inventors: Cherng Han, Mao-Min Chen