Patents by Inventor Cherng-Shiaw Jacob TSAI

Cherng-Shiaw Jacob TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230055272
    Abstract: An interconnection structure includes a first dielectric layer, a first conductive layer disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer, a second conductive layer disposed in the second dielectric layer in electrical contact with the first conductive layer, a third dielectric layer formed over the second dielectric layer, wherein the third dielectric layer comprises silicon carbon-nitride (SiCN) based material, and a resistor device disposed in the third dielectric layer.
    Type: Application
    Filed: August 19, 2021
    Publication date: February 23, 2023
    Inventors: Kai-Fang CHENG, Cherng-Shiaw Jacob TSAI, Cheng-Chin LEE, Ming-Hsien LIN, Hsiao-Kang CHANG