Patents by Inventor Chester Qian

Chester Qian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High resistivity FeXN sputtered films for magnetic storage devices and method of fabrication
    Patent number: 6410170
    Abstract: A preferred method of the present invention provides an improved thin film for carrying magnetic flux. With the preferred method, the magnetic thin film may be formed by depositing Fe by reactive sputtering using N2 to form a thin film comprising &agr;-Fe and &ggr;-Fe4N. With this method, the relative percentage of &ggr;-Fe4N in the deposited film is increased to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N. Increasing &ggr;-Fe4N increases resistivity while expanding lattice constants to provide improved coercivity at higher resistivity. Increasing the percentage of &ggr;-Fe4N to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N may be accomplished by adjusting sputtering power, N2 gas percentage, a flow rate of N2, and substrate bias.
    Type: Grant
    Filed: May 20, 1999
    Date of Patent: June 25, 2002
    Assignee: Read-Rite Corporation
    Inventors: Yingjian Chen, Chester Qian