Abstract: A system for extraction of water from air includes a salt plate, a moisture absorption unit and a filter unit. The system further includes a storage unit. A method for extraction of water using the system includes placing the salt plate beneath the moisture absorption unit during a moisture absorption phase and placing the salt plate beneath the filter unit during a water extraction phase. The extracted water is stored in the storage unit for drinking and cleaning purposes. Further, a system for cleaning solar panels includes a moisture absorbing unit, a filter unit, a salt plate, a water storage unit, a solar panel, a wiper mechanism to receive water from the storage unit to clean the solar panel, and support elements to moveably support wiper mechanism.

Abstract: A system for extraction of water from air includes a salt plate, a moisture absorption unit and a filter unit. The system further includes a storage unit. A method for extraction of water using the system includes placing the salt plate beneath the moisture absorption unit during a moisture absorption phase and placing the salt plate beneath the filter unit during a water extraction phase. The extracted water is stored in the storage unit for drinking and cleaning purposes. Further, a system for cleaning solar panels includes a moisture absorbing unit, a filter unit, a salt plate, a water storage unit, a solar panel, a wiper mechanism to receive water from the storage unit to clean the solar panel, and support elements to moveably support wiper mechanism.

Abstract: In one inventive aspect, a thin film device is manufactured by (a) forming a porous semiconductor layer in the form of a thin film on an original substrate, the formation being immediately followed by (b) separation of the thin film by a lift-off process from the original substrate; (c) transfer of the thin film to a dummy support, the thin film not being attached to the dummy support; (d) fabrication of a device on top of the thin film; and (e) transfer and attachment of said device on said thin film on a foreign substrate.

Abstract: A method and apparatus for slicing a semiconductor substrate. In one embodiment, the invention allows repetitive etching of a surface of the semiconductor substrate with a time dependent concentration of fluorine ions and a time dependent current I, such that multiple porous layers are obtained. The porous layer is released, and the released porous layer is removed from the surface of the substrate. The surface roughness of the porous layer is maintained within an acceptable or desired level of roughness value. The invention also provides an apparatus including a container having an etching solution. The semiconductor substrate may be protected by a tube covering at least a potion of said semiconductor substrate from said etching solution. The rate of insertion of said semiconductor substrate into the container is controlled to synchronize the lift-off with the insertion of the correct thickness of the semiconductor substrate. The anodising current is provided between two electrodes during operation.

Abstract: A method and apparatus for slicing a semiconductor substrate. In one embodiment, the invention allows repetitive etching of a surface of the semiconductor substrate with a time dependent concentration of F— and a time dependent current I, such that multiple porous layers are obtained. The porous layer is removed and the released porous layer from the surface of the substrate. The surface roughness of the porous layer is maintained within an acceptable or desired level of roughness value. The invention also provides an apparatus including a container having an etching solution. The semiconductor substrate may be protected by a tube covering at least a potion of said semiconductor substrate from said etching solution. The rate of insertion of said semiconductor substrate into the container is controlled to synchronize the lift-off with the insertion of the correct thickness of the semiconductor substrate. The anodising current is provided between two electrodes during operation.

Abstract: A method for the manufacture, formation, and removal of porous layers in a semiconductor substrate having at least a surface acting as a cathode. The method comprises applying a solution comprising negative Fluorine (F−) ions between the surface of the semiconductor substrate and an anode. The method further comprises applying a predetermined current between the anode and the cathode. The method further comprises maintaining the predetermined current at substantially the same current value for a sufficient amount of time to obtain a low porosity layer at said surface. A high porosity layer positioned under the low porosity layer is also obtained by the method of the invention.