Abstract: An address path circuit with a row redundant scheme may include an address buffer for buffering an external address to output an internal address, a command buffer for buffering a plurality of external commands, a pre-latch unit for pre-latching the internal address from the address buffer using a specific one of the commands buffered by the command buffer to output a pre-latched internal address, a detector for detecting whether the pre-latched internal address from the pre-latch unit is a repaired address or normal address and outputting one or more detection signals as a result of the detection an address latch unit for latching the internal address from the address buffer synchronously with a buffered clock to output a latched internal address, and a global address generator for receiving the detection signals from the detector and the latched internal address from the address latch unit and generating a global row address.

Abstract: An address path circuit with a row redundant scheme may include an address buffer for buffering an external address to output an internal address, a command buffer for buffering a plurality of external commands, a pre-latch unit for pre-latching the internal address from the address buffer using a specific one of the commands buffered by the command buffer to output a pre-latched internal address, a detector for detecting whether the pre-latched internal address from the pre-latch unit is a repaired address or normal address and outputting one or more detection signals as a result of the detection, an address latch unit for latching the internal address from the address buffer synchronously with a buffered clock to output a latched internal address, and a global address generator for receiving the detection signals from the detector and the latched internal address from the address latch unit and generating a global row address.

Abstract: A synchronous memory device having an output driver controller, comprises a DLL circuit for receiving an external clock and outputting an internal clock; an output driver for outputting data in synchronism with the internal clock; and an output driver controller for controlling operation of the output driver, wherein the output driver controller makes the output driver active after receiving from the DLL circuit a control signal indicating that the internal clock is locked and is in a stabilized state.

Abstract: Provided is a digital duty cycle corrector capable of generating a clock signal with the rate of duty 50:50, by means of three or more duty cycle correction circuits assigning different weight values to first and second clock signals that are different in duty cycle each other in order to reduce a phase difference between the first and second clock signals, and one or more duty cycle correction circuits assigning the same weight value to the first and second clock signals in order to eliminate a phase difference between the first and second clock signals.

Abstract: A semiconductor memory device processes external commands in parallel using divided clocks, which embodies a high-speed operation of a DRAM in increase of clock frequency. In the semiconductor memory device, command processing blocks are separated into row and column paths in parallel, and the command processing blocks connected in parallel are sequentially latched by clocks obtained by dividing input clocks applied externally, thereby improving the operation speed of the DRAM at high operation and reducing power consumption.