Patents by Inventor Cheung Cheng

Cheung Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistive random access memory device
    Patent number: 11950433
    Abstract: A memory device includes: a first conductor extending in parallel with a first axis; a first selector material comprising a first portion that extends along a first sidewall of the first conductor; a second selector material comprising a first portion that extends along the first sidewall of the first conductor; a first variable resistive material comprising a portion that extends along the first sidewall of the first conductor; and a second conductor extending in parallel with a second axis substantially perpendicular to the first axis, wherein the first portion of the first selector material, the first portion of the second selector material, and the portion of the first variable resistive material are arranged along a first direction in parallel with a third axis substantially perpendicular to the first axis and second axis.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jheng-Hong Jiang, Cheung Cheng, Chia-Wei Liu
  • NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
    Publication number: 20220384725
    Abstract: A memory device includes: a first conductor extending in parallel with a first axis; a first selector material comprising a first portion that extends along a first sidewall of the first conductor; a second selector material comprising a first portion that extends along the first sidewall of the first conductor; a first variable resistive material comprising a portion that extends along the first sidewall of the first conductor; and a second conductor extending in parallel with a second axis substantially perpendicular to the first axis, wherein the first portion of the first selector material, the first portion of the second selector material, and the portion of the first variable resistive material are arranged along a first direction in parallel with a third axis substantially perpendicular to the first axis and second axis.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Inventors: Jheng-Hong JIANG, Cheung CHENG, Chia-Wei LIU
  • Resistive random access memory device
    Patent number: 11489011
    Abstract: A memory device includes: a first conductor extending in parallel with a first axis; a first selector material comprising a first portion that extends along a first sidewall of the first conductor; a second selector material comprising a first portion that extends along the first sidewall of the first conductor; a first variable resistive material comprising a portion that extends along the first sidewall of the first conductor; and a second conductor extending in parallel with a second axis substantially perpendicular to the first axis, wherein the first portion of the first selector material, the first portion of the second selector material, and the portion of the first variable resistive material are arranged along a first direction in parallel with a third axis substantially perpendicular to the first axis and second axis.
    Type: Grant
    Filed: April 27, 2021
    Date of Patent: November 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jheng-Hong Jiang, Cheung Cheng, Chia-Wei Liu
  • NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
    Publication number: 20210265425
    Abstract: A memory device includes: a first conductor extending in parallel with a first axis; a first selector material comprising a first portion that extends along a first sidewall of the first conductor; a second selector material comprising a first portion that extends along the first sidewall of the first conductor; a first variable resistive material comprising a portion that extends along the first sidewall of the first conductor; and a second conductor extending in parallel with a second axis substantially perpendicular to the first axis, wherein the first portion of the first selector material, the first portion of the second selector material, and the portion of the first variable resistive material are arranged along a first direction in parallel with a third axis substantially perpendicular to the first axis and second axis.
    Type: Application
    Filed: April 27, 2021
    Publication date: August 26, 2021
    Inventors: Jheng-Hong JIANG, Cheung CHENG, Chia-Wei LIU
  • Resistive random access memory device
    Patent number: 11011576
    Abstract: A memory device includes: a first conductor extending in parallel with a first axis; a first selector material comprising a first portion that extends along a first sidewall of the first conductor; a second selector material comprising a first portion that extends along the first sidewall of the first conductor; a first variable resistive material comprising a portion that extends along the first sidewall of the first conductor; and a second conductor extending in parallel with a second axis substantially perpendicular to the first axis, wherein the first portion of the first selector material, the first portion of the second selector material, and the portion of the first variable resistive material are arranged along a first direction in parallel with a third axis substantially perpendicular to the first axis and second axis.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: May 18, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jheng-Hong Jiang, Cheung Cheng, Chia-Wei Liu
  • NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
    Publication number: 20200006428
    Abstract: A memory device includes: a first conductor extending in parallel with a first axis; a first selector material comprising a first portion that extends along a first sidewall of the first conductor; a second selector material comprising a first portion that extends along the first sidewall of the first conductor; a first variable resistive material comprising a portion that extends along the first sidewall of the first conductor; and a second conductor extending in parallel with a second axis substantially perpendicular to the first axis, wherein the first portion of the first selector material, the first potion of the second selector material, and the portion of the first variable resistive material are arranged along a first direction in parallel with a third axis substantially perpendicular to the first axis and second axis.
    Type: Application
    Filed: May 22, 2019
    Publication date: January 2, 2020
    Inventors: Jheng-Hong JIANG, Cheung Cheng, Chia-Wei Liu