Abstract: An embodiment of fabrication of a variable work function gates in a FUSI device is described. The embodiment uses a work function doping implant to dope the polysilicon to achieve a desired work function. Selective epitaxy growth (SEG) is used to form silicon over the source/drain regions. The doped poly-Si gate is fully silicided to form fully silicided gates that have a desired work function. We provide a substrate having a NMOS region and a PMOS region. We form a gate dielectric layer and a gate layer over said substrate. We perform a (gate Vt) gate layer implant process to implant impurities such as P+, As+, B+, BF2+, N+, Sb+, In+, C+, Si+, Ge+ or Ar+ into the gate layer gate in the NMOS gate regions and said PMOS gate regions. We form a cap layer over said gate layer. We pattern said cap layer, said gate layer and said gate dielectric layer to form a NMOS gate and a PMOS gate. Spacers are formed and S/D regions are formed. A metal is deposited over said substrate surface.

Abstract: An embodiment of fabrication of a variable work function gates in a FUSI device is described. The embodiment uses a work function doping implant to dope the polysilicon to achieve a desired work function. Selective epitaxy growth (SEG) is used to form silicon over the source/drain regions. The doped poly-Si gate is fully silicided to form fully silicided gates that have a desired work function. We provide a substrate having a NMOS region and a PMOS region. We form a gate dielectric layer and a gate layer over said substrate. We perform a (gate Vt) gate layer implant process to implant impurities such as P+, As+, B+, BF2+, N+, Sb+, In+, C+, Si+, Ge+ or Ar+ into the gate layer gate in the NMOS gate regions and said PMOS gate regions. We form a cap layer over said gate layer. We pattern said cap layer, said gate layer and said gate dielectric layer to form a NMOS gate and a PMOS gate. Spacers are formed and S/D regions are formed. A metal is deposited over said substrate surface.