Abstract: A safety driving detection and auxiliary system comprises a physiological sensing module, an alcohol detection module, a warning device and a computing device. The physiological sensing module is configured to obtain at least one piece of physiological information of a driver. The alcohol detection module is configured to detect an alcohol concentration of the driver. The warning device is configured to generate a warning signal. The computing device is connected to the physiological sensing module, the alcohol detection module and the warning device, and is configured to determine whether to actuate a vehicle controller according to the alcohol concentration of the driver, obtain a vehicle speed information from the vehicle controller, and actuate the warning device or/and control the vehicle controller at least according to the at least one piece of physiological information and the vehicle speed information.

Abstract: A method includes forming a fin over a substrate, forming an isolation region adjacent the fin, forming a dummy gate structure over the fin, and recessing the fin adjacent the dummy gate structure to form a first recess using a first etching process. The method also includes performing a plasma clean process on the first recess, the plasma clean process including placing the substrate on a holder disposed in a process chamber, heating the holder to a process temperature between 300° C. and 1000° C., introducing hydrogen gas into a plasma generation chamber connected to the process chamber, igniting a plasma within the plasma generation chamber to form hydrogen radicals, and exposing surfaces of the recess to the hydrogen radicals. The method also includes epitaxially growing a source/drain region in the first recess.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a gate structure over the fin; forming a recess in the fin and adjacent to the gate structure; performing a wet etch process to clean the recess; treating the recess with a plasma process; and performing a dry etch process to clean the recess after the plasma process and the wet etch process.

Abstract: A method includes forming a fin protruding from a substrate; forming an isolation region surrounding the fin; forming a gate structure extending over the fin and the isolation region; etching the fin adjacent the gate structure to form a recess; forming a source/drain region in the recess, including performing a first epitaxial process to grow a first semiconductor material in the recess, wherein the first epitaxial process preferentially forms facet planes of a first crystalline orientation; and performing a second epitaxial process to grow a second semiconductor material on the first semiconductor material, wherein the second epitaxial process preferentially forms facet planes of a second crystalline orientation, wherein a top surface of the second semiconductor material is above a top surface of the fin; and forming a source/drain contact on the source/drain region.

Abstract: Embodiments with present disclosure provides a gate-all-around FET device including a patterned or lowered bottom dielectric layer. The bottom dielectric layer prevents the subsequently formed epitaxial source/drain region from volume loss and induces compressive strain in the channel region to prevent strain loss and channel resistance degradation.

Abstract: In an embodiment, a device includes a substrate, a first semiconductor layer that extends from the substrate, and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer includes silicon and the second semiconductor layer includes silicon germanium, with edge portions of the second semiconductor layer having a first germanium concentration, a center portion of the second semiconductor layer having a second germanium concentration, and the second germanium concentration being less than the first germanium concentration. The device also includes a gate stack on the second semiconductor layer, lightly doped source/drain regions in the second semiconductor layer, and source and drain regions extending into the lightly doped source/drain regions.

Abstract: A method includes forming a fin over a substrate, forming an isolation region adjacent the fin, forming a dummy gate structure over the fin, and recessing the fin adjacent the dummy gate structure to form a first recess using a first etching process. The method also includes performing a plasma clean process on the first recess, the plasma clean process including placing the substrate on a holder disposed in a process chamber, heating the holder to a process temperature between 300° C. and 1000° C., introducing hydrogen gas into a plasma generation chamber connected to the process chamber, igniting a plasma within the plasma generation chamber to form hydrogen radicals, and exposing surfaces of the recess to the hydrogen radicals. The method also includes epitaxially growing a source/drain region in the first recess.

Abstract: The present disclosure provides a semiconductor device and a method of forming the same. A method according one embodiment of the present disclosure include forming a stack over a substrate, forming a fin-shape structure from patterning the stack and the substrate, recessing the fin-shape structure to form a source/drain trench, depositing a dielectric film in the source/drain trench with a top surface below a top surface of the substrate in the fin-shape structure, and forming an epitaxial feature over the dielectric film. A bottom surface of the epitaxial feature is below the top surface of the substrate in the fin-shape structure.

Abstract: A connector usable to fix a child seat to a vehicle is provided. The connector includes a bottom element configured to receive bottom element support members connectable to the vehicle, a top element positioned above the bottom element and configured to receive top element support members configured to receive the child seat, and a locking arrangement positioned between the bottom element and the top element, wherein the locking arrangement is configured to lock the top element to the bottom element and comprises a locking element configured to release and subsequently lock the top element such that the top element can rotate to an alternate orientation.

Abstract: The present invention provides an information security incident diagnosis system for assisting in detecting whether a target network system has been hacked. First, a plurality of activities records of one or more computing devices in a target network system are collected. Then, a discrete space metric tree is generated according to the plurality of activities records, and a clustering operation is performed on the discrete space metric tree to generate one or more event clusters associated with one or more suspicious event categories. Each event cluster may form a guide tree corresponding to the event cluster through single linkage clustering analysis to indicate a merging order from high to low similarity. The merging order is used for recursively performing a graph generating operation to convert a plurality of activities records corresponding to the one or more event clusters into a hierarchical directed acyclic graph (HDAG).

Abstract: A safety driving detection and auxiliary system comprises a physiological sensing module, an alcohol detection module, a warning device and a computing device. The physiological sensing module is configured to obtain at least one piece of physiological information of a driver. The alcohol detection module is configured to detect an alcohol concentration of the driver. The warning device is configured to generate a warning signal. The computing device is connected to the physiological sensing module, the alcohol detection module and the warning device, and is configured to determine whether to actuate a vehicle controller according to the alcohol concentration of the driver, obtain a vehicle speed information from the vehicle controller, and actuate the warning device or/and control the vehicle controller at least according to the at least one piece of physiological information and the vehicle speed information.

Abstract: A wireless vehicle control device, disposed on a vehicle, includes a first communication unit, at least one second communication unit and a central management unit. The first communication unit is configured to detect a first communication signal of a portable electronic device. The at least one second communication unit is configured to detect a second communication signal of the portable electronic device, wherein a communication range of the at least one second communication unit is smaller than that of the first communication unit. The central management unit is configured to activate the at least one second communication unit to perform detection when determining that the first communication unit is paired with the portable electronic device according to the first communication signal, and control at least one vehicle lock according to the first communication signal when a distance corresponding to the second communication signal is not greater than a default distance.

Abstract: A method includes forming a fin protruding from a substrate; forming an isolation region surrounding the fin; forming a gate structure extending over the fin and the isolation region; etching the fin adjacent the gate structure to form a recess; forming a source/drain region in the recess, including performing a first epitaxial process to grow a first semiconductor material in the recess, wherein the first epitaxial process preferentially forms facet planes of a first crystalline orientation; and performing a second epitaxial process to grow a second semiconductor material on the first semiconductor material, wherein the second epitaxial process preferentially forms facet planes of a second crystalline orientation, wherein a top surface of the second semiconductor material is above a top surface of the fin; and forming a source/drain contact on the source/drain region.

Abstract: The present invention provides an event visualization device configured to generate one or more directed acyclic graphs (DAGs) that can be used as a basis for diagnosing whether a target network system has been hacked according to a plurality of activities records. The plurality of activities records pertain to an event cluster associated with a suspicious event category. The event visualization device performs a graph generating operation on the plurality of activities records in a recursive manner to generate a hierarchical directed acyclic graph (HDAG). The graph generating operation includes: interpreting an activities record into a target DAG, and performing a hierarchical partial order alignment (HPOA) operation on the target DAG and a reference DAG to obtain a merging condition of each node; and merging the target DAG and the reference DAG into the HDAG according to the merging condition.

Abstract: The present invention provides a log classification system configured to perform a hierarchical similarity analysis operation according to a plurality of activities records to generate a discrete space metric tree, and perform a clustering operation on the discrete space metric tree to generate one or more event clusters associated with one or more suspicious event categories. The log classification system includes an output device configured to output the one or more event clusters to an information security incident diagnosis system, and allow the information security incident diagnosis system to calculate similar feature information and differential feature information of a plurality of activities records in the one or more event clusters as auxiliary information for diagnosing whether there are intrusions or abnormalities in a target network system.

Abstract: A method of performing shear wave elastography in tissue includes transmitting successively a series of ultrasound push pulses in the tissue in a region of interest (ROI) using a single array transducer. The acoustic intensities of the push pulses are sinusoidally modulated with a modulation frequency, Each push pulse generates an acoustic radiation force that pushes the tissue and creates an individual shear wave propagating through the tissue. The amplitudes of the shear waves, and therefore, the displacements produced by the push pulses, are positively proportionally to the intensities of the push pulses. The successively created individual shear waves with different amplitudes sum together to form a continuous, harmonic summed shear wave with a single frequency the same as the modulation frequency of the push pulses.

Abstract: A method for predicting an attacked path on enterprise networks includes: obtaining a plurality of accounts, a plurality of machines and network resource data, where the plurality of machines include at least one attacked target; calculating, according to the network resource data, a plurality of evaluated values of executing access on other machines of each account logging in at least one machine; and presenting an attacked path where a machine at least one account logs in accesses the attacked target directly, or indirectly by connecting to other machines, and the machine the at least one account logs in points to the attacked target directly, or indirectly by connecting to other machines.

Abstract: A device includes a fin structure, a gate structure, a first source/drain epitaxial structure and, a second source/drain epitaxial structure. The fin structure over a substrate and includes a bottom portion protruding from the substrate and a top portion over the bottom portion. An interface between the bottom portion and the top portion comprises oxygen and has an oxygen concentration lower than about 1.E+19 atoms/cm3. The gate structure covers the fin structure. The first source/drain epitaxial structure and the second source/drain epitaxial structure are over the top portion of the fin structure and on opposite sides of the gate structure.

Abstract: In an embodiment, a device includes a substrate, a first semiconductor layer that extends from the substrate, and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer includes silicon and the second semiconductor layer includes silicon germanium, with edge portions of the second semiconductor layer having a first germanium concentration, a center portion of the second semiconductor layer having a second germanium concentration, and the second germanium concentration being less than the first germanium concentration. The device also includes a gate stack on the second semiconductor layer, lightly doped source/drain regions in the second semiconductor layer, and source and drain regions extending into the lightly doped source/drain regions.

Abstract: A method includes forming an implanted region in a substrate. The implanted region is adjacent to a top surface of the substrate. A clean treatment is performed on the top surface of the implanted region. The top surface of the implanted region is baked after the clean treatment. An epitaxial layer is formed on the top surface of the substrate. The epitaxial layer is patterned to form a fin.