Patents by Inventor Chi Chan Tseng

Chi Chan Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
    Patent number: 7378744
    Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
    Type: Grant
    Filed: May 22, 2006
    Date of Patent: May 27, 2008
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jian-Shin Tsai, Yu-Hua Chou, Tzo-Hung Luo, Chi-Chan Tseng, Wei Zhang, Jong-Chen Yang
  • Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
    Patent number: 7358612
    Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
    Type: Grant
    Filed: May 22, 2006
    Date of Patent: April 15, 2008
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Jian-Shin Tsai, Yu-Hua Chou, Tzo-Hung Luo, Chi-Chan Tseng, Wei Zhang, Jong-Chen Yang
  • Plasma Treatment at Film Layer to Reduce Sheet Resistance and to Improve Via Contact Resistance
    Publication number: 20070010080
    Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
    Type: Application
    Filed: May 22, 2006
    Publication date: January 11, 2007
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jian-Shin Tsai, Yu-Hua Chou, Tzo-Hung Luo, Chi-Chan Tseng, Wei Zhang, Jong-Chen Yang
  • Plasma Treatment at Film Layer to Reduce Sheet Resistance and to Improve Via Contact Resistance
    Publication number: 20060216916
    Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
    Type: Application
    Filed: May 22, 2006
    Publication date: September 28, 2006
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jian-Shin Tsai, Yu-Hua Chou, Tzo-Hung Luo, Chi-Chan Tseng, Wei Zhang, Jong-Chen Yang
  • Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
    Patent number: 7067409
    Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
    Type: Grant
    Filed: May 10, 2004
    Date of Patent: June 27, 2006
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jian Shin Tsai, Yu Hua Chou, Tzo Hung Luo, Chi Chan Tseng, Wei Zhang, Jong Chen Yang
  • Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
    Publication number: 20050250320
    Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
    Type: Application
    Filed: May 10, 2004
    Publication date: November 10, 2005
    Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventors: Jian Tsai, Yu-Hua Chou, Tzo-Hung Luo, Chi-Chan Tseng, Wei Zhang, Jong-Chen Yang