Patents by Inventor Chi Cheh Yeh

Chi Cheh Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8334570
    Abstract: A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: December 18, 2012
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jeff J. Xu, Clement H. Wann, Chi Cheh Yeh, Chi-Sheng Chang