Abstract: Methods of forming conductive contacts are described. According to one implementation, the method includes forming a transistor gate structure over a substrate. The gate structure includes a conductive silicide covered by insulative material. A dielectric layer is formed over the substrate and the gate structure. A contact opening is etched into the dielectric layer adjacent the gate structure. After the etching, the substrate is exposed to oxidizing conditions effective to oxidize any conductive silicide within the contact opening which was exposed during the contact opening etch. After the oxidizing, conductive material is formed within the contact opening. According to another embodiment, after the etching, it is determined whether conductive silicide of the gate structure was exposed during the etching. The substrate is then exposed to oxidizing conditions only if conductive silicide of the gate structure was exposed during the etching.

Abstract: Methods of forming conductive contacts are described. According to one implementation, the method includes forming a transistor gate structure over a substrate. The gate structure includes a conductive silicide covered by insulative material. A dielectric layer is formed over the substrate and the gate structure. A contact opening is etched into the dielectric layer adjacent the gate structure. After the etching, the substrate is exposed to oxidizing conditions effective to oxidize any conductive silicide within the contact opening which was exposed during the contact opening etch. After the oxidizing, conductive material is formed within the contact opening. According to another embodiment, after the etching, it is determined whether conductive silicide of the gate structure was exposed during the etching. The substrate is then exposed to oxidizing conditions only if conductive silicide of the gate structure was exposed during the etching.

Abstract: This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The method may comprise providing a substrate comprising a microelectronic circuit and a porous silica layer, the porous silica layer having an average pore diameter between 2 and 80 nm; and heating the substrate to one or more temperatures between 100 and 490 degrees C. in a substantially halogen-free atmosphere, whereby one or more dielectric properties of the porous dielectric are improved. In some embodiments, the atmosphere comprises a phenyl-containing atmosphere, such as hexaphenyldisilazane.

Abstract: This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The process may include baking the structure in a reducing atmosphere, preferably a forming gas, to dehydroxylate the pore surfaces. The process may include baking the structure in a halogen-containing atmosphere to bond halogens to the pore surfaces. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample.

Abstract: This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for sample, between patterned conductors 24. The process may include baking the structure in a reducing atmosphere, preferably a forming gas, to dehydroxylate the pore surfaces. The process may include baking the structure in a halogen-containing atmosphere to bond halogens to the pore surfaces. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample.

Abstract: This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The process may include baking the structure in a reducing atmosphere, preferably a forming gas, to dehydroxylate the pore surfaces. The process may include baking the structure in a halogen-containing atmosphere to bond halogens to the pore surfaces. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample.