Patents by Inventor Chi Cheng Pan

Chi Cheng Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240112959
    Abstract: A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.
    Type: Application
    Filed: December 1, 2023
    Publication date: April 4, 2024
    Inventors: Kuan-Ting PAN, Zhi-Chang LIN, Yi-Ruei JHAN, Chi-Hao WANG, Huan-Chieh SU, Shi Ning JU, Kuo-Cheng CHIANG
  • Publication number: 20240071888
    Abstract: A package structure including a redistribution circuit structure, a wiring substrate, first conductive terminals, an insulating encapsulation, and a semiconductor device is provided. The redistribution circuit structure includes stacked dielectric layers, redistribution wirings and first conductive pads. The first conductive pads are disposed on a surface of an outermost dielectric layer among the stacked dielectric layers, the first conductive pads are electrically connected to outermost redistribution pads among the redistribution wirings by via openings of the outermost dielectric layer, and a first lateral dimension of the via openings is greater than a half of a second lateral dimension of the outermost redistribution pads. The wiring substrate includes second conductive pads. The first conductive terminals are disposed between the first conductive pads and the second conductive pads. The insulating encapsulation is disposed on the surface of the redistribution circuit structure.
    Type: Application
    Filed: August 28, 2022
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Chang Lin, Yen-Fu Su, Chin-Liang Chen, Wei-Yu Chen, Hsin-Yu Pan, Yu-Min Liang, Hao-Cheng Hou, Chi-Yang Yu
  • Patent number: 7012334
    Abstract: A method for manufacturing a semiconductor chip with bumps comprises providing a semiconductor chip, which defines an active surface and a back surface and has a plurality of pads disposed on the active surface, and a plurality of preformed solder balls. A passivation is disposed on the active surface of the semiconductor chip with the pads exposed. A plurality of UBMs (Under Bump Metallurgy) are disposed on the pads and define a plurality of bump pads. The diameter of the bump pads is about 100% to about 130% of the diameter of the preformed solder balls. The preformed solder balls are placed on the bump pads and then reflowed to form a plurality of bumps on the semiconductor chip.
    Type: Grant
    Filed: July 29, 2004
    Date of Patent: March 14, 2006
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Chih Chiang Liu, Chi Cheng Pan, Kuo Lung Wang, Che Hsiung Chen
  • Publication number: 20050035451
    Abstract: A method for manufacturing a semiconductor chip with bumps comprises providing a semiconductor chip, which defines an active surface and a back surface and has a plurality of pads disposed on the active surface, and a plurality of preformed solder balls. A passivation is disposed on the active surface of the semiconductor chip with the pads exposed. A plurality of UBMs (Under Bump Metallurgy) are disposed on the pads and define a plurality of bump pads. The diameter of the bump pads is about 100% to about 130% of the diameter of the preformed solder balls. The preformed solder balls are placed on the bump pads and then reflowed to form a plurality of bumps on the semiconductor chip.
    Type: Application
    Filed: July 29, 2004
    Publication date: February 17, 2005
    Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.
    Inventors: Chih Chiang Liu, Chi Cheng Pan, Kuo Lung Wang, Che Hsiung Chen
  • Patent number: 6768332
    Abstract: A semiconductor wafer includes a plurality of areas and an array of dice disposed within each of the areas. The feature of the present invention is that at least two fiducial marks are disposed in each of the areas. The present invention further provides a method of testing a sawed semiconductor wafer.
    Type: Grant
    Filed: March 12, 2003
    Date of Patent: July 27, 2004
    Assignee: Advanced Semiconductor Engineering Inc.
    Inventors: Yueh Lung Lin, Ho Ming Tong, Yao Hsin Feng, Su Tao, Chi Cheng Pan, Kuo Pin Yang, Sung Ching Hung
  • Publication number: 20040032009
    Abstract: A semiconductor wafer device is provided in this invention. The semiconductor wafer device includes a plurality of chips, circuits, cutting streets, and a polymer layer. The cutting streets include a plurality of longitudinal cutting streets and transverse cutting streets, which are formed between the neighboring chips, and the polymer layer is formed on the cutting streets. In addition, this invention also provides a semiconductor wafer device with a plurality of bumps formed thereon and the bumps are encompassed with a polymer layer.
    Type: Application
    Filed: August 11, 2003
    Publication date: February 19, 2004
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Yao-Shin Fang, Chi-Cheng Pan, Kuo-Pin Yang, Su Tao, Sung-Ching Hung, Chun-Chi Lee, Ho-Ming Tong
  • Publication number: 20040021479
    Abstract: A semiconductor wafer includes a plurality of areas and an array of dice disposed within each of the areas. The feature of the present invention is that at least two fiducial marks are disposed in each of the areas. The present invention further provides a method of testing a sawed semiconductor wafer.
    Type: Application
    Filed: March 12, 2003
    Publication date: February 5, 2004
    Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Yueh Lung Lin, Ho Ming Tong, Yao Hsin Feng, Su Tao, Chi Cheng Pan, Kuo Pin Yang, Sung Ching Hung