Abstract: Device and method for scanning an object outline image are provided. The scanning device includes a light source, an optical sensor and a processor. The scanning method includes: providing a polarized projection light beam; projecting the polarized projection light beam to an object, and correspondingly reflecting a polarized reflection light beam by the object according to the polarized projection light beam; capturing an image of the polarized reflection light beam; calculating polarization state of target according to the polarized projection light beam and the polarized reflection light beam, the polarization state of target having a plane angle from normal projection and a corresponding point position; and restoring an outline image of the object according to the polarization state of target.

Abstract: Device and method for scanning an object outline image are provided. The scanning device includes a light source, an optical sensor and a processor. The scanning method includes: providing a polarized projection light beam; projecting the polarized projection light beam to an object, and correspondingly reflecting a polarized reflection light beam by the object according to the polarized projection light beam; capturing an image of the polarized reflection light beam; calculating polarization state of target according to the polarized projection light beam and the polarized reflection light beam, the polarization state of target having a plane angle from normal projection and a corresponding point position; and restoring an outline image of the object according to the polarization state of target.

Abstract: A liquefied natural gas (LNG) receiving terminal is provided, including an extraction column adapted and configured to separate a C1 component from other components in a LNG stream into a C1 rich stream, one of a gas condenser and a heat exchanger adapted and configured to condense the C1 rich stream into a liquid, and a pump adapted and configured to increase a pressure of the liquid C1 rich stream.

Abstract: A low-emission gas vaporization system includes: a heat exchanger for cooling a medium used in a production process; a heat sink for eliminating heat; a vaporizer for changing liquid natural gas to gaseous natural gas; a cooling fluid supply path for providing cooled fluid to the heat exchanger from the heat sink; a cooling fluid return path for providing heated fluid to the heat sink from the heat exchanger; a heating fluid supply path for providing heated fluid to the vaporizer from the heat exchanger; and a heating fluid return path for providing cooled fluid to the heat exchanger from the vaporizer.

Abstract: A liquefied natural gas (LNG) receiving terminal is provided, including an extraction column adapted and configured to separate a C1 component from other components in a LNG stream into a C1 rich stream, one of a gas condenser and a heat exchanger adapted and configured to condense the C1 rich stream into a liquid, and a pump adapted and configured to increase a pressure of the liquid C1 rich stream.

Abstract: A process has been developed in which high aspect ratio contact holes can be successfully filled, without voids, using a composite metallization layer. After adhesive and barrier layers are deposited, an additional titanium adhesive layer is deposited, for purposes of improving the adhesion of subsequent, overlying metallizations to underlying device structures. A two step aluminum deposition process is then employed, using an initial cold deposition followed by a hot aluminum deposition. The hot aluminum deposition process results in complete filling of the high aspect ratio contact hole, and also allows the formation of a titanium-aluminum intermetallic layer at the interface of the titanium adhesive layer and the initial, cold aluminum deposition layer.

Abstract: Methods for enhancing the effectiveness of barrier layers, needed to prevent interaction between overlying aluminum interconnect metallizations, and underlying silicon device regions, has been developed. One method consists of using dual layers of titanium nitride, on titanium disilicide. The first titanium nitride layer is obtained via rapid thermal annealing of an underlying titanium layer, in a nitrogen containing ambient, also resulting in the formation of the underlying titanium disilicide layer. The second titanium nitride layer is deposited using reactive sputtering. A second method, used to create an enhanced barrier layer, is to reactively sputter titanium nitride, directly on an underlying titanium layer. Rapid thermal annealing, in an ammonia and oxygen ambient, results in an oxygen containing titanium nitride barrier layer. The rapid thermal anneal cycle also converts the underlying titanium layer, to the desired titanium disilicide layer.

Abstract: A method for fabricating a via that uses a hard etching mask for etching the via. A photoresist layer used to pattern the hard etching mask is removed before starting the via etching. The hard etching mask includes a TiN etching mask, a silicon nitride etching mask, and a oxide/TiN etching mask. For each different etching mass, the TiN etching mask is not necessarily removed after etching; the silicon nitride etching mask is removed after etching; the oxide layer in the oxide/TiN etching mask is sacrificial layer.

Abstract: A T-shape vortex shedder comprises a bluff body having a width W between upper and lower ends thereof and an extended plate having a length L in the fluid flow direction which is perpendicular to the bluff body. The bluff body and the extended plate form a T-shape vortex shedder with a T-shape cross section. When this T-shape vortex shedder is placed in a fluid motion within a circular pipe, the bluff body is located upstream of the fluid flow, and the extended plate is located downstream of the fluid flow, such that vortex shedding is produced at the upper and lower ends of the bluff body. The T-shape vortex shedder is characterized in that the L/W ratio is approximately 1.56.about.2.0, and the fluid flow produces steady vortex shedding when the Reynolds number of the fluid flow is approximately 2.4.times.10.sup.3 .about.3.2.times.10.sup.4.

Abstract: Method for treating waste slurries containing solid impurities, e.g. in the form of metal chlorides, and silicon tetrachloride and trichlorosilane by evaporation and separation techniques to recover more of the silicon tetrachloride and trichlorosilane.