Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: A method includes bonding a first device die and a second device die to an interconnect die. The interconnect die includes a first portion over and bonded to the first device die, and a second portion over and bonded to the second device die. The interconnect die electrically connects the first device die to the second device die. The method further includes encapsulating the interconnect die in an encapsulating material, and forming a plurality of redistribution lines over the interconnect die.

Abstract: A device includes a first package connected to an interconnect substrate, wherein the interconnect substrate includes conductive routing; and a second package connected to the interconnect substrate, wherein the second package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler and to a photodetector; a via extending through the substrate; an interconnect structure over the photonic layer, wherein the interconnect structure is connected to the photodetector and to the via; and an electronic die bonded to the interconnect structure, wherein the electronic die is connected to the interconnect structure.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: A programmable non-overlap clock generator is disclosed. This clock generator includes a primary clock signal input terminal for providing a primary clock signal, and a selection signal input terminal for providing at least one selection signal. The present invention also includes a first logic gate, whose first input terminal is coupled to receive an inverted signal of the primary clock signal. Further, the first input terminal of a second logic gate is coupled to receive the primary clock signal. A first programmable delay means, connected between an output of the first logic gate and the second input terminal of the second logic gate, is used to delay an output signal from the first logic gate a predetermined amount of time according to the selection signal.

Abstract: A structure and method for forming multiplication of a b-bit multiplicand X and a b-bit multiplier Y to generate a product P is disclosed. The present invention includes cells C.sub.mn configured in a b.times.b array, and pieces of means for generating partial product X.sub.mn, wherein outputs of the partial product generating means are connected to first inputs of the cells respectively. The second inputs of the cells C.sub.mn, where m=0, 1, 2, . . . , b-2, and n=1, 2, . . . , b-1, are connected to first outputs of the cells C.sub.m+1, n-1 respectively, and the second inputs of the cells C.sub.b-1, n, where n=1, 2, . . . , b-1, are connected to second outputs of the cells C.sub.n-1, b-1 respectively. Further, the third inputs of the cells C.sub.mn, where m=0, 1, 2, . . . , b-1, and n=2, 3, . . . , b-1, are connected to the second outputs of the cells C.sub.m, n-1. Therefore, a portion of the product P.sub.f, where f=0, 1, . . . , b-1, comes from the first outputs of the cells C.sub.

Abstract: A self-setup non-overlap clock generator is disclosed. This clock generator includes a primary clock signal input terminal for providing a primary clock signal, and a selection signal input terminal for providing at least one selection signal. The present invention also includes a first logic gate having a first input terminal coupled to receive an inverted signal of the primary clock signal. Further, a second logic gate is provided, having a first input terminal coupled to receive the primary clock signal. A first programmable delay portion is used to delay an output signal from the first logic gate an amount of time according to the selection signal, and a second programmable delay portion is used to delay an output signal from the second logic gate a predetermined amount of time according to the selection signal. Therefore, a first clock signal is generated from the output of the first logic gate, and a second clock signal is generated from the output of the second logic gate.