Abstract: Provided is a pharmaceutical composition for treating melanoma, including a benzenesulfonamide derivative and a pharmaceutically acceptable carrier thereof. Also provided is a method for treating melanoma by administering the composition to a subject in need thereof. Further provided is a use of the pharmaceutical composition in the manufacture of a medicament for treating melanoma.

Abstract: A first source/drain structure is disposed over a substrate. A second source/drain structure is disposed over the substrate. An isolation structure is disposed between the first source/drain structure and the second source/drain structure. The first source/drain structure and a first sidewall of the isolation structure form a first interface that is substantially linear. The second source/drain structure and a second sidewall of the isolation structure form a second interface that is substantially linear. A first source/drain contact surrounds the first source/drain structure in multiple directions. A second source/drain contact surrounds the second source/drain structure in multiple directions. The isolation structure is disposed between the first source/drain contact and the second source/drain contact.

Abstract: A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.

Abstract: A first source/drain structure is disposed over a substrate. A second source/drain structure is disposed over the substrate. An isolation structure is disposed between the first source/drain structure and the second source/drain structure. The first source/drain structure and a first sidewall of the isolation structure form a first interface that is substantially linear. The second source/drain structure and a second sidewall of the isolation structure form a second interface that is substantially linear. A first source/drain contact surrounds the first source/drain structure in multiple directions. A second source/drain contact surrounds the second source/drain structure in multiple directions. The isolation structure is disposed between the first source/drain contact and the second source/drain contact.

Abstract: Provided is a composition for reducing fat in the body of a subject, including a benzenesulfonamide derivative and a pharmaceutically or cosmetically acceptable carrier thereof. Also provided is a method for fat ablation or lipolysis by administering the composition to the subject in need thereof. Further provided is a method for preventing or treating a disease or condition related to fat accumulation by administering the composition to the subject in need thereof.

Abstract: A light-emitting device, includes: a substrate, including a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; and a semiconductor stack on the main surface, including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area surrounding the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon.

Abstract: A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.

Abstract: A resin composition is provided. The resin composition comprises: (A) a compound having a structure of formula (I), wherein R1 is an organic group; and (B) a vinyl-containing elastomer, wherein the weight ratio of the compound having the structure of formula (I) to the vinyl-containing elastomer is 20:1 to 1:1.

Abstract: An electric nail gun includes a nail-striking subunit that is adapted to strike a nail, a lifting wheel that is movable to become engageable and not engageable with the nail-striking subunit, a driving member that is rotatable by a motor, and a transmission shaft that is movably connected between the driving member and the lifting wheel, and that is convertible between a first position, where the lifting wheel is engageable with the nail-striking subunit such that rotation of the driving member results in movement of the nail-striking subunit, and a second position, where the lifting wheel is not engageable with the nail-striking subunit such that rotation of the driving member does not result in movement of the nail-striking subunit.

Abstract: A memory data management method includes the following steps reading a plurality of data of a plurality of memory cells of a memory block; determining whether error bits of the data exceed an error correction code (ECC) threshold; if the error bits of the data exceed the ECC threshold, a programming process being executed to increase a first threshold voltage of a first state data of the data for exceeding a first threshold, to increase a second threshold voltage of a second state data of the data for exceeding a second threshold, and to increase a third threshold voltage of a third state data of the data for exceeding a third threshold.

Abstract: An optical encoding device includes a code disc, an optical signal generator, (K+1) optical sensors and an encoding circuit. The code disk has K gratings arranged in a row. The total width of the optical sensors is equal to the total width W of the gratings. The optical sensor receives the optical signal through the code disk. Each optical sensor converts the optical signal into a voltage signal and outputs the voltage signal. The encoding circuit receives and normalizes the voltage signals to generate (K+1) voltage values. During a period in which the code disk rotates by a distance of 2W/K, the encoding circuit compares the voltage values with a preset value to generate at least two binary codes. When K is odd, the preset value is 0.5, and when K is even, the preset value is 0.55. The present invention can increase an absolute row resolution of the code disc.

Abstract: A memory data management method includes the following steps: reading a plurality of data of a plurality of memory cells of a memory block; determining whether error bits of the data exceed an error correction code (ECC) threshold; if the error bits of the data exceed the ECC threshold, a programming process being executed to enhance a first state data of the data for exceeding a first threshold, to enhance a second state data of the data for exceeding a second threshold, and to enhance a third state data of the data for exceeding a third threshold.

Abstract: A method for forming a package structure includes forming an under bump metallization (UBM) layer over a metal pad and forming a photoresist layer over the UBM layer. The method further includes patterning the photoresist layer to form an opening in the photoresist layer. The method also includes forming a first bump structure over the first portion of the UBM layer. The first bump structure includes a first barrier layer over a first pillar layer. The method includes placing a second bump structure over the first bump structure. The second bump structure includes a second barrier layer over a second pillar layer. The method further includes reflowing the first bump structure and the second bump structure to form a solder joint between a first inter intermetallic compound (IMC) and a second IMC.

Abstract: A semiconductor structure can include a resistor on a substrate formed simultaneously with other devices, such as transistors. A diffusion barrier layer formed on a substrate is patterned to form a resistor and barrier layers under a transistor gate. A filler material, a first connector, and a second connector are formed on the resistor at the same manner and time as the gate of the transistor. The filler material is removed to form a resistor on a substrate.

Abstract: The present disclosure relates to a benzenesulfonamide derivative which is useful to modulate lipid raft integrity of cancer cells and the use of the benzenesulfonamide derivative in prevention or treatment of diseases or conditions which can be ameliorated by change of the lipid raft integrity in a subject.

Abstract: A process for the production of benzene and ethylene from an alkane-containing gas stream. The alkane-containing gas stream may be contacted, in a reaction zone of a reactor under alkane aromatization conditions, with an aromatization catalyst including any combination of fresh, spent, and regenerated catalyst to produce an outlet stream including (i) spent catalyst and (ii) a product mixture including benzene and ethylene. The spent catalyst may be regenerated in a regeneration zone under regeneration conditions to produce the regenerated catalyst. A selected amount of fresh catalyst may be added to the regeneration zone to produce the mixture of fresh catalyst and regenerated catalyst, which may be recycled to the reaction zone. A ratio of benzene to ethylene in the product mixture may be controlled by modifying the alkane aromatization conditions, the regeneration conditions, and/or the selected amount of fresh catalyst added to the regeneration zone.

Abstract: The present disclosure provides for a cryopreservation composition comprising a permeating cryoprotectant, a saccharide and a macromolecule. The cryopreservation composition has a low toxicity to cells and tissues, and promotes survival and retention of viability of the biological material during cryopreservation.

Abstract: A package structure is provided. The package structure includes a first bump structure formed over a substrate, a solder joint formed over the first bump structure and a second bump structure formed over the solder joint. The first bump structure includes a first pillar layer formed over the substrate and a first barrier layer formed over the first pillar layer. The first barrier layer has a first protruding portion which extends away from a sidewall surface of the first pillar layer, and a distance between the sidewall surface of the first pillar layer and a sidewall surface of the first barrier layer is in a range from about 0.5 ?m to about 3 ?m. The second bump structure includes a second barrier layer formed over the solder joint and a second pillar layer formed over the second barrier layer, wherein the second barrier layer has a second protruding portion which extends away from a sidewall surface of the second pillar layer.

Abstract: A gas detecting device includes a casing, an optical mechanism, a gas transporting actuator, a laser module, a particle detector and an external sensing module. The casing includes a chamber, an inlet, an outlet and a communication channel. The optical mechanism is disposed in the chamber. The optical mechanism includes an airflow channel and a light-beam channel. The airflow channel is in fluid communication with the at least one inlet and the outlet. The light-beam channel is in communication with the airflow channel. The gas transporting actuator is disposed on the optical mechanism. The laser module is disposed in the optical mechanism for emitting a light beam to the airflow channel. The particle detector detects sizes and a concentration of the suspended particles in the air. The external sensing module is installed in the communication channel to measure the air.

Abstract: A light-emitting device, includes: a substrate, including a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; and a semiconductor stack on the main surface, including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area surrounding the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon.